158 research outputs found
The Matsumoto and Yor process and infinite dimensional hyperbolic space
The Matsumoto\,--Yor process is , where
is a Brownian motion. It is shown that it is the limit of the radial
part of the Brownian motion at the bottom of the spectrum on the hyperbolic
space of dimension , when tends to infinity. Analogous processes on
infinite series of non compact symmetric spaces and on regular trees are
described.Comment: 3
Littelmann paths and brownian paths
We study some path transformations related to Littelmann path model and their
applications to representation theory and Brownian motion in a Weyl chamber.Comment: 30 pages, 1 figur
Pitman transforms and Brownian motion in the interval viewed as an affine alcove
Pitman's theorem states that if {Bt, t 0} is a one-dimensional Brownian
motion, then {Bt -- 2 inf st Bs, t 0} is a three dimensional Bessel
process, i.e. a Brownian motion conditioned in Doob sense to remain forever
positive. In this paper one gives a similar representation for the Brownian
motion in an interval. Due to the double barrier, it is much more involved and
only asymptotic. This uses the fact that the interval is an alcove of the
Affine Lie algebra A 1 1
Comportement asymptotique des puissances de convolution d'une probabilité sur un espace symétrique
On the existence of some ARCH() processes
A new sufficient condition for the existence of a stationary causal solution
of an ARCH() equation is provided. This condition allows to consider
polynomially decaying coefficients, so that it can be applied to the so-called
FIGARCH processes, whose existence is thus proved
Photon correlation spectroscopy on a single quantum dot embedded in a nanowire
We have observed strong photoluminescence from a single CdSe quantum dot
embedded in a ZnSe nanowire. Exciton, biexciton and charged exciton lines have
been identified unambiguously using photon correlation spectroscopy. This
technique has provided a detailed picture of the dynamics of this new system.
This type of semi conducting quantum dot turns out to be a very efficient
single photon source in the visible. Its particular growth technique opens new
possibilities as compared to the usual self-asssembled quantum dots
Dark exciton optical spectroscopy of a semiconducting quantum dot embedded in a nanowire
Photoluminescence of a single CdSe quantum dot embedded in a ZnSe nanowire has been investigated. It has been found that the dark exciton has a strong influence on the optical properties. The most visible influence is the strongly reduced excitonic emission compared to the biexcitonic one. Temperature dependent lifetime measurements have allowed us to measure a large splitting of meV between the dark and the bright exciton as well as the spin flip rates between these two states
Extraction of the homogeneous linewidth of the spectrally diffusing line of a CdSe/ZnSe quantum dot embedded in a nanowire
International audienceWe present a simple method to extract the homogeneous linewidth of a single photon emitter line exhibiting fast (down to 1 ns) spectral diffusion (SD). It is based on a recently developed technique using photon correlation measurements on half of the line. Here we show that the SD induced bunching depends on the ratio between the width of the homogeneous line and the spectral diffusion amplitude. Using this technique on a CdSe/ZnSe quantum dot, we investigate the temperature dependence of its fast SD amplitude and its homogeneous excitonic linewidt
Insertion of CdSe quantum dots in ZnSe nanowires: Correlation of structural and chemical characterization with photoluminescence
International audienceZnSe nanowires with CdSe quantum dot insertions were grown by molecular beam epitaxy using gold as a catalyst. Structural, chemical, and optical properties of the wires and quantum dots were characterized using electron microscopy and photoluminescence spectroscopy. We determined the crystalline structure, the chemical composition, and the size of the quantum dot and established a correlation between quantum dot size and luminescence. As expected, a blueshift of the luminescence was observed for decreasing quantum dot size. The comparison of calculated photoluminescence energy and experimental data seems to indicate that the quantum dots consist of a ZnxCd1-xSe ternary alloy rather than pure CdSe
Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis
International audienceZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111] oriented cubic mixed with [0001] oriented hexagonal regions are obtained on (111)B substrates. Most of the NWs are perpendicular to the surface in the last case. CdSe quantum dots were successfully incorporated in the ZnSe NWs as demonstrated by transmission electron microscopy, energy filtered TEM and high angle annular dark field scanning TEM measurements
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