"Pareto Optimal Pro-cyclical Research and Development"

We develop a perfectly competitive endogenous growth model in which R&D is the engine of growth. Our model generates pro-cyclical R&D investment and labor input as a pareto optimal response to technology shocks to the consumption and equipment good sectors. The model also reproduces a variety of facts from the U.S. economy. Growth in R&D capital accounts for 75 percent of the growth rate of GNP and the decline in the relative price of equipment investment. Investment in each sector is pro-cyclical. Our results suggest that equipment shocks may be less important than the previous literature has found. After accounting for the endogenous response of R&D, equipment sector shocks only account for a small fraction of the variance in the growth rate of GNP.

American Judaism: 350 years of an Old Faith in the New World

Celebrating 10 Years of Judaic Studies at Fairfield University. [Followed by] a lecture by the 2004 Judaic Studies Scholar-in-Residence at Fairfield University, Dr. Jonathan D. Sarna, The Joseph H. and Belle R. Braun Professor of American Jewish History, Brandeis University.https://digitalcommons.fairfield.edu/bennettcenter-posters/1234/thumbnail.jp

Semigroup approach to birth-and-death stochastic dynamics in continuum

We describe a general approach to the construction of a state evolution corresponding to the Markov generator of a spatial birth-and-death dynamics in $\mathbb{R}^d$. We present conditions on the birth-and-death intensities which are sufficient for the existence of an evolution as a strongly continuous semigroup in a proper Banach space of correlation functions satisfying the Ruelle bound. The convergence of a Vlasov-type scaling for the corresponding stochastic dynamics is considered.Comment: 35 page

Lake Winona dredging, 1995

Folder of documents concerning master plan for dredging Lake Winona and filling Riverbend Industrial Park, dated March 29, 1995. Also includes handwritten notes on financial/budgeting items, contact information, fill details, and a March 31, 1995 Braun report with discussion about results and reliability. Documents annotated. 8 pages. Part of the Cal R. Fremling Collection.https://openriver.winona.edu/calfremlingpapers/1070/thumbnail.jp

OT 501 Concise and Comprehensive Hebrew 1

Elliger, K., and W. Rudolph. Biblia Hebraica Stuttgartensia. Stuttgart: Deutsche Bibelgesellschaft, 1967-77. Scott, William R. A Simplified Guide to BHS. Berkley, CA: BIBAL, 1987. Brown, Francis, S. R. Driver, and Charles A. Briggs. A Hebrew and English Lexicon of the Old Testament. Oxford: Oxford, 1907; reprint, Peabody, MA: Hendrickson, 1979. Seow, C. L. A Grammar for Biblical Hebrew. Rev ed. Nashville: Abingdon, 1995. Chisholm, Robert. From Exegesis to Exposition. Grand Rapids: Baker, 1998. Braun, Frank X. English Grammar for Language Students. Ann Arbor: Ulrich, 1947.https://place.asburyseminary.edu/syllabi/1689/thumbnail.jp

Columbia Glacier bedrock topography and ice thickness

Columbia Glacier bedrock topography and ice volume. Bedrock topography and ice thickness for 1957 and 2007 on a 100 m grid are provided in NetCDF format, referenced to WGS84 UTM Zone 6N. For details about the method and the datasets used, please see: McNabb, R., Hock, R., O’Neel, S., Rasmussen, L., Ahn, Y., Braun, M., . . . Truffer, M. (2012). Using surface velocities to calculate ice thickness and bed topography: A case study at Columbia Glacier, Alaska, USA. Journal of Glaciology, 58(212), 1151-1164. 10.3189/2012JoG11J24

A Mathematical Model for Epitaxial Semiconductor Crystal Growth from the Vapor Phase on a Masked Substrate

Certain materials used in lasers are made by a process called epitaxial semiconductor crystal growth. In this report a mathematical model is developed for this growth process which occurs on a substrate at the junction between a masked region and exposed substrate in a vapor. This new model consists of two partial differential equations; one for the surface dynamics and one for the crystal growth on the exposed substrate. An analysis of the steady state solutions is furnished. Approximate solutions for time-dependent cases are found using two numerical methods. An asymptotic analysis is also carried out to determine transient solution behavior. The undesireable "bump" structure at the mask/substrate junction which has been observed experimentally is present in the solutions found by each method