Ultrafast laser welding of silicon

While ultrafast laser welding is an appealing technique for bonding transparent workpieces, it is not applicable for joining silicon samples due to nonlinear propagation effects which dramatically diminishes the possible energy deposition at the interface. We demonstrate that these limitations can be circumvented by local absorption enhancement at the interface thanks to metallic nanolayer deposition. By combining the resulting exalted absorption with filament relocation during ultrafast laser irradiation, silicon samples can be efficiently joined. Shear joining strengths >4 MPa are obtained for 21-nm gold nanolayers without laser-induced alteration of the transmittance. Such remarkable strength values hold promises for applications in microelectronics, optics, and astronomy.Comment: 8 pages, 5 figure

Taming ultrafast laser filaments for optimized semiconductor–metal welding

Ultrafast laser welding is a fast, clean, and contactless technique for joining a broad range of materials. Nevertheless, this technique cannot be applied for bonding semiconductors and metals. By investigating the nonlinear propagation of picosecond laser pulses in silicon, it is elucidated how the evolution of filaments during propagation prevents the energy deposition at the semiconductor–metal interface. While the restrictions imposed by nonlinear propagation effects in semiconductors usually inhibit countless applications, the possibility to perform semiconductor–metal ultrafast laser welding is demonstrated. This technique relies on the determination and the precompensation of the nonlinear focal shift for relocating filaments and thus optimizing the energy deposition at the interface between the materials. The resulting welds show remarkable shear joining strengths (up to 2.2 MPa) compatible with applications in microelectronics. Material analyses shed light on the physical mechanisms involved during the interaction

Study of laser-induced damage on the exit surface of silica components in the nanosecond regime in a multiple wavelengths configuration

Cette thèse porte sur l'endommagement laser à la surface de composants optiques en silice amorphe en régime nanoseconde. Ce phénomène est une modification irréversible du matériau. Dans le régime nanoseconde, l'endommagement laser de la silice est étroitement corrélé à la présence de défauts précurseurs qui sont une conséquence de la synthèse et du polissage des composants. Cette thèse propose des investigations sur l'endommagement laser par plusieurs longueurs d'onde simultanément. Afin de mieux appréhender ce phénomène dans ces conditions d'irradiation, trois études sont conduites. La première porte sur la phase d'amorçage des dommages. Les résultats expérimentaux obtenus dans les cas mono-longueur d'onde permettent de mettre en avant un couplage dans le cas multi-longueurs d'onde. Une comparaison de ces résultats avec un modèle théorique développé au cours de cette thèse permet d'améliorer la compréhension des processus fondamentaux liés à cette phase d'endommagement. Puis, des caractérisations morphologiques post mortem couplées à une métrologie précise des faisceaux laser permettent d'établir la nature ainsi que la chronologie des mécanismes conduisant à la formation des dommages. Le scénario théorique proposé est validé à travers différentes expériences. En dernier lieu, nous étudions la phase de croissance des dommages dans les cas mono et multi-longueurs d'onde. Une fois de plus, cette dernière configuration met en lumière un couplage entre les longueurs d'onde. Nous montrons la nécessité de prendre en compte les caractéristiques spatiales des faisceaux laser lors d'une session de croissance des dommages.In this thesis, laser-induced damage phenomenon on the surface of fused silica components is investigated in the nanosecond regime. This phenomenon consists in an irreversible modification of the material. In the nanosecond regime, laser damage is tightly correlated to the presence of non-detectable precursor defects which are a consequence of the synthesis and the polishing of the components. In this thesis, we investigate laser damage in a multiple wavelengths configuration. In order to better understand this phenomenon in these conditions of irradiation, three studies are conducted. The first one focuses on damage initiation. The results obtained in the single wavelength configurations highlight a coupling in the multiple wavelengths one. A comparison between the experiments and a model developed during this thesis enables us to improve the knowledge of the fundamental processes involved during this damage phase. Then, we show that post mortem characterizations of damage morphology coupled to an accurate metrology allow us to understand both the nature and also the chronology of the physical mechanisms involved during damage formation. The proposed theoretical scenario is confirmed through various experiments. Finally, we study damage growth in both the single and the multiple wavelengths cases. Once again, this last configuration highlights a coupling between the wavelengths. We show the necessity to account for the spatial characteristics of the laser beams during a growth session

Identification of the formation phases of filamentary damage induced by nanosecond laser pulses in bulk fused silica

International audienceEmploying a pump-probe polarization-based two-frame shadowgraphy setup, the formation of filamentary damage induced in bulk fused silica by a nanosecond pulse at 1064 nm is investigated with a picosecond probe. Three different phases are exhibited in the damage experiments. The first phase is the formation of a micrometric plasma channel along the laser direction during the beginning of the pulse likely caused by multi-photon ionization. This channel exhibits growth during similar to 400 ps, and the newly grown plasma is discrete. Then, during the end of the pulse, this channel evolves into a tadpole-like morphology showing an elliptical head upstream the laser flux followed by a thin tail. This observed asymmetry is attributed to shielding effects caused by both the plasma and hot modified silica. Once the damage shows its almost final morphology, a last phase consists in the launch of a pressure wave enlarging it after the laser pulse. The physical mechanisms that might be involved in the formation of plasma channels are discussed. The experimental data are first confronted to the moving breakdown model which overestimates the filamentary damage length. Finally, taking into account the temporal shape of the laser pulses, the coupling between Kerr-induced self-focusing and stimulated Brillouin scattering is discussed to interpret the observations. (C) 2015 AIP Publishing LLC

Experimental investigations on multiple wavelengths laser damage growth in fused silica

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Direct measurement of ambipolar diffusion in bulk silicon by ultrafast infrared imaging of laser-induced microplasmas

International audienceCarrier kinetics in the density range of N = 10(17) - 10(20) cm(-3) is investigated inside the bulk of crystalline silicon. Most conventional experimental techniques used to study carrier mobility are indirect and lack sensitivity because of charging effects and recombination on the surface. An all optical technique is used to overcome these obstacles. By focusing 1.3-mu m femtosecond laser pulses in the volume, we inject an initial free-carrier population by two-photon absorption. Then, we use pump-and-probe infrared microscopy as a tool to obtain simultaneous measurements of the carrier diffusion and recombination dynamics in a microscale region deep inside the material. The rate equation model is used to simulate our experimental results. We report a constant ambipolar diffusion coefficient D-a of 2.5 cm(2) s(-1) and an effective carrier lifetime tau(eff) of 2.5 ns at room temperature. A discussion on our findings at these high-injection levels is presented. (C) 2016 AIP Publishing LLC

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

International audienceLaser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond-pulse trains, and surface-seeded bulk modifications have allowed addressing numerous applications