Undoped gallium antimonide studied by positron annihilation spectroscopy

Positron lifetime spectroscopy has been used to study the vacancy type defects in undoped gallium antimonide. Temperature dependent positron trapping into the VGarelated defect having a characteristic lifetime of 310ps was observed in the as-grown sample. The lifetime data were well described by a model involving the thermal ionization (0/-) of the VGa-related defect and its ionization energy was found to be E(0/)=83meV. For the electron irradiated sample, the VGa-related defect with lifetime of 310ps that was found in the non-irradiated samples was also identified. Moreover, another lifetime component (280ps) was only observed in the electron irradiated sample but not in the non-irradiated sample. It was also attributed to the V Ga-related defect. The two identified VGa-related defects should have different microstructures because of their difference in characteristic lifetimes. The 280ps component remains thermally stable after the 500°C annealing while the 310ps component anneals at 300°C.published_or_final_versio

Vacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopy

Paper no. R3.19Positron lifetime spectroscopy was employed to study the as-electron-irradiated (10 MeV, 1×10 18 cm -2) n-type 6H silicon carbide sample in the measuring temperature range of 15 K to 294 K. Isochronal annealing studies were also performed up to the temperature of 1373 K by carrying out the room temperature positron lifetime measurement. Negatively charged carbon vacancies and V cV si divacancy were identified as the major vacancy type defects induced by the electron irradiation process. The concentration of the V cV si divacancy was found to decrease dramatically after the 1973 K annealing.published_or_final_versio

Annealing study of A1/GaSb contact with the use of doppler broadening technique

Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monitoring the Doppler broadening of the annihilation radiation as a function of the positron implanting energy. The S-parameter against positron energy data was successfully fitted by a three-layer model (Al/interface/GaSb). The annealing out of the open volume defects in the polycrystalline Al layer was revealed by the decrease in the S-parameter and the increase in the effective diffusion length of the Al layer. For the as-deposited samples, a∼5 nm interfacial region with S-parameter larger than those of the Al overlayer and the bulk was identified. After the 400^ºC annealing, this interfacial region extends to over 40 nm and its S-parameter dramatically drops. This is possibly due to the new phase formation at the interface. Annealing behaviors of SB and L+,B of the GaSb bulk showed the annealing out of positron traps (possibly the VGa-related defect) at 250ºC. However, a further annealing at 400ºC induces the formation of positron traps, which are possibly of another kind of VGa-related defect and the positron shallow trap GaSb antisite.published_or_final_versionProceedings of the 35th Polish Seminar on Positron Annihilation (PSPA), Turawa, Poland, 20-24 September 2004. In Acta Physica Polonica Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics, 2005, v. 107 n. 5, p. 874-87

Deep-level defects in n-type 6H silicon carbide induced by He implantation

Defects in He-implanted n -type 6H-SiC samples have been studied with deep-level transient spectroscopy. A deep-level defect was identified by an intensity with a logarithmical dependence on the filling pulse width, which is characteristic of dislocation defects. Combined with information extracted from positron-annihilation spectroscopic measurements, this defect was associated with the defect vacancy bound to a dislocation. Defect levels at 0.380.44 eV (E1 E2), 0.50, 0.53, and 0.640.75 eV (Z1 Z2) were also induced by He implantation. Annealing studies on these samples were also performed and the results were compared with those obtained from e- -irradiated (0.3 and 1.7 MeV) and neutron-irradiated n -type 6H-SiC samples. The E1 E2 and the Z1 Z2 signals found in the He-implanted sample are more thermally stable than those found in the electron-irradiated or the neutron-irradiated samples. © 2005 American Institute of Physics.published_or_final_versio

Entropy Projection Curved Gabor with Random Forest and SVM for Face Recognition

In this work, we propose a workflow for face recognition under occlusion using the entropy projection from the curved Gabor filter, and create a representative and compact features vector that describes a face. Despite the reduced vector obtained by the entropy projection, it still presents opportunity for further dimensionality reduction. Therefore, we use a Random Forest classifier as an attribute selector, providing a 97% reduction of the original vector while keeping suitable accuracy. A set of experiments using three public image databases: AR Face, Extended Yale B with occlusion and FERET illustrates the proposed methodology, evaluated using the SVM classifier. The results obtained in the experiments show promising results when compared to the available approaches in the literature, obtaining 98.05% accuracy for the complete AR Face, 97.26% for FERET and 81.66% with Yale with 50% occlusion

3D FEM to predict residual stresses of press-braked thin-walled steel sections

Cold-formed steel sections are normally produced by cold work manufacturing processes. The amount of cold work to form the sections may have induced residual stresses in the section especially in the area of bending. Hence, these cold work processes may have significant effects on the section behaviour and load-bearing capacity. There was a lack of studies in investigating the effects of residual stresses raised by press-braking operations unlike the roll-forming operation. Therefore, a 3D finite element simulation was employed to simulate this forming process. This study investigated the magnitude of the maximum residual stresses along the length of the corner region and through-thickness residual stress variations induced by the press-braking forming process. The study concluded that residual stresses are not linear longitudinally (along the corner region). Maximum residual stresses exist near the middle surface of the plate. The comparison of the 3D-FE results with the 2D-FE results illustrate that 3D-FE has a variation in transverse and longitudinal residual stresses along the plate length. In addition, 2D-FE results overestimate the residual stresses along the corner region

In Search of an Uncultured Human-Associated TM7 Bacterium in the Environment

We have identified an environmental bacterium in the Candidate Division TM7 with ≥98.5% 16S rDNA gene homology to a group of TM7 bacteria associated with the human oral cavity and skin. The environmental TM7 bacterium (referred to as TM7a-like) was readily detectable in wastewater with molecular techniques over two years of sampling. We present the first images of TM7a-like cells through FISH technique and the first images of any TM7 as viable cells through the STARFISH technique. In situ quantification showed TM7 concentration in wastewater up to five times greater than in human oral sites. We speculate that upon further characterization of the physiology and genetics of the TM7a-like bacterium from environmental sources and confirmation of its genomic identity to human-associated counterparts it will serve as model organisms to better understand its role in human health. The approach proposed circumvents difficulties imposed by sampling humans, provides an alternative strategy to characterizing some diseases of unknown etiology, and renders a much needed understanding of the ecophysiological role hundreds of unique Bacteria and Archaea strains play in mixed microbial communities

Notch signaling during human T cell development

Notch signaling is critical during multiple stages of T cell development in both mouse and human. Evidence has emerged in recent years that this pathway might regulate T-lineage differentiation differently between both species. Here, we review our current understanding of how Notch signaling is activated and used during human T cell development. First, we set the stage by describing the developmental steps that make up human T cell development before describing the expression profiles of Notch receptors, ligands, and target genes during this process. To delineate stage-specific roles for Notch signaling during human T cell development, we subsequently try to interpret the functional Notch studies that have been performed in light of these expression profiles and compare this to its suggested role in the mouse

The detection and location estimation of disasters using Twitter and the identification of Non-Governmental Organisations using crowdsourcing

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