Local characterization of the optical properties of annealed Au films on glass substrates

We present scanning near field microscopy and local spectroscopic characterisation of gold nanoparticles fabricated on glass sodalime cover slides. The nanoislands are fabricated by the thermal annealing of gold thin films. Results are presented for samples annealed at 300 °C, 400 °C, and 500 °C. We study the spectral dependence of the transmittance at the nanoscale level with respect to the nanoislands size, shape, and interparticle distance employing a Scanning Near-field Optical Microscopy

Porous silica-pillared MXenes with controllable interlayer distances for long-life Na-ion batteries

MXenes are a recently discovered class of two-dimensional materials that have shown great potential as electrodes in electrochemical energy storage devices. Despite their promise in this area, MXenes can still suffer limitations in the form of restricted ion accessibility between the closely spaced multistacked MXene layers, causing low capacities and poor cycle life. Pillaring, a strategy where a secondary species is inserted between layers, has been used to increase interlayer spacings in clays with great success, but has had limited application in MXenes. We report a new amine-assisted pillaring methodology that successfully intercalates silica-based pillars between Ti3C2 layers. Using this technique, the interlayer spacing can be controlled with the choice of amine and calcination temperature, up to a maximum of 3.2 nm, the largest interlayer spacing reported for an MXene. Another effect of the pillaring is a dramatic increase in surface area, achieving BET surface areas of 235 m2 g-1, a sixty-fold increase over the unpillared material and the highest reported for MXenes using an intercalation-based method. The intercalation mechanism was revealed by different characterisation techniques, allowing the surface chemistry to be optimised for the pillaring process. The porous MXene was tested for Na-ion battery applications, and showed superior capacity, rate capability and remarkable stability compared with non-pillared materials, retaining 98.5% capacity between the 50th and 100th cycles. These results demonstrate the applicability and promise of pillaring techniques applied to MXenes, providing a new approach to optimising their properties for a range of applications. Porous MXenes are very promising materials for a range of applications including energy storage, conversion, catalysis and gas separations

Electrical and geometrical tuning of MoS2 field effect transistors:Via direct nanopatterning

Mechanically exfoliated van der Waals materials can be used to prepare proof-of-concept electronic devices. Their optoelectronic properties strongly depend on the geometry and number of layers present in the exfoliated flake. Once the device fabrication steps have been completed, tuning the device response is complex, since the geometry and number of layers cannot be easily modified. In this work, we employ Pulsed Focused Electron Beam Induced Etching (PFEBIE) to tailor the geometry and electronic properties of field effect transistors based on mechanically exfoliated Molybdenum Disulfide (MoS2) flakes. First, MoS2 field effect transistors are fabricated via optical lithography and conventional methods. Then, the geometry of the MoS2 source-drain conduction channel is modified employing a Xenon difluoride (XeF2) gas injection nozzle combined with a pulsed electron beam pattern-generation system. Electrical characterization of devices carried out before and after the nanopatterning step via PFEBIE reveals a shift in the doping from N-type towards P-type. We attribute this change to sulfur vacancies induced during the direct nanopatterning step. This is confirmed by micro-Raman and micro-Photoluminescence spectroscopy experiments. The direct nanopatterning method allows us to fine-tune the geometry and thus the electronic properties of the devices, once the conventional fabrication steps have been completed. The success rate of our tailoring method exceeds 85% when tuning the geometry of the flake into a 250 nm wide and straight conduction channel between source and drain

Hands-On Quantum Sensing with NV− Centers in Diamonds

The physical properties of diamond crystals, such as color or electrical conductivity, can be controlled via impurities. In particular, when doped with nitrogen, optically active nitrogen-vacancy centers (NV), can be induced. The center is an outstanding quantum spin system that enables, under ambient conditions, optical initialization, readout, and coherent microwave control with applications in sensing and quantum information. Under optical and radio frequency excitation, the Zeeman splitting of the degenerate states allows the quantitative measurement of external magnetic fields with high sensitivity. This study provides a pedagogical introduction to the properties of the NV centers as well as a step-by-step process to develop and test a simple magnetic quantum sensor based on color centers with significant potential for the development of highly compact multisensor systems

Tailoring of the optoelectronic properties of few layer Molybdenum Disulfide (MoS2) Devices via Pulsed eBeam Gas Assisted Patterning

Two dimensional materials have received much attention in recent years for their outstanding properties. Semiconducting 2D MoS2 is considered a good candidate for device applications due to its superior electrical and optical properties. Optoelectronic properties of MoS2 flakes strongly depend on the geometry and number of atomic layers present in the flake. In general, these properties can not be modified once a device is fabricated. In this work we present prelimiary results on a novel nano-patterning method, pulsed e-beam gas assisted patterning (PEBGAP), that allows us to tailor the electronic or optical properties of MoS2 devices. We can modify the carrier channel geometry, its thickness or even underetch it to release a suspended membrane. Field effect devices were fabricated from mechanically exfoliated few-layer MoS2 flakes via optical and electron beam lithography followed by a metal evaporation and lift-off process to define the gate-contact structures. The devices were characterised employing Optical (Raman, μPL) and electrical light dependence transport measurements and Scanning Near Field Optical Microscopy (SNOM). Afterwards, PEBGAP was utilized to alter device geometries and structures with the aim of modifying their optoelectronic properties. By using this method, it may also be possible to bring out new physical phenomena in this material (superconductivity of suspended MoS2 wires in membranes, quantum correlation phenomena, magnetic response, etc.) or develope new routes towards nano-electro-mechanical-optical systems (NEMOS). We will show our preliminary results of the devices properties before and after their modification