Si3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation

A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions

Coherent and incoherent bands in La and Rh doped Sr3Ir2O7

In Sr2IrO4 and Sr3Ir2O7, correlations, magnetism and spin-orbit coupling compete on similar energy scales, creating a new context to study metal-insulator transitions (MIT). We use here Angle-Resolved photoemission to investigate the MIT as a function of hole and electron doping in Sr3Ir2O7, obtained respectively by Ir/Rh and Sr/La substitutions. We show that there is a clear reduction as a function of doping of the gap between a lower and upper band on both sides of the Fermi level, from 0.2eV to 0.05eV. Although these two bands have a counterpart in band structure calculations, they are characterized by a very different degree of coherence. The upper band exhibits clear quasiparticle peaks, while the lower band is very broad and loses weight as a function of doping. Moreover, their ARPES spectral weights obey different periodicities, reinforcing the idea of their different nature. We argue that a very similar situation occurs in Sr2IrO4 and conclude that the physics of the two families is essentially the same

Giant Anisotropy of Spin-Orbit Splitting at the Bismuth Surface

We investigate the bismuth (111) surface by means of time and angle resolved photoelectron spectroscopy. The parallel detection of the surface states below and above the Fermi level reveals a giant anisotropy of the Spin-Orbit (SO) spitting. These strong deviations from the Rashba-like coupling cannot be treated in $\textbf{k}\cdot \textbf{p}$ perturbation theory. Instead, first principle calculations could accurately reproduce the experimental dispersion of the electronic states. Our analysis shows that the giant anisotropy of the SO splitting is due to a large out-of plane buckling of the spin and orbital texture.Comment: 5 pages, 4 figure

Communication: UV photoionization of cytosine catalyzed by Ag+

The photo-induced damages of DNA in interaction with metal cations, which are found in various environments, still remain to be characterized. In this paper, we show how the complexation of a DNA base (cytosine (Cyt)) with a metal cation (Ag+) changes its electronic properties. By means of UV photofragment spectroscopy of cold ions, it was found that the photoexcitation of the CytAg+ complex at low energy (315-282) nm efficiently leads to ionized cytosine (Cyt+) as the single product. This occurs through a charge transfer state in which an electron from the p orbital of Cyt is promoted to Ag+, as confirmed by ab initio calculations at the TD-DFT/B3LYP and RI-ADC(2) theory level using the SV(P) basis set. The low ionization energy of Cyt in the presence of Ag+ could have important implications as point mutation of DNA upon sunlight exposition.Fil: Taccone, Martín Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaFil: Féraud, Geraldine. Aix Marseille Université. Physique des Interactions Ioniques et Moléculaires; FranciaFil: Berdakin, Matias. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaFil: Dedonder Lardeux, Claude. Aix Marseille Université. Physique des Interactions Ioniques et Moléculaires; FranciaFil: Jouvet, Christophe. Physique des Interactions Ioniques et Moléculaires; FranciaFil: Pino, Gustavo Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentin

El tèxtil a Mollet. Orígens i singularitats

Introducció a les Jornades de la Indústria tèxtil a Mollet on es repassa el procés d’industrialització del país amb l’evolució de la indústria tèxtil i els can· vis que va aportar a la societat en els seus inicis, així com les diverses etapes fins a la situació actual

Numerical procedures for the calculation of the stresses in monocoques III : calculation of the bending moments in fuselage frames

This report deals with the calculation of the bending moments in and the distortions of fuselage rings upon which known concentrated and distributed loads are acting. In the procedure suggested, the ring is divided into a number of beams each having a constant radius of curvature. The forces and moments caused in the end sections of the beams by individual unit displacements of the end sections are listed in a table designated as the operations table in conformity with Southwell's nomenclature. The operations table and the external loads are equivalent to a set of linear equations. For their solution the following three procedures are presented: 1) Southwell's method of systematic relaxations. This is a step-by-step approximation procedure guided by the physical interpretation of the changes in the values of the unknown. 2) The growing unit procedure in which the individual beams are combined successively into beams of increasing length until finally the entire ring becomes a single beam. In each step of the procedure a set of not more than three simultaneous linear equations is solved. 3) Solution of the entire set of simultaneous equations by the methods of the matrix calculus. In order to demonstrate the manner in which the calculations may be carried out, the following numerical examples are worked out: 1) Curved beam with both its end sections rigidly fixed. The load is a concentrated force. 2) Egg-shape ring with symmetric concentrated loads. 3) Circular ring with antisymmetric concentrated loads and shear flow (torsion of the fuselage). 4) Same with V-braces incorporated in the ring. 5) Egg-shape ring with antisymmetric concentrated loads and shear flow (torsion of the fuselage). 6) Same with V-braces incorporated in the ring. The results of these calculations are checked, whenever possible, by calculations carried out according to known methods of analysis. The agreement is found to be good. The amount of work necessary for the solution of ring problems by the methods described in the present report is practically independent of the degree of redundancy of the structure. For this reason the methods are recommended for use particularly in problems of rings having one or more internal bracing elements

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphene's electronic structure and opens a new direction in graphene electronics research.Comment: 11 pages, 7 figure

Transfer of spectral weight across the gap of Sr2IrO4 induced by La doping

We study with Angle Resolved PhotoElectron Spectroscopy (ARPES) the evolution of the electronic structure of Sr2IrO4, when holes or electrons are introduced, through Rh or La substitutions. At low dopings, the added carriers occupy the first available states, at bottom or top of the gap, revealing an anisotropic gap of 0.7eV in good agreement with STM measurements. At further doping, we observe a reduction of the gap and a transfer of spectral weight across the gap, although the quasiparticle weight remains very small. We discuss the origin of the in-gap spectral weight as a local distribution of gap values