Excitonic properties of strained wurtzite and zinc-blende GaN/Al(x)Ga(1-x)N quantum dots

We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite (WZ) and zinc-blende (ZB) crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conduction and valence band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it has a smaller effect on WZ GaN/AlGaN, and very little effect on ZB GaN/AlN quantum dots. As a result, the exciton ground state energy in WZ GaN/AlN quantum dots, with heights larger than 3 nm, exhibits a red shift with respect to the bulk WZ GaN energy gap. The radiative decay time of the red-shifted transitions is large and increases almost exponentially from 6.6 ns for quantum dots with height 3 nm to 1100 ns for the quantum dots with height 4.5 nm. In WZ GaN/AlGaN quantum dots, both the radiative decay time and its increase with quantum dot height are smaller than those in WZ GaN/AlN quantum dots. On the other hand, the radiative decay time in ZB GaN/AlN quantum dots is of the order of 0.3 ns, and is almost independent of the quantum dot height. Our results are in good agreement with available experimental data and can be used to optimize GaN quantum dot parameters for proposed optoelectronic applications.Comment: 18 pages, accepted for publication in the Journal of Applied Physic

Quantum interference in nanofractals and its optical manifestation

We consider quantum interferences of ballistic electrons propagating inside fractal structures with nanometric size of their arms. We use a scaling argument to calculate the density of states of free electrons confined in a simple model fractal. We show how the fractal dimension governs the density of states and optical properties of fractal structures in the RF-IR region. We discuss the effect of disorder on the density of states along with the possibility of experimental observation.Comment: 19 pages, 6 figure

Plasma synthesis of single crystal silicon nanoparticles for novel electronic device applications

Single-crystal nanoparticles of silicon, several tens of nm in diameter, may be suitable as building blocks for single-nanoparticle electronic devices. Previous studies of nanoparticles produced in low-pressure plasmas have demonstrated the synthesis nanocrystals of 2-10 nm diameter but larger particles were amorphous or polycrystalline. This work reports the use of a constricted, filamentary capacitively coupled low-pressure plasma to produce single-crystal silicon nanoparticles with diameters between 20-80 nm. Particles are highly oriented with predominant cubic shape. The particle size distribution is rather monodisperse. Electron microscopy studies confirm that the nanoparticles are highly oriented diamond-cubic silicon.Comment: accepted for publication in Plasma Physics and Controlled Fusion, scheduled for Dec. 2004 F

Tuning the energetics and tailoring the optical properties of silver clusters confined in zeolites

The integration of metal atoms and clusters in well-defined dielectric cavities is a powerful strategy to impart new properties to them that depend on the size and geometry of the confined space as well as on metal-host electrostatic interactions. Here, we unravel the dependence of the electronic properties of metal clusters on space confinement by studying the ionization potential of silver clusters embedded in four different zeolite environments over a range of silver concentrations. Extensive characterization reveals a strong influence of silver loading and host environment on the cluster ionization potential, which is also correlated to the cluster's optical and structural properties. Through fine-tuning of the zeolite host environment, we demonstrate photoluminescence quantum yields approaching unity. This work extends our understanding of structure property relationships of small metal clusters and applies this understanding to develop highly photoluminescent materials with potential applications in optoelectronics and bioimaging

Factors Associated with Revision Surgery after Internal Fixation of Hip Fractures

Background: Femoral neck fractures are associated with high rates of revision surgery after management with internal fixation. Using data from the Fixation using Alternative Implants for the Treatment of Hip fractures (FAITH) trial evaluating methods of internal fixation in patients with femoral neck fractures, we investigated associations between baseline and surgical factors and the need for revision surgery to promote healing, relieve pain, treat infection or improve function over 24 months postsurgery. Additionally, we investigated factors associated with (1) hardware removal and (2) implant exchange from cancellous screws (CS) or sliding hip screw (SHS) to total hip arthroplasty, hemiarthroplasty, or another internal fixation device. Methods: We identified 15 potential factors a priori that may be associated with revision surgery, 7 with hardware removal, and 14 with implant exchange. We used multivariable Cox proportional hazards analyses in our investigation. Results: Factors associated with increased risk of revision surgery included: female sex, [hazard ratio (HR) 1.79, 95% confidence interval (CI) 1.25-2.50; P = 0.001], higher body mass index (fo

Optical spectra of silicon nanostructures from the random-matrix model

We apply the method of random matrices to a calculation of the optical properties of porous silicon and silicon nanopowders, analyzing the effects of disorder on the visible luminescence properties. The maximum of the luminescence peal; displays a blueshift, which adds up to the effects induced by other mechanisms, such as quantum confinement or surface passivation, and agrees with the experimental findings, The long-wavelength luminescence edge, instead, is redshifted by the presence of disorder, thus partially compensating for the gap-opening effect induced by the other mechanisms

Si-based Nanoparticles: a biocompatibility study

International audienceExposure to silicon nanoparticles (Si-NPs) may occur in professional working conditions or for people undergoing a diagnostic screening test. Despite the fact that silicon is known as a non-toxic material, in the first case the risk is mostly related to the inhalation of nanoparticles, thus the most likely route of entry is across the lung alveolar epithelium. In the case of diagnostic imaging, nanoparticles are usually injected intravenously and Si-NPs could impact on the endothelial wall. In our study we investigated the interaction between selected Si-based NPs and an epithelial lung cell line. Our data showed that, despite the overall silicon biocompatibility, however accurate studies of the potential toxicity induced by the nanostructure and engineered surface characteristics need to be accurately investigated before Si nanoparticles can be safely used for in vivo applications as bio-imaging, cell staining and drug delivery

On the role of non-bridging oxygen centers in the red luminescence emission from silicon nanocrystals

The process responsible for visible-near infrared luminescence emission in Si nanostructures has been generating significant controversy for years. The debate has focused on whether light emission is originated by recombination of quantum confined excitons or by defects located at the surface. It is experimentally difficult to distinguish the two contributions since both are size-dependent. Moreover, all the studies were performed on different systems and consequently the comparisons were not free from ambiguities. Here we relate the spectroscopic properties of pyrolytic Si nanocrystals, aged in air, and after complete conversion to amorphous silica by alkali etching-assisted oxidation. The strong resemblance of the spectral and time decay behavior of the red PL emission in both systems (surface oxidized nanocrystalline Si and amorphous silica sample) indicates that this emission is dominated by defects in the silicon oxide. The strongly non-exponential time behavior of the photo-luminescence emission in both systems can be modeled as the sum of exponential decays from the emitting defects, thus ruling out the interpretation in terms of the so-called "stretched exponential" decay. Using this model we also obtained the emission energy and inhomogeneous linewidth of the luminescent defects, allowing us to identify them as the non-bridging oxygen hole centers. The emission energy of these defects depends strongly on their physical and chemical environment and can produce a shift apparently due to the size effect