Multi-Valley Superconductivity In Ion-Gated MoS2 Layers

Layers of transition metal dichalcogenides (TMDs) combine the enhanced effects of correlations associated with the two-dimensional limit with electrostatic control over their phase transitions by means of an electric field. Several semiconducting TMDs, such as MoS$_2$, develop superconductivity (SC) at their surface when doped with an electrostatic field, but the mechanism is still debated. It is often assumed that Cooper pairs reside only in the two electron pockets at the K/K' points of the Brillouin Zone. However, experimental and theoretical results suggest that a multi-valley Fermi surface (FS) is associated with the SC state, involving 6 electron pockets at the Q/Q' points. Here, we perform low-temperature transport measurements in ion-gated MoS$_2$ flakes. We show that a fully multi-valley FS is associated with the SC onset. The Q/Q' valleys fill for doping$\gtrsim2\cdot10^{13}$cm$^{-2}$, and the SC transition does not appear until the Fermi level crosses both spin-orbit split sub-bands Q$_1$ and Q$_2$. The SC state is associated with the FS connectivity and promoted by a Lifshitz transition due to the simultaneous population of multiple electron pockets. This FS topology will serve as a guideline in the quest for new superconductors.Comment: 12 pages, 7 figure

Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene

We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and five-layer samples under a large induced surface charge density both above and below the glass transition temperature of the polymer. We find that the carrier mobility shows a strong asymmetry between the hole and electron doping regime. We then employ ab-initio density functional theory (DFT) calculations to determine the average scattering lifetime from the experimental data. We explain its peculiar dependence on the carrier density in terms of the specific properties of the electrolyte we used in our experiments.Comment: 6 pages, 3 figure

Control of bulk superconductivity in a BCS superconductor by surface charge doping via electrochemical gating

The electrochemical gating technique is a powerful tool to tune the surface conduction properties of various materials by means of pure charge doping, but its efficiency is thought to be hampered in materials with a good electronic screening. We show that, if applied to a metallic superconductor (NbN thin films), this approach allows observing reversible enhancements or suppressions of the bulk superconducting transition temperature, which vary with the thickness of the films. These results are interpreted in terms of proximity effect, and indicate that the effective screening length depends on the induced charge density, becoming much larger than that predicted by standard screening theory at very high electric fields

Microwave surface resistance of pristine and neutron-irradiated MgB2 samples in magnetic field

We report on the microwave surface resistance of two polycrystalline Mg11B2 samples; one consists of pristine material, the other has been irradiated at very high neutron fluence. It has already been reported that in the strongly irradiated sample the two gaps merge into a single value. The mw surface resistance has been measured in the linear regime as a function of the temperature and the DC magnetic field, at increasing and decreasing fields. The results obtained in the strongly irradiated sample are quite well justified in the framework of a generalized Coffey and Clem model, in which we take into account the field distribution inside the sample due to the critical state. The results obtained in the pristine sample show several anomalies, especially at low temperatures, which cannot be justified in the framework of standard models for the fluxon dynamics. Only at temperatures near Tc and for magnetic fields greater than 0.5Hc2(T) the experimental data can quantitatively be accounted for by the Coffey and Clem model, provided that the upper-critical-field anisotropy is taken into due account.Comment: RevTeX, 13 pages with 10 eps figures, in press on EPJ

Huge field-effect surface charge injection and conductance modulation in metallic thin films by electrochemical gating

The field-effect technique, popular thanks to its application in common field-effect transistors, is here applied to metallic thin films by using as a dielectric a novel polymer electrolyte solution. The maximum injected surface charge, determined by a suitable modification of a classic method of electrochemistry called double-step chronocoulometry, reached more than 4 × 10 15 charges/cm 2 . At room temperature, relative variations of resistance up to 8%, 1.9% and 1.6% were observed in the case of gold, silver and copper, respectively and, if the films are thick enough (≥25 nm), results can be nicely explained within a free-electron model with parallel resistive channels. The huge charge injections achieved make this particular field-effect technique very promising for a vast variety of materials such as unconventional superconductors, graphene and 2D-like materials. © 2012 Elsevier B.V

The low-frequency response in the surface superconducting state of ZrB12_{12} single crystal}

