Influence of Light Soaking on Silicon Heterojunction Solar Cells With Various Architectures

In this article, we investigate the effect of prolonged light exposure on silicon heterojunction solar cells. We show that, although light exposure systematicallyimproves solar cell efficiency in the case of devices using intrinsic and p-type layers with optimal thickness, this treatment leads to performance degradation for devices with an insufficiently thick (p) layer on the light-incoming side. Our results indicate that this degradation is caused by a diminution of the (i/p)-layer stack hole-selectivity because of light exposure. Degradation is avoided when a sufficiently thick (p) layer is used, or when exposure of the (p) layer to UV light is avoided, as is the case of the rear-junction configuration, commonly used in the industry. Additionally, applying a forward bias current or an infrared light exposure results in an efficiency increase for all investigated solar cells, independently of the (p)-layer thickness, confirming the beneficial influence of recombination on the performance of silicon heterojunction solar cells

Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

We analyze the optical losses that occur in interdigitated back-contacted amorphous/crystalline silicon heterojunction solar cells. We show that in our devices, the main loss mechanisms are similar to those of two-side contacted heterojunction solar cells. These include reflection and escape-light losses, as well as parasitic absorption in the front passivation layers and rear contact stacks. We then provide practical guidelines to mitigate such reflection and parasitic absorption losses at the front side of our solar cells, aiming at increasing the short-circuit current density in actual devices. Applying these rules, we processed a back-contacted silicon heterojunction solar cell featuring a short-circuit current density of 40.9 mA/cm(2) and a conversion efficiency of 22.0%. Finally, we show that further progress will require addressing the optical losses occurring at the rear electrodes of the back-contacted devices

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

We report on the fabrication of back-contacted silicon heterojunction solar cells with conversion efficiencies above 21%. Our process technology relies solely on simple and size-scalable patterning methods, with no high-temperature steps. Using in situ shadow masks, doped hydrogenated amorphous silicon layers are patterned into two interdigitated combs. Transparent conductive oxide and metal layers, forming the back electrodes, are patterned by hot melt inkjet printing. With this process, we obtain high short-circuit current densities close to 40 mA/cm2 and open-circuit voltages exceeding 720 mV, leading to a conversion efficiency of 21.5%. However, moderate fill factor values limit our current device efficiencies. Unhindered carrier transport through both heterocontact layer stacks, as well as higher passivation quality over the minority carrier-injection range relevant for solar cell operation, are identified as key factors for improved fill factor values and device performance

Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. Based on our findings, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells

Efficient Near-Infrared-Transparent Perovskite Solar Cells Enabling Direct Comparison of 4-Terminal and Monolithic Perovskite/Silicon Tandem Cells

Combining market-proven silicon solar cell technology with an efficient wide band gap top cell into a tandem device is an attractive approach to reduce the cost of photovoltaic systems. For this, perovskite solar cells are promising high-efficiency top cell candidates, but their typical device size (<0.2 cm2), is still far from standard industrial sizes. We present a1cm2 near-infrared transparent perovskite solar cell with 14.5% steady- state efficiency, as compared to 16.4% on 0.25 cm2. By mechanically stacking these cells with silicon heterojunction cells, we experimentally demonstrate a 4-terminal tandem measurement with a steady-state efficiency of 25.2%, with a 0.25 cm2 top cell. The developed top cell processing methods enable the fabrication of a 20.5% efficient and 1.43 cm2 large monolithic perovskite/silicon heterojunction tandem solar cell, featuring a rear-side textured bottom cell to increase its near-infrared spectral response. Finally, we compare both tandem configurations to identify efficiency-limiting factors and discuss the potential for further performance improvement

Fully textured monolithic perovskite/silicon tandem solar cells with 25.2% power conversion efficiency

Tandem devices combining perovskite and silicon solar cells are promising candidates to achieve power conversion efficiencies above 30% at reasonable costs. State-of-the-art monolithic two-terminal perovskite/silicon tandem devices have so far featured silicon bottom cells that are polished on their front side to be compatible with the perovskite fabrication process. This concession leads to higher potential production costs, higher reflection losses and non-ideal light trapping. To tackle this issue, we developed a top cell deposition process that achieves the conformal growth of multiple compounds with controlled optoelectronic properties directly on the micrometre-sized pyramids of textured monocrystalline silicon. Tandem devices featuring a silicon heterojunction cell and a nanocrystalline silicon recombination junction demonstrate a certified steady-state efficiency of 25.2%. Our optical design yields a current density of 19.5 mA cm−2 thanks to the silicon pyramidal texture and suggests a path for the realization of 30% monolithic

