Au nanorods-semiconductor nanowire hybrid nanostructures : nanofabrication techniques and optoelectronic properties

The objective of this thesis is the exploration and characterization of novel Au nanorod-semiconductor nanowire hybrid nanostructures. I provide a comprehensive bottom-up approach in which, starting from the synthesis and theoretical investigation of the optical properties of Au nanorods, I design, nanofabricate and characterize Au nanorods-semiconductor nanowire hybrid nanodevices with novel optoelectronic capabilities compared to the non-hybrid counterpart. In this regards, I first discuss the seed-mediated protocols to synthesize Au nanorods with different sizes and the influence of nanorod geometries and non-homogeneous surrounding medium on the optical properties investigated by theoretical simulation. Novel methodologies for assembling Au nanorods on (i) a Si/SiO2 substrate with highly-ordered architecture and (ii) on semiconductor nanowires with spatial precision are developed and optimized. By exploiting these approaches, I demonstrate that Raman active modes of an individual ZnO nanowire can be detected in non-resonant conditions by exploring the longitudinal plasmonic resonance mediation of chemical-synthesized Au nanorods deposited on the nanowire surface otherwise not observable on bare ZnO nanowire. Finally, nanofabrication and detailed electrical characterization of ZnO nanowire field-effect transistor (FET) and optoelectronic properties of Au nanorods - ZnO nanowire FET tunable near-infrared photodetector are investigated. In particular we demonstrated orders of magnitude enhancement in the photocurrent intensity in the explored range of wavelengths and 40 times faster time response compared to the bare ZnO FET detector. The improved performance, attributed to the plasmonicmediated hot-electron generation and injection mechanism underlying the photoresponse is investigated both experimentally and theoretically. The miniaturized, tunable and integrated capabilities offered by metal nanorodssemicondictor nanowire device architectures presented in this thesis work could have an important impact in many application fields such as opto-electronic sensors, photodetectors and photovoltaic devices and open new avenues for designing of novel nanoscale optoelectronic devices

Gate-controlled heat generation in ZnO nanowire FETs

Nanoscale heating production using nanowires has been shown to be particularly attractive for a number of applications including nanostructure growth, localized doping, transparent heating and sensing. However, all proof-of-concept devices proposed so far relied on the use of highly conductive nanomaterials, typically metals or highly doped semiconductors. In this article, we demonstrate a novel nanoheater architecture based on a single semiconductor nanowire field-effect transistor (NW-FET). Nominally undoped ZnO nanowires were incorporated into three-terminal devices whereby control of the nanowire temperature at a given source-drain bias was achieved by additional charge carriers capacitatively induced via the third gate electrode. Joule-heating selective ablation of poly(methyl methacrylate) deposited on ZnO nanowires was shown, demonstrating the ability of the proposed NW-FET configuration to enhance by more than one order of magnitude the temperature of a ZnO nanowire, compared to traditional two-terminal configurations. These findings demonstrate the potential of field-effect architectures to improve Joule heating power in nanowires, thus vastly expanding the range of suitable materials and applications for nanowire-based nanoheaters

Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure "workshop"

The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures by metalorganic vapour phase epitaxy, from dome and ring-like structures to double dot in a ring ensembles. Moreover, preliminary microphotoluminescence data are indicating the capped rings system as an interesting candidate for single quantum emitters at telecom wavelengths, potentially becoming a possible alternative to InAs QDs for quantum technology and telecom applications

Facile formation of ordered vertical arrays by droplet evaporation of Au nanorod organic solutions

Droplet evaporation is a simple method to induce organization of Au nanorods into ordered superstructures. In general, the self-assembly process occurs by evaporation of aqueous suspensions under strictly controlled experimental conditions. Here we present formation of large area ordered vertical arrays by droplet evaporation of Au nanorod organic suspensions. The uncontrolled (free air) evaporation of such suspensions yielded to formation of ordered nanorod domains covering the entire area of a 5 mm diameter droplet. Detailed investigation of the process revealed that nanorods organized into highly ordered vertical domains at the interface between solvent and air on a fast time scale (minutes). The self-assembly process mainly depended on the initial concentration of nanorod solution and required minimal control of other experimental parameters. Nanorod arrays displayed distinct optical properties which were analyzed by optical imaging and spectroscopy and compared to results obtained from theoretical calculations. The potential use of synthesized arrays as surface-enhanced Raman scattering probes was demonstrated with the model molecule 4-aminobenzenthiol

Hot-electron injection in Au nanorod-ZnO nanowire hybrid device for near-infrared photodetection

