Cognitive behavioral therapy for the management of multiple sclerosis–related pain: a randomized clinical trial

BACKGROUND: Pain is a common and often debilitating symptom among persons with multiple sclerosis (PwMS). Besides interfering with daily functioning, pain in MS is associated with higher levels of depression and anxiety. While cognitive-behavioral therapy (CBT) for pain has been found to be an effective treatment in other populations, there has been a dearth of research in PwMS. METHODS: PwMS with at least moderate pain severity (N = 20) were randomly assigned to one of two groups: CBT plus standard care (CBT/SC) or MS-related education plus standard care (ED/SC), each of which met for 12 sessions. Changes in pain severity, pain interference, and depressive symptom severity from baseline to the 15 week follow-up were assessed using a 2×2 factorial design. Participants also rated their satisfaction with their treatment and accomplishment of personally meaningful behavioral goals. RESULTS: Both treatment groups rated their treatment satisfaction as very high and their behavioral goals as largely met, although only the CBT/SC group's mean goal accomplishment ratings represented significant improvement. While there were no significant differences between groups post-treatment on the three primary outcomes, there was an overall improvement over time for pain severity, pain interference, and depressive symptom severity. CONCLUSIONS: CBT or education-based programs may be helpful adjunctive treatments for PwMS experiencing pain.Accepted manuscrip

Single-electron transistors with wide operating temperature range

Abstract : Single-electron transistors are fabricated with a planar self-aligned process using chemical mechanical polishing. The method is demonstrated with Ti∕TiOxTi∕TiOx junctions and resistless lithography. The device characterization showed Coulomb blockade up to 433K433K. High temperature data allowed one to calculate the impact of the process variations on the charging energy and thus on a realistic operating temperature. It is found that single electron devices can have an operating temperature range similar to conventional silicon transistors, opening the door to hybrid designs. These approaches are promising because advanced functionality is created by an optimal combination of both technology strengths

Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs

Abstract : Room temperature micro-Raman investigations of LO phonon and LO phonon-plasmon coupling is used to study the AsAs outgassing mechanism and the disordering effects induced by ion implantation in ZnZn-doped GaAsGaAs with nominal doping level p=7×1018cm−3p=7×1018cm−3. The relative intensity of these two peaks is measured right after rapid vacuum thermal annealings (RVTA) between 200 and 450°C450°C, or after ion implantations carried out at energies of 40keV40keV with P+P+, and at 90 and 170keV170keV with As+As+. These intensities provide information regarding the Schottky barrier formation near the sample surface. Namely, the Raman signature of the depletion layer formation resulting from AsAs desorption is clearly observed in samples submitted to RVTA above 300°C300°C, and the depletion layer depths measured in ion implanted GaAs:ZnGaAs:Zn are consistent with the damage profiles obtained through Monte Carlo simulations. Ion channeling effects, maximized for a tilt angle set to 45°45° during implantation, are also investigated. These results show that the Raman spectroscopy is a versatile tool to study the defects induced by postgrowth processes in multilayered heterostructures, with probing range of about 100nm100nm in GaAsGaAs-based materials

Regolith and landscape evolution in Peninsular India and West Africa: morphoclimatic evolution of the two continents over the Cenozoic

Shields’ surfaces of the tropical belt have been continuously shaped over the Cenozoic under the combined or alternating effects of chemical weathering and mechanical erosion that left stepped relict lateritic paleolandsurfaces exposing different generations and type of regolith in today’s sceneries. These lateritic paleolandscape remnants are well preserved in West Africa and in highland Peninsular India, particularly on Deccan Traps. The stepped character of such paleolandscape remnants allows to describing a common geomorphic sequence of three successive sub-continental scale lateritic paleolandsurfaces on the two sub regions. The first surface is defined by the oldest remnants, which are generally topped by Al-Fe (mostly bauxitic) lateritic duricrusts upon distant kmscale mesas or as larger provinces on high relictual topographic massifs (e.g., Fouta Djalon in West Africa or Nilgiri hills in South India). The relict bauxitic landforms generally dominate from less than ca. 300 m the relicts of a second geomorphic level (so-called “intermediate” surface), which is mantled by ferruginous lateritic duricrusts. The third and last paleolandsurface remnants lie less than ca. 400 m below the bauxitic landforms, and consist in a weathered lateritic pediment that is locally capped by a ferricrete. The ages of these continental-scale lateritic paleolandsurfaces may be bracketed using 40Ar/39Ar dating of K-Mn oxides (cryptomelane) formed in their underlying weathering profiles in the African and Indian contexts [1,2,3]. The first surface is Eocene and correlates with the Eocene climatic optimum (ca. 50 Ma) that is recorded throughout the tropical belt by the production of bauxite. In South India, the Intermediate surface has evolved by dominant chemical weathering since the Late Eocene (ca. 37 Ma) and records peak weathering activity in the Late Oligocene. In West Africa, that paleolandsurface seems to have only record the late Oligocene interval (ca. 29-24 Ma) of intense weathering. Abandonment of the Intermediate landscape as a result of its dissection by the river network took place in the Latest Oligocene on both continents. By contrast, the later pediment seems to have been shaped quite rapidly (ca. 32-29 Ma) and was weathered around the Oligocene- Miocene boundary (ca. 29-24 Ma) in India, whereas it took longer to form (ca. 24-18 Ma) and was weathered mostly during the Mid-Miocene (ca. 18-11 Ma) in West Africa. The contrasts in the morphoclimatic record of the two sub regions are linked to the spatial diversification of climatic regimes after the Eocene climatic optimum. However, the combination of the ages with the elevation differences between each lateritic paleolandsurface documents denudation rates with comparable and very low amplitudes (5-15 m/m.y.) in these two continents over the last 50 Ma. [1] Beauvais A and Chardon D (2013) Geochem Geophys Geosyst 14:1590-1608, doi:10.1002/ggge.20093. [2] Bonnet NJ et al. (2014) Earth Planet Sci Lett 386:126-137, doi:10.1016/j.epsl.2013.11.002 [3] Bonnet NJ et al. (2016) Chem Geol, in press

Method for fabricating submicron silicide structures on silicon using a resistless electron beam lithography process

Abstract : A novel resistless lithography process using a conventional electron beam system is presented. Metallic lines with widths of less than 50 nm were produced on silicon substrates. The process is based on localized heating with a focused electron beam of thin platinum layers deposited on silicon. It is demonstrated that silicide formation occurs at the Pt-Si interface. By using a dilute solution of aqua regia, it is possible to obtain a sufficient difference in etch rates between exposed and unexposed regions of the platinum thin film to selectively remove only the unexposed areas