Photoperiod affects the phenotype of mitochondrial complex I mutants

Plant mutants for genes encoding subunits of mitochondrial Complex I (CI, NADH:ubiquinone oxidoreductase), the first enzyme of the respiratory chain, display various phenotypes depending on growth conditions. Here, we examined the impact of photoperiod, a major environmental factor controlling plant development, on two Arabidopsis thaliana CI mutants: a new insertion mutant interrupted in both ndufs8.1 and ndufs8.2 genes encoding the NDUFS8 subunit, and the previously characterized ndufs4 CI mutant. In long day (LD) condition, both ndufs8.1 and ndufs8.2 single mutants were indistinguishable from Col-0 at phenotypic and biochemical levels, whereas the ndufs8.1 ndufs8.2 double mutant was devoid of detectable holo-CI assembly/activity, showed higher AOX content/activity and displayed a growth-retardation phenotype similar to that of the ndufs4 mutant. Although growth was more affected in ndufs4 than ndufs8.1 ndufs8.2 under short day (SD) condition, both mutants displayed a similar impairment of growth acceleration after transfer to LD as compared to the WT. Untargeted and targeted metabolomics showed that overall metabolism was less responsive to the SD-to-LD transition in mutants than in the WT. The typical LD acclimation of carbon, nitrogen-assimilation and redox-related parameters was not observed in ndufs8.1 ndufs8. Similarly, NAD(H) content, that was higher in SD condition in both mutants than in Col-0, did not adjust under LD. We propose that altered redox homeostasis and NAD(H) content/redox state control the phenotype of Complex I mutants and photoperiod acclimation in Arabidopsis

Software countermeasures for control flow integrity of smart card C codes

International audienceFault attacks can target smart card programs in order to disrupt an execution and gain an advantage over the data or the embedded functionalities. Among all possible attacks, control flow attacks aim at disrupting the normal execution flow. Identifying harmful control flow attacks as well as designing countermeasures at software level are tedious and tricky for developers. In this paper, we propose a methodology to detect harmful intra-procedural jump attacks at source code level and to automatically inject formally-proven countermeasures. The proposed software countermeasures defeat 100% of attacks that jump over at least two C source code statements or beyond. Experiments show that the resulting code is also hardened against unexpected function calls and jump attacks at assembly level

Deposition of thin films TiO2 by atmospheric plasma post-discharge assisted injection MOCVD

TiO2 thin films have been deposited at low temperature using a new atmospheric pressure deposition process, which combines remote Atmospheric Pressure (AP) Plasma with Pulsed Injection Metallorganic Chemical Vapour Deposition (PIMOCVD). The effects of post-discharge plasma and deposition parameters have been studied with respect to the deposition kinetics, morphology, and microstructure of TiO2 films. It is shown that well-crystallised TiO2 anatase films can be obtained at a temperature of only 275 °C

Deposition of thin films TiO2 by atmospheric plasma post-discharge assisted injection MOCVD

TiO2 thin films have been deposited at low temperature using a new atmospheric pressure deposition process, which combines remote Atmospheric Pressure (AP) Plasma with Pulsed Injection Metallorganic Chemical Vapour Deposition (PIMOCVD). The effects of post-discharge plasma and deposition parameters have been studied with respect to the deposition kinetics, morphology, and microstructure of TiO2 films. It is shown that well-crystallised TiO2 anatase films can be obtained at a temperature of only 275 °C