6,821 research outputs found
Analytical Expression for the RKKY Interaction in Doped Graphene
We obtain an analytical expression for the Ruderman-Kittel-Kasuya-Yosida
(RKKY) interaction in electron or hole doped graphene for linear Dirac
bands. The results agree very well with the numerical calculations for the full
tight-binding band structure in the regime where the linear band structure is
valid. The analytical result, expressed in terms of the Meijer G-function,
consists of a product of two oscillatory terms, one coming from the
interference between the two Dirac cones and the second coming from the finite
size of the Fermi surface. For large distances, the Meijer G-function behaves
as a sinusoidal term, leading to the result for moments located on the same sublattice. The
dependence, which is the same for the standard two-dimensional electron gas, is
universal irrespective of the sublattice location and the distance direction of
the two moments except when (undoped case), where it reverts to the
dependence. These results correct several inconsistencies found in the
literature.Comment: 5 pages, 5 figure
Probing molecular dynamics at the nanoscale via an individual paramagnetic center
Understanding the dynamics of molecules adsorbed to surfaces or confined to
small volumes is a matter of increasing scientific and technological
importance. Here, we demonstrate a pulse protocol using individual paramagnetic
nitrogen vacancy (NV) centers in diamond to observe the time evolution of 1H
spins from organic molecules located a few nanometers from the diamond surface.
The protocol records temporal correlations among the interacting 1H spins, and
thus is sensitive to the local system dynamics via its impact on the nuclear
spin relaxation and interaction with the NV. We are able to gather information
on the nanoscale rotational and translational diffusion dynamics by carefully
analyzing the time dependence of the NMR signal. Applying this technique to
various liquid and solid samples, we find evidence that liquid samples form a
semi-solid layer of 1.5 nm thickness on the surface of diamond, where
translational diffusion is suppressed while rotational diffusion remains
present. Extensions of the present technique could be adapted to highlight the
chemical composition of molecules tethered to the diamond surface or to
investigate thermally or chemically activated dynamical processes such as
molecular folding
Optical properties of an ensemble of G-centers in silicon
We addressed the carrier dynamics in so-called G-centers in silicon
(consisting of substitutional-interstitial carbon pairs interacting with
interstitial silicons) obtained via ion implantation into a
silicon-on-insulator wafer. For this point defect in silicon emitting in the
telecommunication wavelength range, we unravel the recombination dynamics by
time-resolved photoluminescence spectroscopy. More specifically, we performed
detailed photoluminescence experiments as a function of excitation energy,
incident power, irradiation fluence and temperature in order to study the
impact of radiative and non-radiative recombination channels on the spectrum,
yield and lifetime of G-centers. The sharp line emitting at 969 meV (1280
nm) and the broad asymmetric sideband developing at lower energy share the same
recombination dynamics as shown by time-resolved experiments performed
selectively on each spectral component. This feature accounts for the common
origin of the two emission bands which are unambiguously attributed to the
zero-phonon line and to the corresponding phonon sideband. In the framework of
the Huang-Rhys theory with non-perturbative calculations, we reach an
estimation of 1.60.1 \angstrom for the spatial extension of the
electronic wave function in the G-center. The radiative recombination time
measured at low temperature lies in the 6 ns-range. The estimation of both
radiative and non-radiative recombination rates as a function of temperature
further demonstrate a constant radiative lifetime. Finally, although G-centers
are shallow levels in silicon, we find a value of the Debye-Waller factor
comparable to deep levels in wide-bandgap materials. Our results point out the
potential of G-centers as a solid-state light source to be integrated into
opto-electronic devices within a common silicon platform
Stark shift and field ionization of arsenic donors in Si-SOI structures
We develop an efficient back gate for silicon-on-insulator (SOI) devices
operating at cryogenic temperatures, and measure the quadratic hyperfine Stark
shift parameter of arsenic donors in isotopically purified Si-SOI layers
using such structures. The back gate is implemented using MeV ion implantation
through the SOI layer forming a metallic electrode in the handle wafer,