Laser doping and laser annealing for crystalline silicon solar cells processing

Cette thèse se propose d’étudier les procédés de dopage et de recuit laser comme outils permettant la réalisation de cellules photovoltaïques au silicium cristallin. Des émetteurs dopés ou recuits par laser sont tout d’abord réalisés à l’aide de trois lasers et de différentes sources dopantes. Les lasers utilisés sont un laser vert nanoseconde, un laser excimère et un laser ultraviolet à haute cadence. Comme sources dopantes nous avons utilisé le verre de phosphore, des couches de nitrures de silicium dopées au bore ou au phosphore, ou encore des implantations ioniques de bore ou de phosphore. Des dopages très efficaces sont obtenus avec chaque couple laser/source dopante. En particulier, de faibles valeurs de résistances carrées et de densités de courant de saturation sont obtenues. Ces procédés laser sont ensuite appliqués à la réalisation de cellules à émetteur sélectif et à champ arrière au bore. Les cellules à émetteur sélectif dopé par laser (en utilisant le verre de phosphore comme source dopante) atteignent un rendement de 18,3 %, ce qui représente un gain total de 0,6 %abs comparé aux cellules standard à émetteur homogène. Les cellules à champ arrière au bore recuit par laser (à partir d’une implantation ionique de bore) montrent quant à elles un gain de 0,3 %abs par rapport aux cellules à champ arrière à l’aluminium, offrant ainsi un rendement de 16,7 %.This study aims at investigating laser doping and laser annealing for crystalline silicon solar cells processing. Laser-processed emitters are firstly realized using three lasers and different dopants sources. The lasers are a nanosecond green laser, an excimer laser and a high-frequency ultraviolet laser. As dopants sources we used either phosphosilicate glass, phosphorus and boron-doped silicon nitrides, or phosphorus and boron ion implantation. Efficient phosphorus and boron doping are obtained using any of these laser/sources couple. In particular, low sheet resistances and low emitter saturation current densities are obtained. These laser processes are then applied to selective emitter and boron back-surface-field solar cells. Laser-doped selective emitter solar cells (using phosphosilicate glass as a dopants source) reach 18.3 % efficiency. This represents an overall gain of 0.6 %abs when compared to standard homogeneous emitter. On the other hand, laserannealed boron back-surface-field solar cells (using implanted boron as a dopants source) feature an overall gain of 0.3 %abs when compared to standard aluminium back-surface-field solar cells, thus yielding an efficiency of 16.7 %

Laser doping and laser annealing for crystalline silicon solar cells processing

Cette thèse se propose d’étudier les procédés de dopage et de recuit laser comme outils permettant la réalisation de cellules photovoltaïques au silicium cristallin. Des émetteurs dopés ou recuits par laser sont tout d’abord réalisés à l’aide de trois lasers et de différentes sources dopantes. Les lasers utilisés sont un laser vert nanoseconde, un laser excimère et un laser ultraviolet à haute cadence. Comme sources dopantes nous avons utilisé le verre de phosphore, des couches de nitrures de silicium dopées au bore ou au phosphore, ou encore des implantations ioniques de bore ou de phosphore. Des dopages très efficaces sont obtenus avec chaque couple laser/source dopante. En particulier, de faibles valeurs de résistances carrées et de densités de courant de saturation sont obtenues. Ces procédés laser sont ensuite appliqués à la réalisation de cellules à émetteur sélectif et à champ arrière au bore. Les cellules à émetteur sélectif dopé par laser (en utilisant le verre de phosphore comme source dopante) atteignent un rendement de 18,3 %, ce qui représente un gain total de 0,6 %abs comparé aux cellules standard à émetteur homogène. Les cellules à champ arrière au bore recuit par laser (à partir d’une implantation ionique de bore) montrent quant à elles un gain de 0,3 %abs par rapport aux cellules à champ arrière à l’aluminium, offrant ainsi un rendement de 16,7 %.This study aims at investigating laser doping and laser annealing for crystalline silicon solar cells processing. Laser-processed emitters are firstly realized using three lasers and different dopants sources. The lasers are a nanosecond green laser, an excimer laser and a high-frequency ultraviolet laser. As dopants sources we used either phosphosilicate glass, phosphorus and boron-doped silicon nitrides, or phosphorus and boron ion implantation. Efficient phosphorus and boron doping are obtained using any of these laser/sources couple. In particular, low sheet resistances and low emitter saturation current densities are obtained. These laser processes are then applied to selective emitter and boron back-surface-field solar cells. Laser-doped selective emitter solar cells (using phosphosilicate glass as a dopants source) reach 18.3 % efficiency. This represents an overall gain of 0.6 %abs when compared to standard homogeneous emitter. On the other hand, laserannealed boron back-surface-field solar cells (using implanted boron as a dopants source) feature an overall gain of 0.3 %abs when compared to standard aluminium back-surface-field solar cells, thus yielding an efficiency of 16.7 %

