CMOS-compatible SOI micro-hotplate-based oxygen sensor

© 2016 IEEE. The paper reports upon the design and characterization of a resistive O2 sensor, which is fully CMOS-compatible and is based on an ultra-low-power Silicon on Insulator (SOI) micro-hotplate membrane. The microsensor employs SrTi0.4Fe0.6O2.8 (STFO60) as sensing layer. Thermo-Gravimetric Analysis (TGA) Energy-Dispersive X-ray Spectroscopy (EDX), X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM) techniques have been used to assess the quality of both the sensing layer and STFO-SOI interface. At room temperature, the SOI sensor shows good sensitivity and fast response time (≤ 6 seconds) to O2 concentration ranging from 0% to 20% in a nitrogen atmosphere. This is the first experimental result showing the potential of this structure as O2 sensor

Nanostructured metal oxides semiconductors for oxygen chemiresistive sensing

Nanostructured metal oxide semiconductors have been widely investigated and are commonly used in gas sensing structures. After a brief review which will be focused on chemiresistive oxygen sensing employing this type of sensing materials, for both room temperature and harsh environment applications (particularly, at high ambient temperature and high relative humidity levels), paper reports new results concerning O2detection of a structure using a sensing layer comprising nanostructured (typical grain size of 50 nm) SrTi0.6Fe0.4O2.8(STFO40), synthesized by sonochemical methods, mixed with single wall carbon nanotubes. The structure is a Microelectromechanical System (MEMS), based on a Silicon-on-Insulator (SOI), Complementary Metal-Oxide-Semiconductor (CMOS)-compatible micro-hotplate, comprising a tungsten heater which allows an excellent control of the sensing layer working temperature. Oxygen detection tests were performed in both dry (RH = 0%) and humid (RH = 60%) nitrogen atmosphere, varying oxygen concentrations between 1% and 20% (v/v), at a constant heater temperature of 650 °C

Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics

A first-principles theoretical study of the electronic and optical properties of twisted bilayer GaN structures

Gallium nitride (GaN) is a well-investigated material that is applied in many advanced power electronic and optoelectronic devices due to its wide bandgap. However, derivatives of its monolayer form, such as bilayer structures, have rarely been reported. We study herein the electronic and optical properties of GaN bilayer structures that are rotated in the plane at several optimized angles by using the density functional theory method. To maintain the structural stability and use a small cell size, the twisting angles of the GaN bilayer structures are optimized to be 27.8°, 38.2°, and 46.8° using the crystal matching theory. The band-structure analysis reveals that the bandgap is wider for the twisted structures compared with the nontwisted case. The simulation results provide the absorption coefficient, extinction coefficient, reflectivity, and refractive index at these angles. The spectra of all these optical properties match with the bandgap values. The simulated refractive index of the bilayer structures at all the twisting angles including 0° is smaller than that of bulk GaN, indicating a reduced scattering loss for optoelectronics applications. Considering the results of this analysis, the possible applications may include low-loss integrated electronic and optical devices and systems

Mind the Gap: Transitions Between Concepts of Information in Varied Domains

The concept of 'information' in five different realms – technological, physical, biological, social and philosophical – is briefly examined. The 'gaps' between these conceptions are dis‐ cussed, and unifying frameworks of diverse nature, including those of Shannon/Wiener, Landauer, Stonier, Bates and Floridi, are examined. The value of attempting to bridge the gaps, while avoiding shallow analogies, is explained. With information physics gaining general acceptance, and biology gaining the status of an information science, it seems rational to look for links, relationships, analogies and even helpful metaphors between them and the library/information sciences. Prospects for doing so, involving concepts of complexity and emergence, are suggested