Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN

The influence of substrate miscut on Al0.5Ga0.5 N layers was investigated using cathodoluminescence (CL) hyperspectral imaging and secondary electron imaging in an environmental scanning electron microscope. The samples were also characterized using atomic force microscopy and high resolution X-ray diffraction. It was found that small changes in substrate miscut have a strong influence on the morphology and luminescence properties of the AlGaN layers. Two different types are resolved. For low miscut angle, a crack-free morphology consisting of randomly sized domains is observed, between which there are notable shifts in the AlGaN near band edge emission energy. For high miscut angle, a morphology with step bunches and compositional inhomogeneities along the step bunches, evidenced by an additional CL peak along the step bunches, are observed

Organic–inorganic semiconductor heterojunctions for hybrid light-emitting diodes

This chapter discusses an alternative approach for generating white light through hybrid inorganic–organic light-emitting diodes (LEDs), combining blue-emitting organic LEDs with organic energy-down converters. Inorganic LEDs, based on III-nitride semiconductors, exhibit extremely high efficiencies, whereas organic color converters are low-cost and have versatile absorption and emission properties. An extensive background is provided to introduce nitride semiconductors and LEDs, but also to give the background to colorimetry and radiometry of light sources, important for the characterization of the hybrid device and an understanding of how the emission properties influence the color parameters, such as color rendering and luminous efficacy. A short introduction to the synthesis of color converters aims to illustrate the controlling factors in the design of the converter materials. Two types of organic materials will be introduced. The first are light-emitting polymers, which are readily commercially available and cost effective. The second type are luminescent small molecules, which will be discussed in more detail and the examples given showcase the evolution of a series of small molecules and their use in hybrid inorganic–organic LED

Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures

Optoelectronic devices based on the III-nitride system exhibit remarkably good optical efficiencies despite suffering from a large density of defects. In this work we use cathodoluminescence (CL) hyperspectral imaging to study InGaN/GaN multiple quantum well (MQW) structures. Different types of trench defects with varying trench width, namely wide or narrow trenches forming closed loops and open loops, are investigated in the same hyperspectral CL measurement. A strong redshift (90 meV) and intensity increase of the MQW emission is demonstrated for regions enclosed by wide trenches, whereas those within narrower trenches only exhibit a small redshift (10 meV) and a slight reduction of intensity compared with the defect-free surrounding area. Transmission electron microscopy (TEM) showed that some trench defects consist of a raised central area, which is caused by an increase of about 40% in the thickness of the InGaN wells. The causes of the changes in luminescences are also discussed in relation to TEM results identifying the underlying structure of the defect. Understanding these defects and their emission characteristics is important for further enhancement and development of light-emitting diodes

Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN

We combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors. Combining electron channeling contrast imaging and cathodoluminescence imaging enables both the structural and luminescence properties of a sample to be investigated without structural damage to the sample. The electron channeling contrast image is very sensitive to distortions of the crystal lattice, resulting in individual threading dislocations appearing as spots with black–white contrast. Dislocations giving rise to nonradiative recombination are observed as black spots in the cathodoluminescence image. Comparison of the images from exactly the same micron-scale region of a sample demonstrates a one-to-one correlation between the presence of single threading dislocations and resolved dark spots in the cathodoluminescence image. In addition, we have also obtained an atomic force microscopy image from the same region of the sample, which confirms that both pure edge dislocations and those with a screw component (i.e., screw and mixed dislocations) act as nonradiative recombination centers for the Si-doped c-plane GaN thin film investigated

Cathodoluminescence studies of chevron features in semi-polar (1122) InGaN/GaN multiple quantum well structures

Epitaxial overgrowth of semi-polar III-nitride layers and devices often leads to arrowhead-shaped surface features, referred to as chevrons. We report on a study into the optical, structural, and electrical properties of these features occurring in two very different semi-polar structures, a blue-emitting multiple quantum well structure, and an amber-emitting light-emitting diode. Cathodoluminescence (CL) hyperspectral imaging has highlighted shifts in their emission energy, occurring in the region of the chevron. These variations are due to different semi-polar planes introduced in the chevron arms resulting in a lack of uniformity in the InN incorporation across samples, and the disruption of the structure which could cause a narrowing of the quantum wells (QWs) in this region. Atomic force microscopy has revealed that chevrons can penetrate over 150 nm into the sample and quench light emission from the active layers. The dominance of non-radiative recombination in the chevron region was exposed by simultaneous measurement of CL and the electron beam-induced current. Overall, these results provide an overview of the nature and impact of chevrons on the luminescence of semi-polar devices

Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280 nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain

Implementing fluorescent MOFs as down-converting layers in hybrid light-emitting diodes

One of the most important non-radiative relaxation processes that limits the quantum yield of a fluorophore is related to aggregation of the molecules in the solid-state causing excimer quenching. To limit this quenching mechanism, the fluorophore can be contained within a well-ordered 3D system that minimises aggregation through rigid bonds and spatial separation in a defined topological construct. Herein, the synthesis, characterisation and application as a down-converter of a new luminescent 3D material (MOF-BTBMBA) that incorporates a building block based on a benzothiadiazole (BT) derivative (BTBMBA) in a metal-organic framework (MOF) is presented. Notably, photoluminescent quantum yield and hybrid LED performance are significantly improved for the MOF-based device compared to that prepared with the free ligand, highlighting the effectiveness of the rigid scaffold arrangement

A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content

Abstract With a view to supporting the development of ultra-violet light-emitting diodes and related devices, the compositional, emission and morphology properties of Si-doped n-type Al x Ga1-x N alloys are extensively compared. This study has been designed to determine how the different Al x Ga1-x N crystal orientations (polar (0001) and semipolar (11–22)) affect group-III composition and Si incorporation. Wavelength dispersive x-ray (WDX) spectroscopy was used to determine the AlN mole fraction (x ≈ 0.57–0.85) and dopant concentration (3 × 1018–1 × 1019 cm−3) in various series of Al x Ga1-x N layers grown on (0001) and (11–22) AlN/sapphire templates by metalorganic chemical vapor deposition. The polar samples exhibit hexagonal surface features with Ga-rich boundaries confirmed by WDX mapping. Surface morphology was examined by atomic force microscopy for samples grown with different disilane flow rates and the semipolar samples were shown to have smoother surfaces than their polar counterparts, with an approximate 15% reduction in roughness. Optical characterization using cathodoluminescence (CL) spectroscopy allowed analysis of near-band edge emission in the range 4.0–5.4 eV as well as various deep impurity transition peaks in the range 2.7–4.8 eV. The combination of spatially-resolved characterization techniques, including CL and WDX, has provided detailed information on how the crystal growth direction affects the alloy and dopant concentrations.</jats:p

Dielectrophoresis of charged colloidal suspensions

We present a theoretical study of dielectrophoretic (DEP) crossover spectrum of two polarizable particles under the action of a nonuniform AC electric field. For two approaching particles, the mutual polarization interaction yields a change in their respective dipole moments, and hence, in the DEP crossover spectrum. The induced polarization effects are captured by the multiple image method. Using spectral representation theory, an analytic expression for the DEP force is derived. We find that the mutual polarization effects can change the crossover frequency at which the DEP force changes sign. The results are found to be in agreement with recent experimental observation and as they go beyond the standard theory, they help to clarify the important question of the underlying polarization mechanisms

Determining GaN nanowire polarity and its influence on light emission in the scanning electron microscope

The crystal polarity of noncentrosymmetric wurtzite GaN nanowires is determined nondestructively in the scanning electron microscope using electron backscatter diffraction (EBSD). The impact of the nanowire polarity on light emission is then investigated using cathodoluminescence (CL) spectroscopy. EBSD can determine polarity of noncentrosymmetric crystals by interrogating differences in the intensity distribution of bands of the EBSD pattern associated with semipolar planes. Experimental EBSD patterns from an array of GaN nanowires are compared with theoretical patterns produced using dynamical electron simulations to reveal whether they are Ga- or N-polar or, as in several cases, of mixed polarity. CL spectroscopy demonstrates the effect of the polarity on light emission, with spectra obtained from nanowires of known polarity revealing a small but measurable shift (≈28 meV) in the GaN near band edge emission energy between those with Ga and N polarity. We attributed this energy shift to a difference in impurity incorporation in nanowires of different crystal polarity. This approach can be employed to nondestructively identify polarity in a wide range of noncentrosymmetric nanoscale material systems and provide direct comparison with their luminescence