Procédés de dopage et de recuit laser pour la réalisation de cellules photovoltaïques au silicium cristallin

This study aims at investigating laser doping and laser annealing for crystalline silicon solar cells processing. Laser-processed emitters are firstly realized using three lasers and different dopants sources. The lasers are a nanosecond green laser, an excimer laser and a high-frequency ultraviolet laser. As dopants sources we used either phosphosilicate glass, phosphorus and boron-doped silicon nitrides, or phosphorus and boron ion implantation. Efficient phosphorus and boron doping are obtained using any of these laser/sources couple. In particular, low sheet resistances and low emitter saturation current densities are obtained. These laser processes are then applied to selective emitter and boron back-surface-field solar cells. Laser-doped selective emitter solar cells (using phosphosilicate glass as a dopants source) reach 18.3 % efficiency. This represents an overall gain of 0.6 %abs when compared to standard homogeneous emitter. On the other hand, laserannealed boron back-surface-field solar cells (using implanted boron as a dopants source) feature an overall gain of 0.3 %abs when compared to standard aluminium back-surface-field solar cells, thus yielding an efficiency of 16.7 %.Cette thèse se propose d’étudier les procédés de dopage et de recuit laser comme outils permettant la réalisation de cellules photovoltaïques au silicium cristallin. Des émetteurs dopés ou recuits par laser sont tout d’abord réalisés à l’aide de trois lasers et de différentes sources dopantes. Les lasers utilisés sont un laser vert nanoseconde, un laser excimère et un laser ultraviolet à haute cadence. Comme sources dopantes nous avons utilisé le verre de phosphore, des couches de nitrures de silicium dopées au bore ou au phosphore, ou encore des implantations ioniques de bore ou de phosphore. Des dopages très efficaces sont obtenus avec chaque couple laser/source dopante. En particulier, de faibles valeurs de résistances carrées et de densités de courant de saturation sont obtenues. Ces procédés laser sont ensuite appliqués à la réalisation de cellules à émetteur sélectif et à champ arrière au bore. Les cellules à émetteur sélectif dopé par laser (en utilisant le verre de phosphore comme source dopante) atteignent un rendement de 18,3 %, ce qui représente un gain total de 0,6 %abs comparé aux cellules standard à émetteur homogène. Les cellules à champ arrière au bore recuit par laser (à partir d’une implantation ionique de bore) montrent quant à elles un gain de 0,3 %abs par rapport aux cellules à champ arrière à l’aluminium, offrant ainsi un rendement de 16,7 %

22% efficient dopant-free interdigitated back contact silicon solar cells

In this study, we present dopant-free back contact heterojunction silicon solar cells employing MoOx and MgFx based stacks as hole-and electron-selective contacts deposited using a thermal evaporation process at low temperature. Only two masking steps and one alignment are required in this simple process flow. We investigate the effect of varying the MgFx film thickness as the electron contact layer on the rear side on IBC Si solar cells and define an optimal thickness 1.5 nm of MgFx for high V-OC and FF. We compare different electron-selective contact materials including Mg-based and fluoride materials and discuss the suitable combinations. We fabricate dopant-free back contact solar cells by applying a stack of 1.5 nm MgF2/70 nm Al/800 nm Ag films on intrinsic a-Si: H, maintaining excellent passivation and show efficient carrier extraction. A 4.5-cm(2) dopant-free back contact solar cells fabricated with these layers enables high V-OC up to 709 mV and FF up to 75.6% still limited by series resistance due to too thin metal layers, a pseudo FF of 84.2% is yet measured. The cell exhibits very low front reflection and has outstanding collection efficiency, the IQE reach 98.2% - 99% ranging from 600 to 900-nm due to low recombination of MoOx and MgFx contacts results in a high JSC of 41.5 mA/cm(2)