Low dielectric constant Parylene-F-like films for intermetal dielectric applications

Cataloged from PDF version of article.We report on the dielectric properties and thermal stability of thin polymer films that art: suitable candidates for replacing silicon dioxide as the intermetal dielectric material in integrated circuits. Parylene-F-Iike films, (-CF2-C6H4-CF2-)(n), were produced by plasma deposition from a mixture of Ar and 1,4-bis(trifluoromethyl)benzene (CF3-C6H4-CF3) discharges and characterized using infrared absorption spectroscopy, spectroscopic ellipsometry, and capacitance measurements. The dielectric constant and the magnitude of the electronic and ionic contributions to the dielectric constant were determined through capacitance measurements and Kramers-Kronig analysis of the infrared absorption data. The film's dielectric constant ranges between 2 and 2.6 depending on the deposition conditions and the largest contribution to the dielectric constant is electronic. The films deposited at 300 degrees C are stable above 400 degrees C and further optimization could push this limit to as high as 500 degrees C. (C) 1999 American Institute of Physics

Comparison of Electron and Hole Charge-Discharge Dynamics in Germanium Nanocrystal Flash Memories

Cataloged from PDF version of article.Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons. (c) 2008 American Institute of Physics

Electro-Optic and Electro-absorption characterization of InAs quantum dot waveguides

Cataloged from PDF version of article.Abstract Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm. (C) 2008 Optical Society of America

High power gain for stimulated Raman amplification in CuAlS2

Cataloged from PDF version of article.The spontaneous Raman spectra of the chalcopyrite structure crystal CuAlS2, which is promising for nonlinear optical applications, has been investigated at 8 and 300 K. The main aim of this study is to compare the absolute spontaneous Raman scattering efficiency in CuAlS2 crystals with that of their isomorphous analog, zinc-blende structure GaP crystals, known as one of the most efficient materials for amplification. Observation of a high value of absolute scattering efficiency S/L d Omega (where S is the fraction of incident power that scatters into the solid angle d Omega and L is the optical path length with S/L d Omega=9.5X10(-5) cm(-1) sr(-1)), together with relatively narrow linewidth (Gamma=5.1 cm(-1), full width at half maximum at room temperature and Gamma=1.5 cm(-1) at 8 K for the strongest Gamma(1) phonon mode of CuAlS2 at 314 cm(-1)) indicate that CuAlS2 has the highest value of the stimulated Raman gain coefficient g(s)/I where I is the incident laser power density, The calculated value of this gain is g(s)/I=2.1X10(-6) cm(-1)/W at 300 K and 50X10(-6) cm/W, at 8 K for 514.5 nm laser excitation, and is larger than those for the appropriate vibrational modes of various materials (including GaP, LiNbO3, Ba2NbO5O15, CS2 and H-2) investigated so far. The calculations show that cw Raman oscillator operation in CuAlS2 is feasible with low power threshold of pump laser. (C) 1996 American Institute of Physics

Non-invasive detection of biliary leaks using Gd-EOB-DTPA-enhanced MR cholangiography: Comparison with T2-weighted MR cholangiography

Objective: To evaluate the added role of T1-weighted (T1w) gadolinium ethoxybenzyl diethylenetriamine penta-acetic acid (Gd-EOB-DTPA)-enhanced magnetic resonance cholangiography (MRC) compared with T2-weighted MRC (T2w-MRC) in the detection of biliary leaks. Methods: Ninety-nine patients with suspected biliary complications underwent routine T2w-MRC and T1w contrast-enhanced (CE) MRC using Gd-EOB-DTPA to identify biliary leaks. Two observers reviewed the image sets separately and together. MRC findings were compared with those of surgery and percutaneous transhepatic cholangiopancreatography. The sensitivity, specificity and accuracy of the techniques in identifying biliary leaks were calculated. Results: Accuracy of locating biliary leaks was superior with the combination of Gd-EOB-DTPA-enhanced MRC and T2w-MRC (P < 0.05).The mean sensitivities were 79 % vs 59 %, and the mean accuracy rates were 84 % vs 58 % for combined CE-MRC and T2w-MRC vs sole T2w-MRC. Nineteen out of 21 patients with biliary-cyst communication, 90.4 %, and 12/15 patients with post-traumatic biliary extravasations, 80 %, were detected by the combination of Gd-EOB-DTPA-enhanced MRC and T2w-MRC images, P < 0.05. Conclusions: Gd-EOB-DTPA-enhanced MRC yields information that complements T2w-MRC findings and improves the identification and localisation of the bile extravasations (84 % accuracy, 100 % specificity, P < 0.05). We recommend Gd-EOB-DTPA-enhanced MRC in addition to T2w-MRC to increase the preoperative accuracy of identifying and locating extravasations of bile. Key Points: • Magnetic resonance cholangiography (MRC) does not always detect bile leakage and cysto-biliary communications. • Gd-EOB-DTPA-enhanced MRC helps by demonstrating extravasation of contrast material into fluid collections. • Gd-EOB-DTPA-enhanced MRC also demonstrates the leakage site and bile duct injury type. • Combined Gd-EOB-DTPA-enhanced and T2w-MRC can provide comprehensive information about biliary system. • Gd-EOB-DTPA-enhanced MRC is non-invasive and does not use ionising radiation. © 2013 The Author(s)