enabling large and uniform electric fields up to 2 V/m to be
applied across the SOI layer. Utilizing this structure we measure the Stark
shift parameters of arsenic donors embedded in the Si SOI layer and find
a contact hyperfine Stark parameter of m/V. We also demonstrate electric-field driven dopant ionization in
the SOI device layer, measured by electron spin resonance.Comment: 5 pages, 3 figure
Anisotropic and strong negative magneto-resistance in the three-dimensional topological insulator Bi2Se3
We report on high-field angle-dependent magneto-transport measurements on
epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At
low temperature, we observe quantum oscillations that demonstrate the
simultaneous presence of bulk and surface carriers. The magneto- resistance of
Bi2Se3 is found to be highly anisotropic. In the presence of a parallel
electric and magnetic field, we observe a strong negative longitudinal
magneto-resistance that has been consid- ered as a smoking-gun for the presence
of chiral fermions in a certain class of semi-metals due to the so-called axial
anomaly. Its observation in a three-dimensional topological insulator implies
that the axial anomaly may be in fact a far more generic phenomenon than
originally thought.Comment: 6 pages, 4 figure
Local structure of liquid carbon controls diamond nucleation
Diamonds melt at temperatures above 4000 K. There are no measurements of the
steady-state rate of the reverse process: diamond nucleation from the melt,
because experiments are difficult at these extreme temperatures and pressures.
Using numerical simulations, we estimate the diamond nucleation rate and find
that it increases by many orders of magnitude when the pressure is increased at
constant supersaturation. The reason is that an increase in pressure changes
the local coordination of carbon atoms from three-fold to four-fold. It turns
out to be much easier to nucleate diamond in a four-fold coordinated liquid
than in a liquid with three-fold coordination, because in the latter case the
free-energy cost to create a diamond-liquid interface is higher. We speculate
that this mechanism for nucleation control is relevant for crystallization in
many network-forming liquids. On the basis of our calculations, we conclude
that homogeneous diamond nucleation is likely in carbon-rich stars and unlikely
in gaseous planets
Remote participation during glycosylation reactions of galactose building blocks: Direct evidence from cryogenic vibrational spectroscopy
The stereoselective formation of 1,2‐cis‐glycosidic bonds is challenging. However, 1,2‐cis‐selectivity can be induced by remote participation of C4 or C6 ester groups. Reactions involving remote participation are believed to proceed via a key ionic intermediate, the glycosyl cation. Although mechanistic pathways were postulated many years ago, the structure of the reaction intermediates remained elusive owing to their short‐lived nature. Herein, we unravel the structure of glycosyl cations involved in remote participation reactions via cryogenic vibrational spectroscopy and first principles theory. Acetyl groups at C4 ensure α‐selective galactosylations by forming a covalent bond to the anomeric carbon in dioxolenium‐type ions. Unexpectedly, also benzyl ether protecting groups can engage in remote participation and promote the stereoselective formation of 1,2‐cis‐glycosidic bonds
Effects of hole-doping on the magnetic ground state and excitations in the edge-sharing CuO chains of CaYCuO
Neutron scattering experiments were performed on the undoped and hole-doped
CaYCuO, which consists of ferromagnetic edge-sharing
CuO chains. It was previously reported that in the undoped
CaYCuO there is an anomalous broadening of spin-wave
excitations along the chain, which is caused mainly by the antiferromagnetic
interchain interactions [Matsuda , Phys. Rev. B 63, 180403(R)
(2001)]. A systematic study of temperature and hole concentration dependencies
of the magnetic excitations shows that the magnetic excitations are softened
and broadened with increasing temperature or doping holes irrespective of
direction. The broadening is larger at higher . A characteristic feature is
that hole-doping is much more effective to broaden the excitations along the
chain. It is also suggested that the intrachain interaction does not change so
much with increasing temperature or doping although the anisotropic interaction
and the interchain interaction are reduced. In the spin-glass phase (=1.5)
and nearly disordered phase (=1.67) the magnetic excitations are much
broadened in energy and . It is suggested that the spin-glass phase
originates from the antiferromagnetic clusters, which are caused by the hole
disproportionation.Comment: 8 pages, submitted to Phys. Rev.
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