Adiponectin and Cardiac Hypertrophy in Acromegaly

Background. Adiponectin is an adipocytes-derived hormone which has been shown to possess insulin-sensitizing, antiatherogenic, and anti-inflammatory properties. In acromegaly, the data on adiponectin is contradictory. The relationship between adiponectin levels and cardiac parameters has not been studied.Objectives. The aim of this study was to find out how adiponectin levels were affected in acromegalic patients and the relationship between adiponectin levels and cardiac parameters.Material and Methods. We included 30 subjects (15 male, 15 female), diagnosed with acromegaly and 30 healthy (10 male, 20 female) subjects. Serum glucose, insulin, GH, IGF-1 and adiponectin levels were obtained and the insulin resistance of the subjects was calculated. Echocardiographic studies of the subjects were performed.Results. We determined that adiponectin levels were significantly higher in the acromegalic group than the control group. In the acromegalic group, there was no statistically significant relation between serum adiponectin and growth hormone (GH), or insulin-like growth factor-1 (IGF-1) levels (p = 0.3, p = 0.1). We demonstrated that cardiac function and structure are affected by acromegaly. IVST, PWT, LVMI, E/A ratio, DT, ET, IVRT, VPR, and LVESV values were increased and the results were statistically significant. In the acromegalic group, adiponectin levels were positively related with left ventricle mass index (LVMI) but this correlation was found to be statistically weak (p = 0.03). In our study, there was a positive correlation between VAI and LVM. We also could not find any correlation between VAI and adiponectin levels.Conclusions. Although insulin resistance and high insulin levels occur in active acromegaly patients, adiponectin levels were higher in our study as a consequence of GH lowering therapies. Our study showed that adiponectin levels may be an indicator of the cardiac involvement acromegaly. However, the usage of serum adiponectin levels in acromegalic patients as an indicator of cardiac involvement should be supported with other, wide, multi-centered studies

Hot Photoluminescence in γ-In2Se3Nanorods

The energy relaxation of electrons in γ-In2Se3nanorods was investigated by the excitation-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature (Te) of the hot electrons. TheTevariation can be explained by a model in which the longitudinal optical (LO)-phonon emission is the dominant energy relaxation process. The high-quality γ-In2Se3nanorods may be a promising material for the photovoltaic devices

Optical absorption edge and Urbach tails for Tl_0.999GaPr_0.001Se₂, <span style="font-size:14.0pt;line-height:115%;font-family:"Times New Roman"; mso-fareast-font-family:"Times New Roman";mso-ansi-language:EN-IN;mso-fareast-language: EN-IN;mso-bidi-language:HI">Tl_0.995GaPr_0.005Se₂ and TlGaSe₂</span>

647-653TlGaSe2, Tl0.999GaPr0.001Se2, and Tl0.995GaPr0.005Se2, single crystals were grown by the Stockbarger method. The absorption measurements were carried out in these samples in temperature range 10-320 K with a step of 10K. The phonon energies calculated in TlGaSe2, Tl0.999GaPr0.001Se2 and Tl0.995GaPr0.005Se2 are 60.0±5, 55.0±5 and 130.0±5 meV respectively. The first defect levels (n=1) have been found as 2.259, 2.235, 2.200 and 2.149 eV for Tl0.999GaPr0.001Se2 and 2.254, 2.225, 2.189 and 2.149 eV for Tl0.995GaPr0.005Se2 at 10,100, 200 and 300 K. At 300 K direct band gap of TIGaSe2 is 2.156 eV, and indirect band gap is 2.075 eV. There are abrupt changes in the Urbach energy peaks for Tl0.999GaPr0.001Se2 at 100 and 200 K, and Tl0.995GaPr0.005Se2 at 200 and 260 K. There is an abrupt change in the σ0 values for Tl0.999GaPr0.001Se2 and Tl0.995GaPr0.005Se2 in the temperature range 140-180 K and 220-260 K. These temperatures obtained from the changing of Urbach energy and σ0 values may be phase transition temperatures

Persistent galvanomagnetic effects related to photo-quenching phenomena in lightly n-type LEC GaAs

We investigated the effect of photo quenching on the galvanomagnetic properties in Te doped n-type GaAs grown by Liquid Encapsulated Czochralski (LEC) process. Although magnetoresistance coefficient and carrier concentration do not change as a function of photo-quenching time at 55 K, the Hall mobility increases with increasing photoquenching illumination time. This results from the photo-quenching of the EL2 centres. On the other hand, the Hall mobility and carrier concentration increase with increasing photoquenching time at 10 K. These are expected because of the acceptor behaviour of reverse contrast (RC) centres. The magnetoresistance coefficients are constant at this temperature. Two different kinds of photo-quenching are once again observed in lightly n-type GaAs at sample temperature of below 65 K and 40 K from a different aspect using galvano-magnetic effects

Growth of InSe:Mn semiconductor crystals by Bridgman-Stockbarger technique and analysis of electron irradiation effects on Sn/InSe:Mn Schottky diodes

WOS: 000382221100014Mn-doped p-InSe semiconductor crystals were grown by Bridgman -Stockbarger technique. The crystals were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and fabricated Sn/InSe: Mn Schottky diodes. The current-voltage (I-V) and capacitance-voltage (C-V) measurements of diodes were investigated to determine the response of devices to electron irradiation with 9 MeV energy and 1.2x10(10) e-cm(-2) dose. After irradiation, the ideality factor and barrier height of the Sn/InSe: Mn Schottky diode were determined as 1.66 and 0.85 eV, respectively. Before irradiation, they were determined as 1.37 and 0.90 eV, respectively. It has been concluded that the radiation with high energy may contribute to form defects at the interface of the Sn/InSe:Mn device

Small bowel intussusception in a pregnant woman with Peutz–Jeghers Syndrome

Intussusception is the most frequent complication of Peutz-Jeghers Syndrome (PJS), but usually seen in child age. It is a predictable, but infrequent complication in adults with PJS. However, there is no report about intussusception in pregnancy period secondary to Peutz-Jeghers (PJ) polyps in the literature. In this paper, we present a rare intussusception case in a pregnant woman with PJS, which was diagnosed with magnetic resonance imaging, and discuss this condition with a brief literature review