Modulation in InAs quantum dot waveguides

Modulation in molecular beam epitaxy grown self-assembled InAs quantum dot waveguides have been studied at 1500 nm as a function of wavelength and voltage. Enhanced electro-optic coefficients compared to bulk GaAs were observed. © 2007 Optical Society of America

Acquired A amyloidosis from injection drug use presenting with atraumatic splenic rupture in a hospitalized patient: a case report

<p>Abstract</p> <p>Introduction</p> <p>Little is known about splenic rupture in patients who develop systemic acquired A amyloidosis. This is the first report of a case of atraumatic splenic rupture in a patient with acquired A amyloidosis from chronic injection drug use.</p> <p>Case presentation</p> <p>A 58-year-old Caucasian man with a long history of injection drug use, hospitalized for infective endocarditis, experienced atraumatic splenic rupture and underwent splenectomy. Histopathological and microbiological analyses of the splenic tissue were consistent with systemic acquired A amyloidosis, most likely from injection drug use, that led to splenic rupture without any recognized trauma or evidence of bacterial embolization to the spleen.</p> <p>Conclusion</p> <p>In patients with chronic inflammatory conditions, including the use of injection drugs, who experience acute onset of left upper quadrant pain, the diagnosis of atraumatic splenic rupture must be considered.</p

Raman scattering from confined phonons in GaAs/AlGaAs quantum wires

We report on photoluminescence and Raman scattering performed at low temperature (T = 10 K) on GaAs/Al 0.3Ga 0.7As quantum-well wires with effective wire widths of L = 100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic thinning. We find evidence for the existence of longitudinal optical phonon modes confined to the GaAs quantum wire. The observed frequency at ω L10 = 285.6 cm -1 for L = 11.0 nm is in good agreement with that calculated on the basis of the dispersive dielectric continuum theory of Enderlein† as applied to the GaAs/Al 0.3Ga 0.7As system. Our results indicate the high crystalline quality of the quantum-well wires fabricated using these techniques. © 1998 Academic Press

Utilization of galactomannan from Gleditsia triacanthos in polysaccharide-based films : effects of interactions between film constituents on film properties

The objective of this work was to evaluate the effect of the concentrations of Gleditsia triacanthos galactomannan and glycerol and the presence of corn oil in the physical properties of edible films. The influence of interactions between those constituents on films' permeability to gases (water vapour, CO2 and O2), solubility in water, mechanical properties and colour was evaluated. The effects of those variables were analysed according to a 23 factorial design; regression coefficients were used to understand the influence of each variable (factor) on the studied properties, and a multifactor model was developed. Results show that galactomannan concentration is the most significant factor affecting the studied properties; moreover, the increase of plasticizer concentration and the presence of oil showed to be the most influent in the particular cases of solubility and transport properties (water vapour permeability and O2 permeability), respectively. These results show that galactomannan films' properties can be tailored to allow their use as alternative to non-biodegradable, non-edible packaging materials.The author M. A. Cerqueira is recipient of a fellowship from Fundacao para a Ciencia e Tecnologia (FCT, SFRH/BPD/72753/2010) and B. W. S. Souza is a recipient of a fellowship from the Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior, Brazil (Capes, Brazil)