The large nonlinear response of a single crystal ZrB$_{12}$ to an ac field (frequency 40 - 2500 Hz) for $H_0>H_{c2}$ has been observed. Direct measurements of the ac wave form and the exact numerical solution of the Ginzburg-Landau equations, as well as phenomenological relaxation equation, permit the study of the surface superconducting states dynamics. It is shown, that the low frequency response is defined by transitions between the metastable superconducting states under the action of an ac field. The relaxation rate which determines such transitions dynamics, is found.Comment: 7 pages, 11 figure

Ultra-compact binary neural networks for human activity recognition on RISC-V processors

Human Activity Recognition (HAR) is a relevant inference task in many mobile applications. State-of-the-art HAR at the edge is typically achieved with lightweight machine learning models such as decision trees and Random Forests (RFs), whereas deep learning is less common due to its high computational complexity. In this work, we propose a novel implementation of HAR based on deep neural networks, and precisely on Binary Neural Networks (BNNs), targeting low-power general purpose processors with a RISC-V instruction set. BNNs yield very small memory footprints and low inference complexity, thanks to the replacement of arithmetic operations with bit-wise ones. However, existing BNN implementations on general purpose processors impose constraints tailored to complex computer vision tasks, which result in over-parametrized models for simpler problems like HAR. Therefore, we also introduce a new BNN inference library, which targets ultra-compact models explicitly. With experiments on a single-core RISC-V processor, we show that BNNs trained on two HAR datasets obtain higher classification accuracy compared to a state-of-the-art baseline based on RFs. Furthermore, our BNN reaches the same accuracy of a RF with either less memory (up to 91%) or more energy-efficiency (up to 70%), depending on the complexity of the features extracted by the RF

Strong-coupling d-wave superconductivity in PuCoGa5 probed by point-contact spectroscopy

Superconductivity is due to an attractive interaction between electrons that, below a critical temperature, drives them to form Cooper pairs and to condense into a ground state separated by an energy gap from the unpaired states. In the simplest cases, the pairing is mediated by lattice vibrations and the wavefunction of the pairs is isotropic. Less conventional pairing mechanisms can favour more exotic symmetries of the Cooper pairs. Here, we report on point-contact spectroscopy measurements in PuCoGa5, a moderate heavy-fermion superconductor with a record high critical temperature Tc=18.5 K. The results prove that the wavefunction of the paired electrons has a d-wave symmetry, with four lobes and nodes, and show that the pairing is likely to be mediated by spin fluctuations. Electronic structure calculations, which take into account the full structure of the f-orbital multiplets of Pu, provide a hint of the possible origin of these fluctuations

DIAGNÓSTICO PARTICIPATIVO DEL PLAN DE DESARROLLO REGIONAL PARA EL DEPARTAMENTO CRUZ DEL EJE

Desde la Facultad de Ciencias Agropecuarias de la Universidad Nacional de Córdoba, junto a Instituciones y Municipios / Comunas del Dpto. Cruz del Eje, Provincia de Córdoba, se plantea el Plan de Desarrollo Regional que apunta a instalar una “Cultura del trabajo” como forma de contribuir al mejoramiento de la situación de existencia de las personas que habitan en dicha región, buscando rescatar las fortalezas que poseen las mismas, y modificar aquello que se presente como un obstáculo para su desarrollo. Se definieron tres ejes fundamentales: la “Sustentabilidad”, el “ Trabajo en Grupo” y la “Articulación Interinstitucional”. Este Plan contempla tres etapas: 1) Diagnóstico de la situación en forma participativa; 2) Formulación de proyectos de desarrollo; 3) Implementación del Plan. En la primera etapa se aplicó una metodología participativa con talleres y se utilizaron variados instrumentos como el metaplan y árbol de problemas

Critical Field of Al-Doped MgB2 Samples: Correlation with the Suppression of Sigma-Band Gap

In this Letter, the study of the effect of Al substitution on the upper critical field, Bc2, in AlxMg1-xB2 samples is presented. We find a straightforward correlation between Bc2 and the sigma-band gap, Delta_sigma, evaluated by point-contact measurements. Up to x=0.2 Bc2 can be well described within a clean limit model and its decrease with x is directly related to the suppression of Delta_sigma. For larger doping we observed the crossover to the dirty regime driven mostly by the strong decrease of Delta_sigma rather than by the increase of the sigma-band scattering rateComment: 5 pages, 4 figure