Absence of stable atomic structure in fluorinated graphene

Based on the results of first-principles calculations we demonstrate that significant distortion of graphene sheets caused by adsorption of fluorine atoms leads to the formation of metastable patterns for which the next step of fluorination is considerably less energetically favorable. Existence of these stable patterns oriented along the armchair direction makes possible the synthesis of various CFx structures. The combination of strong distortion of the nonfluorinated graphene sheet with the doping caused by the polar nature of C-F bonds reduces the energy cost of migration and the energy of migration barriers, making possible the migration of fluorine atoms on the graphene surface as well as transformation of the shapes of fluorinated areas. The decreasing energy cost of migration with increasing fluorine content also leads to increasing numbers of single fluorine adatoms, which could be the source of magnetic moments.Comment: 16 pages, 6 figures (one figure added), accepted in PCC

Atomic and electronic structure of nitrogen- and boron-doped phosphorene

First principle modeling of nitrogen- and boron-doped phosphorene demonstrates the tendency toward formation of highly ordered structures. Nitrogen doping leads to the formation of -N-P-P-P-N- lines. Further transformation to -P-N-P-N- lines across the chains of phosphorene occurs with increasing band gap and increasing nitrogen concentration, which coincides with the decreasing chemical activity of N-doped phosphorene. In contrast to the case of nitrogen, boron atoms prefer to form -B-B- pairs with the further formation of -P-P-B-B-P-P- patterns along the phosphorene chains. The low concentration of boron dopants converts the phosphorene from a semiconductor into a semimetal with the simultaneous enhancement of its chemical activity. Co-doping of phosphorene by both boron and nitrogen starts from the formation of -B-N- pairs, which provide flat bands and the further transformation of these pairs to hexagonal BN lines and ribbons across the phosphorene chains.Comment: 21 pages, 8 figures, 2 tables, to appear at PCC

Origin of Anomalous Water Permeation through Graphene Oxide Membrane

Water inside the low dimensional carbon structures has been considered seriously owing to fundamental interest in its flow and structures as well as its practical impact. Recently, the anomalous perfect penetration of water through graphene oxide membrane was demonstrated although the membrane was impenetrable for other liquids and even gases. The unusual auxetic behavior of graphene oxide in the presence of water was also reported. Here, based on first-principles calculations, we establish atomistic models for hybrid systems composed of water and graphene oxides revealing the anomalous water behavior inside the stacked graphene oxides. We show that formation of hexagonal ice bilayer in between the flakes as well as melting transition of ice at the edges of flakes are crucial to realize the perfect water permeation across the whole stacked structures. The distance between adjacent layers that can be controlled either by oxygen reduction process or pressure is shown to determine the water flow thus highlighting a unique water dynamics in randomly connected two-dimensional spaces.Comment: 5 pages, 4 figures, to appear in Nano Letter

Inducing and Optimizing Magnetism in Graphene Nanomesh

Using first-principles calculations, we explore the electronic and magnetic properties of graphene nanomesh (GNM), a regular network of large vacancies, produced either by lithography or nanoimprint. When removing an equal number of A and B sites of the graphene bipartite lattice, the nanomesh made mostly of zigzag (armchair) type edges exhibit antiferromagnetic (spin unpolarized) states. In contrast, in situation of sublattice symmetry breaking, stable ferri(o)magnetic states are obtained. For hydrogen-passivated nanomesh, the formation energy is dramatically decreased, and ground state is found to strongly depend on the vacancies shape and size. For triangular shaped holes, the obtained net magnetic moments increase with the number difference of removed A and B sites in agreement with Lieb's theorem for even A+B. For odd A+B triangular meshes and all cases of non-triangular nanomeshes including the one with even A+B, Lieb's theorem does not hold anymore which can be partially attributed to introduction of armchair edges. In addition, large triangular shaped GNM could be as robust as non-triangular GNMs, providing possible solution to overcome one of crucial challenges for the sp-magnetism. Finally, significant exchange splitting values as large as $\sim 0.5$ eV can be obtained for highly asymmetric structures evidencing the potential of GNM for room temperature carbon based spintronics. These results demonstrate that a turn from 0-dimensional graphene nanoflakes throughout 1-dimensional graphene nanoribbons with zigzag edges to GNM breaks localization of unpaired electrons and provides deviation from the rules based on Lieb's theorem. Such delocalization of the electrons leads the switch of the ground state of system from antiferromagnetic narrow gap insulator discussed for graphene nanoribons to ferromagnetic or nonmagnetic metal.Comment: 7 pages, 5 figures, 1 tabl

