Increase in transmitted resistance to non-nucleoside reverse transcriptase inhibitors among newly diagnosed HIV-1 infections in Europe

Matti A Ristola on SPREAD Programme -työryhmän jäsen.Peer reviewe

CVD CARBONYL THIN FILMS OF TUNGSTEN AND MOLYBDENUM AND THEIR SILICIDES - A GOOD ALTERNATIVE TO CVD FLUORIDE TUNGSTEN TECHNOLOGY

By thermal decomposition of W(CO)6 and Mo(CO)6 at temperatures below 400°C and atmospheric pressure thin films on Si wafers were grown. This technology ia shown to be an alternative to the fluotide one which uses WF6 as a source material. Low resistivities together with a lack of errosion of Si substrate are possible. As-deposited films contain considerable amount of carbon and oxygen. By proper thermal annealing in H2 atmosphere as well as by rapid thermal annealing in vacuum optimum conditions were found to obtain low resistive metal and metal silicides films. Auger electron spectroscopy and XRD-studies were used to show the connection between the chemical composition and structure of the two kinds of films on the one hand and their resistivities on the other

Properties of µPCVD poly-silicon films after rapid thermal annealing

Polly-Silicon Films obtained by µPCVD were studied with respect to their structural and electrical properties influenced by rapid thermal annealing (RTA) in vacuum. In addition an annealing in H2 atmosphere at atmospheric pressure was curried out. The structure and the morphology of the films were studied by Reflection High Energy Electron Diffraction (RHEED) technique and Scanning Electron Microscopy (SEM), respectively. An effect of increase of the crystallinity of the poly-Si films was observed as a result of RTA annealing. These observations coincide well with the measured sheet resistance of the layers. It was found that sheet resistance of the as-deposited films is about [MATH] and it decreases to a value of about [MATH] in dependence on the annealing

Low pressure chemical vapour deposition of CNx layers by interaction between tetramethylguanidine and cyanurchloride

Possibilities are demonstrated for synthesis of CNx layers in a LPCVD reactor, using liquid and solid state source organic compounds. The influence of pressure and deposition temperature on the composition, structure and physico-chemical properties of the films is investigated. It is found that at a temperature range of 400 +600 °C, the layers obtained are transparent, colored on silicon, with good adhesion, homogeneous in morphology and uniform in thickness. Peculiar features of coatings are their amorphous nature, nitrogen to carbon relation 0.76 as well as possible hydrogen incorporation

Investigation of modified thin SnO2 layers treated by rapid thermal annealing by means of hollow cathode spectroscopy and AFM technique

By means of hollow cathode spectroscopy and atomic force microscopy the surface morphology and composition of SnO2 thin film, modified with hexamethyldisilazane after rapid thermal annealing treatment (800-1200 degrees C), are investigated. Formation of crystalline structure is suggested at lower temperatures. Depolimerization, destruction and dehydration are developed at temperatures of 1200 degrees C. It is shown that the rapid thermal annealing treatment could modify both the surface morphology and the composition of the layer, thus changing the adsorption ability of the sensing layer. The results confirm the ability of hollow cathode emission spectroscopy for depth profiling of new materials especially combined with standard techniques