In this Letter, we present a new class of near-infrared photodetectors comprising Au nanorods-ZnO nanowire hybrid systems. Fabricated hybrid FET devices showed a large photoresponse under radiation wavelengths between 650 and 850 nm, accompanied by an "ultrafast" transient with a time scale of 250 ms, more than 1 order of magnitude faster than the ZnO response under radiation above band gap. The generated photocurrent is ascribed to plasmonic-mediated generation of hot electrons at the metal-semiconductor Schottky barrier. In the presented architecture, Au-nanorod-localized surface plasmons were used as active elements for generating and injecting hot electrons into the wide band gap ZnO nanowire, functioning as a passive component for charge collection. A detailed investigation of the hot electron generation and injection processes is discussed to explain the improved and extended performance of the hybrid device. The quantum efficiency measured at 650 nm was calculated to be approximately 3%, more than 30 times larger than values reported for equivalent metal/semiconductor planar photodetectors. The presented work is extremely promising for further development of novel miniaturized, tunable photodetectors and for highly efficient plasmonic energy conversion devices

Three-dimensional self-assembled columnar arrays of AlInP quantum wires for polarized micron-sized amber light emitting diodes

A three-dimensional ordered and self-organized semiconductor system emitting highly-polarized light in the yellow-orange visible range (580-650 nm) is presented, comprising self-assembled in-plane AlInP wires vertically stacked in regularly-spaced columns. More than 200 wires per column without detectable defect formation could be stacked. Theoretical simulations and temperature-dependent photoluminescence provided a benchmark to engineer multilayered structures showing internal quantum efficiency at room temperature larger than comparable quantum wells emitting at similar wavelengths. Finally, proof-of-concept light emitting diodes (LED) showed a high degree of light polarization and lower surface parasitic currents than comparable quantum well LEDs, providing an interesting perspective for high-efficiency polarized yellow-orange light emitting devices

InAs nanowire hot-electron Josephson transistor

At a superconductor (S)-normal metal (N) junction pairing correlations can "leak-out" into the N region. This proximity effect [1, 2] modifies the system transport properties and can lead to supercurrent flow in SNS junctions [3]. Recent experimental works showed the potential of semiconductor nanowires (NWs) as building blocks for nanometre-scale devices [4-7], also in combination with superconducting elements [8-12]. Here, we demonstrate an InAs NW Josephson transistor where supercurrent is controlled by hot-quasiparticle injection from normal-metal electrodes. Operational principle is based on the modification of NW electron-energy distribution [13-20] that can yield reduced dissipation and high-switching speed. We shall argue that exploitation of this principle with heterostructured semiconductor NWs opens the way to a host of out-of-equilibrium hybrid-nanodevice concepts [7, 21].Comment: 6 pages, 6 color figure

Structural and electronic properties of polycrystalline InAs thin films deposited on silicon dioxide and glass at temperatures below 500 °c

Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the films are reported, with electron mobilities of ~100 cm2/V·s achieved at room temperature, and values reaching 155 cm2/V·s for a heterostructure including the polycrystalline InAs film. Test structures fabricated with an aluminum oxide (Al2O3) top-gate dielectric show that transistor-type behavior is possible when poly InAs films are implemented as the channel material, with maximum ION/IOFF > 250 achieved at −50 °C and ION/IOFF = 90 at room temperature. Factors limiting the ION/IOFF ratio are investigated and recommendations are made for future implementation of this material

Manipulation of Electron Orbitals in Hard-Wall InAs/InP Nanowire Quantum Dots

We present a novel technique for the manipulation of the energy spectrum of hard-wall InAs/InP nanowire quantum dots. By using two local gate electrodes, we induce a strong transverse electric field in the dot and demonstrate the controlled modification of its electronic orbitals. Our approach allows us to dramatically enhance the single-particle energy spacing between the first two quantum levels in the dot and thus to increment the working temperature of our InAs/InP single-electron transistors. Our devices display a very robust modulation of the conductance even at liquid nitrogen temperature, while allowing an ultimate control of the electron filling down to the last free carrier. Potential further applications of the technique to time-resolved spin manipulation are also discussed

Hot-electron injection in Au nanorod-ZnO nanowire hybrid device for near-infrared photodetection

In this Letter, we present a new class of near-infrared photodetectors comprising Au nanorods-ZnO nanowire hybrid systems. Fabricated hybrid FET devices showed a large photoresponse under radiation wavelengths between 650 and 850 nm, accompanied by an "ultrafast" transient with a time scale of 250 ms, more than 1 order of magnitude faster than the ZnO response under radiation above band gap. The generated photocurrent is ascribed to plasmonic-mediated generation of hot electrons at the metal-semiconductor Schottky barrier. In the presented architecture, Au-nanorod-localized surface plasmons were used as active elements for generating and injecting hot electrons into the wide band gap ZnO nanowire, functioning as a passive component for charge collection. A detailed investigation of the hot electron generation and injection processes is discussed to explain the improved and extended performance of the hybrid device. The quantum efficiency measured at 650 nm was calculated to be approximately 3%, more than 30 times larger than values reported for equivalent metal/semiconductor planar photodetectors. The presented work is extremely promising for further development of novel miniaturized, tunable photodetectors and for highly efficient plasmonic energy conversion devices