A Computational Investigation of the Catalytic Properties of Graphene Oxide: Exploring Mechanisms Using DFT Methods

Here we describe a computational study undertaken in an effort to elucidate the reaction mechanisms behind the experimentally observed oxidations and hydrations catalyzed by graphene oxide (GO). Using the oxidation of benzyl alcohol to benzaldehyde as a model reaction, density functional theory (DFT) calculations revealed that this reactivity stemmed from the transfer of hydrogen atoms from the organic molecule to the GO surface. In particular, neighbouring epoxide groups decorating GO's basal plane were ring-opened, resulting in the formation of diols, followed by dehydration. Consistent with the experimentally-observed dependence of this chemistry on molecular oxygen, our calculations revealed that the partially reduced catalyst was able to be recharged by molecular oxygen, allowing for catalyst turnover. Functional group-free carbon materials, such as graphite, were calculated to have substantially higher reaction barriers, indicating that the high chemical potential and rich functionality of GO are necessary for the observed reactivity.Comment: 5 two column pages, 4 figures, stability of reduced graphene oxide also discussed, accepted to ChemCatChe

Direct Experimental Evidence of Metal-Mediated Etching of Suspended Graphene

Atomic resolution high angle annular dark field imaging of suspended, single-layer graphene, onto which the metals Cr, Ti, Pd, Ni, Al and Au atoms had been deposited was carried out in an aberration corrected scanning transmission electron microscope. In combination with electron energy loss spectroscopy, employed to identify individual impurity atoms, it was shown that nano-scale holes were etched into graphene, initiated at sites where single atoms of all the metal species except for gold come into close contact with the graphene. The e-beam scanning process is instrumental in promoting metal atoms from clusters formed during the original metal deposition process onto the clean graphene surface, where they initiate the hole-forming process. Our observations are discussed in the light of calculations in the literature, predicting a much lowered vacancy formation in graphene when metal ad-atoms are present. The requirement and importance of oxygen atoms in this process, although not predicted by such previous calculations, is also discussed, following our observations of hole formation in pristine graphene in the presence of Si-impurity atoms, supported by new calculations which predict a dramatic decrease of the vacancy formation energy, when SiOx molecules are present.Comment: final version accepted in ACS Nano + supplementary info. 22+6 pages, 4+5 figure

Charge Transfer Induced Molecular Hole Doping into Thin Film of Metal-Organic-Frameworks

Despite the highly porous nature with significantly large surface area, metal organic frameworks (MOFs) can be hardly used in electronic, and optoelectronic devices due to their extremely poor electrical conductivity. Therefore, the study of MOF thin films that require electron transport or conductivity in combination with the everlasting porosity is highly desirable. In the present work, thin films of Co3(NDC)3DMF4 MOFs with improved electronic conductivity are synthesized using layer-by-layer and doctor blade coating techniques followed by iodine doping. The as-prepared and doped films are characterized using FE-SEM, EDX, UV/Visible spectroscopy, XPS, current-voltage measurement, photoluminescence spectroscopy, cyclic voltammetry, and incident photon to current efficiency measurements. In addition, the electronic and semiconductor property of the MOF films are characterized using Hall Effect measurement, which reveals that in contrast to the insulator behavior of the as-prepared MOFs, the iodine doped MOFs behave as a p-type semiconductor. This is caused by charge transfer induced hole doping into the frameworks. The observed charge transfer induced hole doping phenomenon is also confirmed by calculating the densities of states of the as-prepared and iodine doped MOFs based on density functional theory. Photoluminescence spectroscopy demonstrate an efficient interfacial charge transfer between TiO2 and iodine doped MOFs, which can be applied to harvest solar radiations.Comment: Main paper (19 pages, 6 figures) and supplementary information (15 pages, 10 figures), accepted in ACS Appl. Materials & Interface