Ici-bas!

High school student Moses King isn\u27t a goody two-shoes, but the bully Samuel doesn\u27t understand (or care) about this fact. In this story written by Nicholas Koloian, Moses finds his retribution through his bold friend, Henry, who must overcome his own problems in a tale exploring race, sexuality, and high school bullying

An analysis of security issues in building automation systems

The purpose of Building Automation Systems (BAS) is to centralise the management of a wide range of building services, through the use of integrated protocol and communication media. Through the use of IP-based communication and encapsulated protocols, BAS are increasingly being connected to corporate networks and also being remotely accessed for management purposes, both for convenience and emergency purposes. These protocols, however, were not designed with security as a primary requirement, thus the majority of systems operate with sub-standard or non-existent security implementations, relying on security through obscurity. Research has been undertaken into addressing the shortfalls of security implementations in BAS, however defining the threats against BAS, and detection of these threats is an area that is particularly lacking. This paper presents an overview of the current security measures in BAS, outlining key issues, and methods that can be improved to protect cyber physical systems against the increasing threat of cyber terrorism and hacktivism. Future research aims to further evaluate and improve the detection systems used in BAS through first defining the threats and then applying and evaluating machine learning algorithms for traffic classification and IDS profiling capable of operating on resource constrained BAS

The role of Gray’s revised RST in the P–psychopathy continuum: the relationships of Psychoticism with a lack of fear and anxiety, and increased impulsivity

Gray's revised Reinforcement Sensitivity Theory (rRST; Gray & McNaughton, 2000) may play a role in explaining deficits in Psychoticism (P) and psychopathy (Corr, 2010). In this paper, we examine the relationships of P with anxiety, fear, impulsivity and reward reactivity in normal populations to assess whether these associations mirror the hypothesized role of RST motivations in psychopathy. Two hundred and twelve participants completed measures of Psychoticism, impulsivity and rRST motivations (BIS-anxiety, FFFS-fear and BAS). BIS-anxiety mediated the association of P with FFFS-fear and BAS-fun seeking. An exploratory factor analysis distinguished between trait impulsivity (P, impulsivity and BIS) and reward reactivity (BAS-reward responsiveness and BAS-drive). Subsequent moderation analyses showed that whilst neither BIS nor BAS moderated the P-impulsivity link, the association between P and impulsivity was more pronounced in individuals with raised levels of FFFS-fear. Findings are discussed in terms of the roles of fear versus anxiety and impulsivity versus reward reactivity in the P-psychopathy continuum

BAs and boride III-V alloys

Boron arsenide, the typically-ignored member of the III-V arsenide series BAs-AlAs-GaAs-InAs is found to resemble silicon electronically: its Gamma conduction band minimum is p-like (Gamma_15), not s-like (Gamma_1c), it has an X_1c-like indirect band gap, and its bond charge is distributed almost equally on the two atoms in the unit cell, exhibiting nearly perfect covalency. The reasons for these are tracked down to the anomalously low atomic p orbital energy in the boron and to the unusually strong s-s repulsion in BAs relative to most other III-V compounds. We find unexpected valence band offsets of BAs with respect to GaAs and AlAs. The valence band maximum (VBM) of BAs is significantly higher than that of AlAs, despite the much smaller bond length of BAs, and the VBM of GaAs is only slightly higher than in BAs. These effects result from the unusually strong mixing of the cation and anion states at the VBM. For the BAs-GaAs alloys, we find (i) a relatively small (~3.5 eV) and composition-independent band gap bowing. This means that while addition of small amounts of nitrogen to GaAs lowers the gap, addition of small amounts of boron to GaAs raises the gap (ii) boron ``semi-localized'' states in the conduction band (similar to those in GaN-GaAs alloys), and (iii) bulk mixing enthalpies which are smaller than in GaN-GaAs alloys. The unique features of boride III-V alloys offer new opportunities in band gap engineering.Comment: 18 pages, 14 figures, 6 tables, 61 references. Accepted for publication in Phys. Rev. B. Scheduled to appear Oct. 15 200

The Maximal Rank of Elliptic Delsarte Surfaces

Shioda described in his article from 1986 a method to compute the Lefschetz number of a Delsarte surface. In one of his examples he uses this method to compute the rank of an elliptic curve over k(t). In this article we find all elliptic curves over k(t) for which his method is applicable. For each of these curves we also compute the Mordell-Weil rank