Effect of organic, low-input and conventional production systems on yield and diseases in winter barley

The effect of organic, low-input and conventional management practices on barley yield and disease incidence was assessed in field trials over two years. Conventional fertility management (based on mineral fertiliser applications) and conventional crop protection (based on chemosynthetic pesticides) significantly increased the yield of winter barley as compared to organic fertility and crop protection regimes. Severity of leaf blotch (Rhynchosporium secalis) was highest under organic fertility and crop protection management and was correlated inversely with yield. For mildew (Erysiphe graminis), an interaction between fertility management and crop protection was detected. Conventional crop protection reduced severity of the disease, only under conventional fertility management. Under organic fertility management, incidence of mildew was low and application of synthetic pesticides in “low input” production systems had no significant effect on disease severity

Effect of organic, low-input and conventional production systems on pesticide and growth regulator residues in wheat, potato and cabbage

The Nafferton factorial systems comparison (NFSC) experiments facilitate the investigation of effects of, and interaction between, three production system components - a) rotational position, b) fertility and c) crop protection management - in organic, conventional and low-input crop management systems. This paper presents first results on pesticide and growth regulator residues observed over a period of two years. Residues were only detected for three (Chlormequat, Chlorothalonil and Aldicarb) of the 28 pesticides used in the experiments. As expected, residue levels were affected by the crop protection practices, but significant effects of fertility management practices were also detected. This indicates that the human health risks associated with pesticide residues may increase in low input systems which attempt to reduce the environmental impact of conventional farming systems by switching to organic matter based fertilisation regimes

Retinal pigment epithelial cells mitigate the effects of complement attack by endocytosis of C5b-9

Retinal pigment epithelial (RPE) cell death is a hallmark of age-related macular degeneration. The alternative pathway of complement activation is strongly implicated in RPE cell dysfunction and loss in age-related macular degeneration; therefore, it is critical that RPE cells use molecular strategies to mitigate the potentially harmful effects of complement attack. We show that the terminal complement complex C5b-9 assembles rapidly on the basal surface of cultured primary porcine RPE cells but disappears over 48 h without any discernable adverse effects on the cells. However, in the presence of the dynamin inhibitor dynasore, C5b-9 was almost completely retained at the cell surface, suggesting that, under normal circumstances, it is eliminated via the endocytic pathway. In support of this idea, we observed that C5b-9 colocalizes with the early endosome marker EEA1 and that, in the presence of protease inhibitors, it can be detected in lysosomes. Preventing the endocytosis of C5b-9 by RPE cells led to structural defects in mitochondrial morphology consistent with cell stress. We conclude that RPE cells use the endocytic pathway to prevent the accumulation of C5b-9 on the cell surface and that processing and destruction of C5b-9 by this route are essential for RPE cell survival

Recent Advances in High Density Area Array Interconnect Bonding for 3D Integration

The demand for more complex and multifunctional micro systems with enhanced performance characteristics for military applications is driving the electronics industry toward the use of best-of-breed materials and device technologies. Threedimensional (3-D) integration provides a way to build complex microsystems through bonding and interconnection of individually optimized device layers without compromising system performance and fabrication yield. Bonding of device layers can be achieved through polymer bonding or metal-metal interconnect bonding with a number of metalmetal systems. RTI has been investigating and characterizing Cu-Cu and CulSn-Cu processes for high density area array imaging applications, demonstrating high yield bonding between sub-I5 11m pads on large area array configurations. This paper will review recent advances in the development of high yield, large area array metal-metal interconnects which enable 3-D integration of heterogeneous materials (e.g. HgCdTe with silicon) and heterogeneous fabrication processes (e.g. infrared emitters or microbolometers with ICs) for imaging and scene projector applications

Cost-benefit analysis for commissioning decisions in GEO600

Gravitational wave interferometers are complex instruments, requiring years of commissioning to achieve the required sensitivities for the detection of gravitational waves, of order 10^-21 in dimensionless detector strain, in the tens of Hz to several kHz frequency band. Investigations carried out by the GEO600 detector characterisation group have shown that detector characterisation techniques are useful when planning for commissioning work. At the time of writing, GEO600 is the only large scale laser interferometer currently in operation running with a high duty factor, 70%, limited chiefly by the time spent commissioning the detector. The number of observable gravitational wave sources scales as the product of the volume of space to which the detector is sensitive and the observation time, so the goal of commissioning is to improve the detector sensitivity with the least possible detector down time. We demonstrate a method for increasing the number of sources observable by such a detector, by assessing the severity of non-astrophysical noise contaminations to efficiently guide commissioning. This method will be particularly useful in the early stages and during the initial science runs of the aLIGO and adVirgo detectors, as they are brought up to design performance.Comment: 17 pages, 17 figures, 2 table

