OTFTs de type N à base de semiconducteurs π-conjugués : fabrication, performance et stabilité

The main goal of this present work consists in the fabrication and optimization of N type organic field effect transistors. Bottom Gate Bottom Contact transistors are performed at low temperature T<120°C. Three different electro-deficient organic molecules are thermally evaporated and used as active layer. OTFTs based on LPP core molecule present low field effect mobility around 10-5cm2/V.s. The optimization study investigated on deposition parameters of this molecule on OTFTs performances does not allow improving this mobility. Moreover gate bias stress measurements reveal important instabilities related to this molecule. Indenfluorene derivatives core (IF) based OTFTs show better performances. Field effect mobility µFE=2.1x10-4 cm2/V is reached using IF(CN2)2 meta in optimized deposition conditions and µFE=1x10-2 cm2/V.s is obtained using IF(CN2)2 para after annealing treatment. The investigated gate bias stress study highlights the good electrical stability of IF(CN2)2 para based OTFTs. Temperature measurements allow us studying the charge transport phenomenon in these indenofluorene derivatives. Fabricated N-type OTFTs are used to perform a first electronic circuit that consists in a logic gate (invertor).Finally this low temperature process led us to achieve OTFTs devices on flexible substrates (PEN).L'objectif de ce travail de recherche est l'élaboration et l'optimisation de transistors à effet de champ organiques de type N (OTFTs). Des transistors en structure Bottom Gate Bottom Contact sont fabriqués à basse température T<120°C. Trois différentes molécules organiques conductrices d'électrons, déposées par évaporation thermiques, sont utilisées pour la couche active. Les OTFTs à base de la première molécule à corps LPP présentent de faibles mobilités à effet de champ de l'ordre de 10-5cm2/V.s. L'étude d'optimisation menée sur les conditions de dépôt de cette dernière n'a pas permis d'améliorer ses performances électriques. L'étude de stabilité électrique ''Gate Bias Stress'' a mis en évidence les instabilités de cette molécule. Les OTFTs à base des deux dérivés indénofluorènes (IF) possèdent des mobilités plus importantes. Dans les conditions optimales la molécule IF(CN2)2 méta permet d'atteindre une mobilité d'effet de champ µFE=2.1x10-4 cm2/V, alors que la molécule IF(CN2)2 para permet d'obtenir des mobilités µFE=1x10-2cm2/V.s après recuit. L'étude de stabilité électrique a mis en évidence une meilleure stabilité des OTFTs à base de IF(CN2)2 para. Une étude des phénomènes de transport de charges est menée pour les deux types de molécules. Les OTFTs de type N réalisés sont utilisés pour la réalisation d'un circuit logique de type inverseur pseudo-CMOS. Finalement, ce procédé basse température nous a permis de réaliser des OTFTs sur substrat flexible

Electron deficient dicyanovinylene-ladder-type pentaphenylene derivative for n-type Organic Field Effect Transistors

International audienceA bridged pentaphenylene derivative functionalized with dicyanovinylene units LPP([double bond, length as m-dash]C(CN)2)2 has been designed, synthesized and characterized. The optical and electrochemical properties have been carefully studied through a combined experimental and theoretical approach and compared with those of two pentaphenylene derivatives bearing methylenes (LPP) or carbonyl (LPP([double bond, length as m-dash]O)2) on the bridgeheads. LPP([double bond, length as m-dash]C(CN)2)2 which possesses a very low LUMO level, ca. −4.02 eV, has been successfully used as an active layer in n-channel OFETs using the epoxy based photoresist SU-8 as a gate insulator. LPP([double bond, length as m-dash]C(CN)2)2 based n-channel OFETs show low voltage functioning (low gate-source and drain-source voltages), high ratio between the on and the off currents (2 × 105), interesting subthreshold swing (S = 1) and excellent stability under electrical stress and in a nitrogen atmosphere. More importantly, we have also shown that LPP([double bond, length as m-dash]C(CN)2)2 based n-channel OFETs present an excellent environmental stability. This work is to the best of our knowledge the first report on bridged pentaphenylene-based semiconductors in n-type OFETs and highlights the potential of such type of material to provide air stable OFETs

N-type OTFTs based on π-conjugated semiconductors : elaboration, performance and stability

