Orientation filtering by growth-velocity competition in zone-melting recrystallization of silicon on SiO_2

We describe a method of controlling the in-plane directions of grains in (100)-textured silicon films produced by zone-melting recrystallization over amorphous SiO2. Grains having in-plane orientation within a narrow range are able to grow through an orientation filter consisting of a pattern of crystallization barriers, while grains having other orientations are occluded. The results of experiments using an orientation filter, and the parameters which optimize filter performance, are reported

Electroluminescence and photoluminescence of Ge-implanted Si/SiO_2/Si structures

Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion implantation and precipitation during annealing at 900 °C, and the visible room‐temperature electroluminescence and photoluminescence spectra were found to be broadly similar. The electroluminescent devices have an onset for emission in reverse bias of approximately −10 V, suggesting that the mechanism for carrier excitation may be an avalanche breakdown caused by injection of hot carriers into the oxide. The electroluminescent emission was stable for periods exceeding 6 h

The role of quantum-confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals

Synthesis of Ge nanocrystals in SiO2 films is carried out by precipitation from a supersaturated solid solution of Ge in SiO2 made by Ge ion implantation. The films exhibit strong room-temperature visible photoluminescence. The measured photoluminescence peak energy and lifetimes show poor correlations with nanocrystal size compared to calculations involving radiative recombination of quantum-confined excitons in Ge quantum dots. In addition, the photoluminescence spectra and lifetime measurements show only a weak temperature dependence. These observations strongly suggest that the observed visible luminescence in our samples is not due to the radiative recombination of quantum-confined excitons in Ge nanocrystals. Instead, observations of similar luminescence in Xe+ -implanted samples and reversible PL quenching by hydrogen or deuterium suggest that radiative defect centers in the SiO2 matrix are responsible for the observed luminescence

L-band radar sensing of soil moisture

The performance of an L-band, 25 cm wavelength imaging synthetic aperture radar was assessed for soil moisture determination, and the temporal variability of radar returns from a number of agricultural fields was studied. A series of three overflights was accomplished over an agricultural test site in Kern County, California. Soil moisture samples were collected from bare fields at nine sites at depths of 0-2, 2-5, 5-15, and 15-30 cm. These gravimetric measurements were converted to percent of field capacity for correlation to the radar return signal. The initial signal film was optically correlated and scanned to produce image data numbers. These numbers were then converted to relative return power by linear interpolation of the noise power wedge which was introduced in 5 dB steps into the original signal film before and after each data run. Results of correlations between the relative return power and percent of field capacity (FC) demonstrate that the relative return power from this imaging radar system is responsive to the amount of soil moisture in bare fields. The signal returned from dry (15% FC) and wet (130% FC) fields where furrowing is parallel to the radar beam differs by about 10 dB

Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2

Two sources of room temperature visible luminescence are identified from SiO2 films containing ion beam synthesized Si nanocrystals. From a comparison of luminescence spectra and photoluminescence decay lifetime measurements between Xe + -implanted SiO2 films and SiO2 films containing Si nanocrystals, a luminescence feature attributable to defects in the SiO2 matrix is unambiguously identified. Hydrogen passivation of the films selectively quenches the matrix defect luminescence, after which luminescence attributable to Si nanocrystals is evident, with a lifetime on the order of milliseconds. The peak energy of the remaining luminescence attributable to Si nanocrystals ``redshifts'' as a function of different processing parameters that might lead to increased nanocrystal size and the intensity is directly correlated to the formation of Si nanocrystals. Upon further annealing hydrogen-passivated samples at low temperatures (< 500 °C), the intensity of nanocrystal luminescence increases by more than a factor of 10

A Cascade Neural Network Architecture investigating Surface Plasmon Polaritons propagation for thin metals in OpenMP

Surface plasmon polaritons (SPPs) confined along metal-dielectric interface have attracted a relevant interest in the area of ultracompact photonic circuits, photovoltaic devices and other applications due to their strong field confinement and enhancement. This paper investigates a novel cascade neural network (NN) architecture to find the dependance of metal thickness on the SPP propagation. Additionally, a novel training procedure for the proposed cascade NN has been developed using an OpenMP-based framework, thus greatly reducing training time. The performed experiments confirm the effectiveness of the proposed NN architecture for the problem at hand

Effects of Collective Potentials on Pion Spectra in Relativistic Heavy Ion Collisions

The effect of collective potentials on pion spectra in ultrarelativistic heavy ion collisions is investigated. We find the effect of these potential to be very small, too small to explain the observed enhancement at low transverse momenta. (7 figures, bill be send on request)Comment: 11 page

Effectively Transparent Front Contacts for Optoelectronic Devices

Effectively transparent front contacts for optoelectronic devices achieve a measured transparency of up to 99.9% and a measured sheet resistance of 4.8 Ω sq^(−1). The 3D microscale triangular cross-section grid fingers redirect incoming photons efficiently to the active semiconductor area and can replace standard grid fingers as well as transparent conductive oxide layers in optoelectronic devices

Boosting the Figure Of Merit of LSPR-based refractive index sensing by phase-sensitive measurements

Localized surface plasmon resonances possess very interesting properties for a wide variety of sensing applications. In many of the existing applications only the intensity of the reflected or transmitted signals is taken into account, while the phase information is ignored. At the center frequency of a (localized) surface plasmon resonance, the electron cloud makes the transition between in- and out-of-phase oscillation with respect to the incident wave. Here we show that this information can experimentally be extracted by performing phase-sensitive measurements, which result in linewidths that are almost one order of magnitude smaller than those for intensity based measurements. As this phase transition is an intrinsic property of a plasmon resonance, this opens up many possibilities for boosting the figure of merit (FOM) of refractive index sensing by taking into account the phase of the plasmon resonance. We experimentally investigated this for two model systems: randomly distributed gold nanodisks and gold nanorings on top of a continuous gold layer and a dielectric spacer and observed FOM values up to 8.3 and 16.5 for the respective nanoparticles

Boundary and Coulomb Effects on Boson Systems in High-Energy Heavy-Ion Collisions

The boundary of a boson system plays an important role in determining the momentum distribution of the bosons. For a boson system with a cylindrical boundary, the momentum distribution is enhanced at high transverse momenta but suppressed at low transverse momenta, relative to a Bose-Einstein distribution. The boundary effects on systems of massless gluons and massive pions are studied. For gluons in a quark-gluon plasma, the presence of the boundary may modify the signals for the quark-gluon plasma. For pions in a pion system in heavy-ion collisions, Coulomb final-state interactions with the nuclear participants in the vicinity of the central rapidity region further modify the momentum distribution at low transverse momenta. By including both the boundary effect and the Coulomb final-state interactions we are able to account for the behavior of the $\pi^{-}$ transverse momentum spectrum observed in many heavy-ion experiments, notably at low transverse momenta.Comment: 15 pages Postscript uuencoded tar-comprssed file, 9 Postscript figures uuencoded tar-compressed fil