Prototyping Self in Silicon Valley, Deep Diversity as a Framework for Anthropological Inquiry

High-technology work fuels a dynamic global exchange from technopoles throughout the world, but especially between East and South Asia and the northern Californian region of Silicon Valley. This migration drives an expanded number of ancestral identities. Professional and activity-based identities flourish as Silicon Valley’s strong narrative of meritocracy loosens the grip of birth ascription on the creation of identities. These achieved identities proliferate as people experiment on their own sense of self. Traditional conceptual tools related to immigration, and even such contemporary approaches as Appadurai’s ethnoscapes, do not adequately illuminate the ethnographic data on Silicon Valley workers, families, and especially youth. The concept of deep diversity, first posed by philosopher Charles Taylor and reified by anthropologist Clifford Geertz, reinterprets the interactions of traditional ethnic identity categories, providing a powerful framework with which to think

A vertical inertial sensor with interferometric readout

High precision interferometers such as gravitational-wave detectors require complex seismic isolation systems in order to decouple the experiment from unwanted ground motion. Improved inertial sensors for active isolation potentially enhance the sensitivity of existing and future gravitational-wave detectors, especially below 30 Hz, and thereby increase the range of detectable astrophysical signals. This paper presents a vertical inertial sensor which senses the relative motion between an inertial test mass suspended by a blade spring and a seismically isolated platform. An interferometric readout was used which introduces low sensing noise, and preserves a large dynamic range due to fringe-counting. The expected sensitivity is comparable to other state-of-the-art interferometric inertial sensors and reaches values of $10^{-10}\,\text{m}/\sqrt{\text{Hz}}$ at 100 mHz and $10^{-12}\,\text{m}/\sqrt{\text{Hz}}$ at 1 Hz. The potential sensitivity improvement compared to commercial L-4C geophones is shown to be about two orders of magnitude at 10 mHz and 100 mHz and one order of magnitude at 1 Hz. The noise performance is expected to be limited by thermal noise of the inertial test mass suspension below 10 Hz. Further performance limitations of the sensor, such as tilt-to-vertical coupling from a non-perfect levelling of the test mass and nonlinearities in the interferometric readout, are also quantified and discussed

The Belle II SVD detector

The Silicon Vertex Detector (SVD) is one of the main detectors in the Belle II experiment at KEK, Japan. In combination with a pixel detector, the SVD determines precise decay vertex and low-momentum track reconstruction. The SVD ladders are being developed at several institutes. For the development of the tracking algorithm as well as the performance estimation of the ladders, beam tests for the ladders were performed. We report an overview of the SVD development, its performance measured in the beam test, and the prospect of its assembly and commissioning until installation

Study of Upsilon(3S,2S) -> eta Upsilon(1S) and Upsilon(3S,2S) -> pi+pi- Upsilon(1S) hadronic trasitions

We study the Upsilon(3S,2S)->eta Upsilon(1S) and Upsilon(3S,2S)->pi+pi- Upsilon(1S) transitions with 122 million Upsilon(3S) and 100 million Upsilon(2S) mesons collected by the BaBar detector at the PEP-II asymmetric energy e+e- collider. We measure B[Upsilon(2S)->eta Upsilon(1S)]=(2.39+/-0.31(stat.)+/-0.14(syst.))10^-4 and Gamma[Upsilon(2S)->eta Upsilon(1S)]/Gamma[Upsilon(2S)-> pi+pi- Upsilon(1S)]=(1.35+/-0.17(stat.)+/-0.08(syst.))10^-3. We find no evidence for Upsilon(3S)->eta Upsilon(1S) and obtain B[Upsilon(3S)->eta Upsilon(1S)]<1.0 10^-4 and Gamma[Upsilon(3S)->eta Upsilon(1S)]/Gamma[Upsilon(3S)->pi+pi- Upsilon(1S)]<2.3 10^-3 as upper limits at the 90% confidence level. We also provide improved measurements of the Upsilon(2S) - Upsilon(1S) and Upsilon(3S) - Upsilon(1S) mass differences, 562.170+/-0.007(stat.)+/-0.088(syst.) MeV/c^2 and 893.813+/-0.015(stat.)+/-0.107(syst.) MeV/c^2 respectively.Comment: 8 pages, 16 encapsulated postscript figures, submitted to Phys.Rev.