Improvement of the quality factor of RF integrated inductors by layout optimization

A systematic method to improve the quality (Q) factor of RF integrated inductors is presented in this paper. The proposed method is based on the layout optimization to minimize the series resistance of the inductor coil, taking into account both ohmic losses, due to conduction currents, and magnetically induced losses, due to eddy currents. The technique is particularly useful when applied to inductors in which the fabrication process includes integration substrate removal. However, it is also applicable to inductors on low-loss substrates. The method optimizes the width of the metal strip for each turn of the inductor coil, leading to a variable strip-width layout. The optimization procedure has been successfully applied to the design of square spiral inductors in a silicon-based multichip-module technology, complemented with silicon micromachining postprocessing. The obtained experimental results corroborate the validity of the proposed method. A Q factor of about 17 have been obtained for a 35-nH inductor at 1.5 GHz, with Q values higher than 40 predicted for a 20-nH inductor working at 3.5 GHz. The latter is up to a 60% better than the best results for a single strip-width inductor working at the same frequency

Residual Stress Measurement on a MEMS Structure With High-Spatial Resolution

A new approach to the local measurement of residual stress in microstructures is described in this paper. The presented technique takes advantage of the combined milling-imaging features of a focused ion beam (FIB) equipment to scale down the widely known hole drilling method. This method consists of drilling a small hole in a solid with inherent residual stresses and measuring the strains/displacements caused by the local stress release, that takes place around the hole. In the presented case, the displacements caused by the milling are determined by applying digital image correlation (DIC) techniques to high resolution micrographs taken before and after the milling process. The residual stress value is then obtained by fitting the measured displacements to the analytical solution of the displacement fields. The feasibility of this approach has been demonstrated on a micromachined silicon nitride membrane showing that this method has high potential for applications in the field of mechanical characterization of micro/nanoelectromechanical systems

Micro light plates for low-power photoactivated (gas) sensors

We report a miniaturized device integrating a photoactive material with a highly efficient Light Emitting Diode light source. This so-called micro light plate configuration allows for maximizing the irradiance impinging on the photoactive material, with a minimum power consumption, excellent uniformity, and accurate control of the illumination. We demonstrate these advantages with an example application: photoactivated gas sensors with a power consumption as low as 30 μW (this is 1000 times lower than the best figures reported to date). The letter also presents a quantitative model and a set of design rules to implement it in further integrated applications

A parts per billion (ppb) sensor for NO2 with microwatt (μW) power requirements based on micro light plates

A film of gas sensitive ZnO nanoparticles has been coupled with a low-power micro light plate (μLP) to achieve a NO2-parts-per-billion conductometric gas sensor operating at room temperature. In this μLP configuration, an InGaN-based LED (emitting at 455 nm) is integrated at a few hundred nanometers distance from the sensor material, leading to sensor photoactivation with well controlled, uniform, and high irradiance conditions, and very low electrical power needs. The response curves to different NO2 concentrations as a function of the irradiance displayed a bell-like shape. Responses of 20% to 25 ppb of NO2 were already observed at irradiances of 5 mWatts·cm-2 (applying an electrical power as low as 30 μW). In the optimum illumination conditions (around 60 mWatts·cm-2, or 200 μW of electric power), responses of 94% to 25 ppb were achieved, corresponding to a lower detection limit of 1 ppb of NO2. Higher irradiance values worsened the sensor response in the parts-per-billion range of NO2 concentrations. The responses to other gases such as NH3, CO, and CH4 were much smaller, showing a certain selectivity toward NO2. The effects of humidity on the sensor response are also discussed

Site-selectively grown SnO2 NWs networks on micromembranes for efficient ammonia sensing in humid conditions

SnO2 NWs networks on heated micromembranes have been characterized as ammonia sensors. The approach allows achieving reproducible growth and stable and long-lasting ammonia sensors with site-specific grown SnO2 NWs. The devices have been tested both in dry and humid conditions showing response time down to two minutes. Sensors have been tested up to 1 month, only presenting variation of the base resistance with full retention of the response towards the gaseous analytes. Different concurrent sensing mechanisms have been identified relating the determined sensing kinetics with previous theoretical calculations. Specifically, oxygen dissociation seems to play a key role in the overall ammonia sensing sequence. In humid conditions, moisture reduces the response to ammonia but also lowers the activation energy of the reaction process

Locally grown SnO2 NWs as low power ammonia sensor

Localized growth of SnO2 nanowires on top of CMOS compatible micromembranes that incorporate a buried heater and prepatterned interdigitated electrodes has been achieved that presents the advantage that it allows to easily and directly integrate the advantageous properties of quasi-one dimensional structures in an advanced electronic device by a Vapor Liquid Solid (VLS) mechanism. A NWs based sensor of this type is characterized as a low power gas sensor towards NH3 at different temperatures. Stable and reproducible response is obtained, that allows detecting concentrations below the time-weighted average exposure limit for 8 h

A reusable smart interface for gas sensor resistance measurement

The advances of the semiconductor industry enable microelectromechanical systems sensors, signal conditioning logic and network access to be integrated into a smart sensor node. In this framework, a mixed-mode interface circuit for monolithically integrated gas sensor arrays was developed with high-level design techniques. This interface system includes analog electronics for inspection of up to four sensor arrays and digital logic for smart control and data communication. Although different design methodologies were used in the conception of the complete circuit, high-level synthesis tools and methodologies were crucial in speeding up the whole design cycle, enhancing reusability for future applications and producing a flexible and robust component

Application of nickel electroless plating to the fabrication of low-cost backside contact ISFETs

In this work an alternative, very simple, high-yield and low-cost technology for the fabrication of backside contacts ISFET sensors is presented. This new technological approach is based on the use of a nickel electroless plating technique for the selective metallization of the silicon electrical contacts. The need of any photolithographic step after the silicon anisotropic etch is avoided in this way and, therefore, the yield and the reliability of the whole fabrication process remains unaffected. The fabricated backside contacts ISFET devices has been tested successfully in a prototype of a whole chemical analysis system dedicated to the monitoring of the environment

Improvement of the quality factor of RF integrated inductors by layout optimization

A systematic method to improve the quality (Q) factor of RF integrated inductors is presented in this paper. The proposed method is based on the layout optimization to minimize the series resistance of the inductor coil, taking into account both ohmic losses, due to conduction currents, and magnetically induced losses, due to eddy currents. The technique is particularly useful when applied to inductors in which the fabrication process includes integration substrate removal. However, it is also applicable to inductors on low-loss substrates. The method optimizes the width of the metal strip for each turn of the inductor coil, leading to a variable strip-width layout. The optimization procedure has been successfully applied to the design of square spiral inductors in a silicon-based multichip-module technology, complemented with silicon micromachining postprocessing. The obtained experimental results corroborate the validity of the proposed method. A Q factor of about 17 have been obtained for a 35-nH inductor at 1.5 GHz, with Q values higher than 40 predicted for a 20-nH inductor working at 3.5 GHz. The latter is up to a 60% better than the best results for a single strip-width inductor working at the same frequency