Introducing a framework to assess newly created questions with Natural Language Processing

Statistical models such as those derived from Item Response Theory (IRT) enable the assessment of students on a specific subject, which can be useful for several purposes (e.g., learning path customization, drop-out prediction). However, the questions have to be assessed as well and, although it is possible to estimate with IRT the characteristics of questions that have already been answered by several students, this technique cannot be used on newly generated questions. In this paper, we propose a framework to train and evaluate models for estimating the difficulty and discrimination of newly created Multiple Choice Questions by extracting meaningful features from the text of the question and of the possible choices. We implement one model using this framework and test it on a real-world dataset provided by CloudAcademy, showing that it outperforms previously proposed models, reducing by 6.7% the RMSE for difficulty estimation and by 10.8% the RMSE for discrimination estimation. We also present the results of an ablation study performed to support our features choice and to show the effects of different characteristics of the questions' text on difficulty and discrimination.Comment: Accepted at the International Conference of Artificial Intelligence in Educatio

Experimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodes

The influence of screw dislocations on the performance of Au/n-GaN Schottky diodes was investigated. The current-voltage (I-V) characteristics of the diodes fabricated on different GaN templates grown by metallorganic chemical vapor deposition on sapphire substrates were studied. It was shown that these dislocations result in the lowering of the barrier height in the localized regions.published_or_final_versio

Spatial distribution of carrier concentration in un-doped GaN film grown on sapphire (Abstract)

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Electric-field distribution in Au–semi-insulating GaAs contact investigated by positron-lifetime technique

Positron-lifetime spectroscopy has been used to investigate the electric-field distribution occurring at the Au–semi-insulating GaAs interface. Positrons implanted from a 22Na source and drifted back to the interface are detected through their characteristic lifetime at interface traps. The relative intensity of this fraction of interface-trapped positrons reveals that the field strength in the depletion region saturates at applied biases above 50 V, an observation that cannot be reconciled with a simple depletion approximation model. The data, are, however, shown to be fully consistent with recent direct electric-field measurements and the theoretical model proposed by McGregor et al. [J. Appl. Phys. 75, 7910 (1994)] of an enhanced EL2+ electron-capture cross section above a critical electric field that causes a dramatic reduction of the depletion region’s net charge density. Two theoretically derived electric field profiles, together with an experimentally based profile, are used to estimate a positron mobility of ∼95±35 cm2 V-1 s-1 under the saturation field. This value is higher than previous experiments would suggest, and reasons for this effect are discussed.published_or_final_versio

A complete characterization of plateaued Boolean functions in terms of their Cayley graphs

In this paper we find a complete characterization of plateaued Boolean functions in terms of the associated Cayley graphs. Precisely, we show that a Boolean function $f$ is $s$-plateaued (of weight $=2^{(n+s-2)/2}$) if and only if the associated Cayley graph is a complete bipartite graph between the support of $f$ and its complement (hence the graph is strongly regular of parameters $e=0,d=2^{(n+s-2)/2}$). Moreover, a Boolean function $f$ is $s$-plateaued (of weight $\neq 2^{(n+s-2)/2}$) if and only if the associated Cayley graph is strongly $3$-walk-regular (and also strongly $\ell$-walk-regular, for all odd $\ell\geq 3$) with some explicitly given parameters.Comment: 7 pages, 1 figure, Proceedings of Africacrypt 201

Current transport property of n-GaN/n-6H-SiC heterojunction: Influence of interface states

Heterostructures of n-GaNn-6H-SiC grown by hydride vapor phase epitaxy (HVPE) and molecular-beam epitaxy (MBE) are characterized with the current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) techniques. Using different contact configurations, the I-V results reveal a rectifying barrier in the n-GaNn-6H-SiC heterostructures. When GaN is negatively biased, the current is exponentially proportional to the applied voltage with the built-in barrier being 0.4-1.1 eV for the HVPE samples and 0.5 eV for the MBE sample. DLTS measurements reveal intense band-like deep level states in the interfacial region of the heterostructure, and the Fermi-level pinning by these deep level defects is invoked to account for the interfacial rectifying barrier of the heterostructures. © 2005 American Institute of Physics.published_or_final_versio

The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire

The carrier concentration and scattering mechanism in undoped GaN film grown on sapphire were investigated. The film was grown on sapphire using metal organic chemical vapor deposition (MOCVD). Confocal micro-Raman spectroscopic measurements and temperature-dependant Hall (TDH) measurements were performed for the study of the depth distribution of the carrier density across the GaN film. The existence of a nonuniform spatial distribution of free carriers in the film with a highly conductive layer of ∼1 μm thickness near the GaN sapphire boundary was confirmed from the study. The electron mobility limiting effect of nitrogen vacancies on GaN bulk film was also discussed.published_or_final_versio

Deep level defect in Si-implanted GaN n +-p junction

The results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.published_or_final_versio

Semantic Mutation Testing for Multi-Agent Systems

This paper introduces semantic mutation testing (SMT) into multiagent systems. SMT is a test assessment technique that makes changes to the interpretation of a program and then examines whether a given test set has the ability to detect each change to the original interpretation. These changes represent possible misunderstandings of how the program is interpreted. SMT is also a technique for assessing the robustness of a program to semantic changes. This paper applies SMT to three rule-based agent programming languages, namely Jason, GOAL and 2APL, provides several contexts in which SMT for these languages is useful, and proposes three sets of semantic mutation operators (i.e., rules to make semantic changes) for these languages respectively, and a set of semantic mutation operator classes for rule-based agent languages. This paper then shows, through preliminary evaluation of our semantic mutation operators for Jason, that SMT has some potential to assess tests and program robustness