L'objectif de ce travail de recherche est l'élaboration et l'optimisation de transistors à effet de champ organiques de type N (OTFTs). Des transistors en structure Bottom Gate Bottom Contact sont fabriqués à basse température T<120°C. Trois différentes molécules organiques conductrices d'électrons, déposées par évaporation thermiques, sont utilisées pour la couche active. Les OTFTs à base de la première molécule à corps LPP présentent de faibles mobilités à effet de champ de l'ordre de 10-5cm2/V.s. L'étude d'optimisation menée sur les conditions de dépôt de cette dernière n'a pas permis d'améliorer ses performances électriques. L'étude de stabilité électrique ''Gate Bias Stress'' a mis en évidence les instabilités de cette molécule. Les OTFTs à base des deux dérivés indénofluorènes (IF) possèdent des mobilités plus importantes. Dans les conditions optimales la molécule IF(CN2)2 méta permet d'atteindre une mobilité d'effet de champ µFE=2.1x10-4 cm2/V, alors que la molécule IF(CN2)2 para permet d'obtenir des mobilités µFE=1x10-2cm2/V.s après recuit. L'étude de stabilité électrique a mis en évidence une meilleure stabilité des OTFTs à base de IF(CN2)2 para. Une étude des phénomènes de transport de charges est menée pour les deux types de molécules. Les OTFTs de type N réalisés sont utilisés pour la réalisation d'un circuit logique de type inverseur pseudo-CMOS. Finalement, ce procédé basse température nous a permis de réaliser des OTFTs sur substrat flexible.The main goal of this present work consists in the fabrication and optimization of N type organic field effect transistors. Bottom Gate Bottom Contact transistors are performed at low temperature T<120°C. Three different electro-deficient organic molecules are thermally evaporated and used as active layer. OTFTs based on LPP core molecule present low field effect mobility around 10-5cm2/V.s. The optimization study investigated on deposition parameters of this molecule on OTFTs performances does not allow improving this mobility. Moreover gate bias stress measurements reveal important instabilities related to this molecule. Indenfluorene derivatives core (IF) based OTFTs show better performances. Field effect mobility µFE=2.1x10-4 cm2/V is reached using IF(CN2)2 meta in optimized deposition conditions and µFE=1x10-2 cm2/V.s is obtained using IF(CN2)2 para after annealing treatment. The investigated gate bias stress study highlights the good electrical stability of IF(CN2)2 para based OTFTs. Temperature measurements allow us studying the charge transport phenomenon in these indenofluorene derivatives. Fabricated N-type OTFTs are used to perform a first electronic circuit that consists in a logic gate (invertor).Finally this low temperature process led us to achieve OTFTs devices on flexible substrates (PEN)

Gold-induced crystallization of amorphous germanium deposited on glass : bilayer and multilayer films

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Electronic Sensor with Integrated Microchannel: Application to pH

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Stable N-type OFETs using new pentaphenylene derivative LPP(CN2)2

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Electrical characterization of N-type OFETs using new indenofulorene derivative IF(CN2)2

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Flexible n-type organic transistors using a new indenofluorene derivative performed on PEN substrate

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Electrical stability of N-type OFETs using new pentaphenylene derivative LPP(CN2)2

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Structure properties relationship study of electron-deficient dihydroindeno [2,1-b]fluorene derivatives for n-type Organic Field Effect Transistors.

International audienceA bridged syn triphenylene deriv., namely 5,7-dihydroindeno[2,1-b]fluorene, functionalized with dicyanovinylene units (2,1-b)-IF(♂C(CN)2)2 has been designed, synthesized and characterized. Its optical and electrochem. properties have been carefully studied through a combined exptl. and theor. approach and compared to those of three other structurally related dihydro[2,1-b]indenofluorene derivs. bearing methylenes, (2,1-b)-IF, carbonyls, (2,1-b)-IF(♂O)2, or both carbonyl and dicyanovinylene, (2,1-b)-IF(♂O)(♂C(CN)2) on the bridgeheads. (2,1-b)-IF(♂C(CN)2)2, which possesses a very low LUMO level, ca. -3.81 eV, has been successfully used as an active layer in n-channel OFETs using an epoxy based photoresist SU-8 as the gate insulator. (2,1-b)-IF(♂C(CN)2)2 based n-channel OFETs show promising properties such as a low threshold voltage functioning of 7.2 V (low gate-source and drain-source voltages), a high ratio between the on and the off currents (6.3 × 105), interesting subthreshold swing (SS = 2.16) and electron mobility (\textgreater10-3 cm2 V-1 s-1) and excellent stability under elec. stress. This elec. stability has allowed the incorporation of (2,1-b)-IF(♂C(CN)2)2 based n-channel OFETs in an integrated circuit. Thus, as a proof of concept, pseudo CMOS inverters made of n-type (2,1-b)-IF(♂C(CN)2)2-based OFETs have been fabricated and characterized highlighting the potential of this new family of materials