Progress in and potential of liquid phase crystallized silicon solar cells

Liquid phase crystallization of silicon LPC Si offers great potential for high quality Si films and a cost effective fabrication technique for thin crystalline silicon solar cells on glass. In this work, we report on the progress on LPC silicon at HZB in the past years. Beginning with a brief description of the fabrication process, we summarize the work on the different contact systems developed for these absorbers before focusing on the interdigitated back contact architecture on which the highest efficiencies were reported. State of the art cells form the basis for a detailed discussion of the status of this technology. We investigate the current loss mechanisms and explore the potential for further improvement. Finally, based on this comprehensive quality assessment, we develop a roadmap to increase the cell efficiencies to wafer equivalent value

Facing the challenge of liquid phase crystallizing silicon on textured glass substrates

A major limitation in current liquid phase crystallized LPC silicon thin film record solar cells are optical losses caused by their planar glass silicon interface. In this study, silicon is grown on nanoimprinted periodically as well as on randomly textured glass substrates and successfully implemented into state of the art LPC silicon thin film solar cell stacks. By systematically varying every layer the whole sample stack is optimized regarding its anti reflection ability. Compared to an optimized planar reference device, a reduction of reflection losses by 3.5 absolute on the random and by 9.4 absolute on the periodic texture has been achieved in the wavelength range of interes

Potential of interdigitated back contact silicon heterojunction solar cells for liquid phase crystallized silicon on glass with efficiency above 14

Liquid phase crystallization of silicon LPC Si on glass is a promising method to produce high quality multi crystalline Si films with macroscopic grains. In this study, we report on recent improvements of our interdigitated back contact silicon heterojunction contact system IBC SHJ , which enabled open circuit voltages as high as 661 mV and efficiencies up to 14.2 using a 13 m thin n type LPC Si absorbers on glass. The influence of the BSF width on the cell performance is investigated both experimentally and numerically. We combine 1D optical simulations using GenPro4 and 2D electrical simulations using Sentaurus TCAD to determine the optical and electrical loss mechanisms in order to estimate the potential of our current LPC Si absorbers. The simulations reveal an effective minority carrier diffusion length of 26 m and further demonstrate that a doping concentration of 4 1016 cm 3 and a back surface field width of 60 m are optimum values to further increase cell efficiencie

Neutron-based analyses of three Bronze Age metal objects: a closer look at the Buggenum, Jutphaas and Escharen artefacts

Three important Bronze Age copper-alloy artefacts from the permanent exhibition of the National Museum of Antiquity in Leiden (NL) have been studied by neutron-based methods. These artefacts are known as the Buggenum sword, the Jutphaas dirk, and the Escharen double axe. All three objects have been studied with neutron resonance capture analysis (NRCA), a non-destructive method to determine the bulk elemental compositions. The Buggenum sword is also studied with time-of-flight neutron diffraction (TOF-ND) giving additional information about crystalline properties and internal material structures, and neutron tomography (NT), showing details of the construction of this sword and voids inside the material. The composition of the Jutphaas dirk is compared with the compositions of two other dirks belonging to the group of six Plougrescant-Ommerschans (PO) ceremonial dirks. The Escharen double axe, identified as being of the Zabitz type, variant Westeregeln, is a rare object in the Low Countries. It is compared to finds from Central Europe. The results for all three objects are discussed with regards to their archaeological contexts and their relation to other finds

Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films

A wide variety of liquid and solid phase crystallized silicon films are investigated in order to determine the performance limiting defect types in crystalline silicon thin-film solar cells. Complementary characterization methods, such as electron spin resonance, photoluminescence, and electron microscopy, yield the densities of dangling bond defects and dislocations which are correlated with the electronic material quality in terms of solar cell open circuit voltage. The results indicate that the strongly differing performance of small-grained solid and large-grain liquid phase crystallized silicon can be explained by intra-grain defects like dislocations rather than grain boundary dangling bonds. A numerical model is developed containing both defect types, dislocations and dangling bonds, describing the experimental results

Smooth anti reflective three dimensional textures for liquid phase crystallized silicon thin film solar cells on glass

Recently, liquid phase crystallization of thin silicon films has emerged as a candidate for thin film photovoltaics. On 10 amp; 956;m thin absorbers, wafer equivalent morphologies and open circuit voltages were reached, leading to 13.2 record efficiency. However, short circuit current densities are still limited, mainly due to optical losses at the glass silicon interface. While nano structures at this interface have been shown to efficiently reduce reflection, up to now these textures caused a deterioration of electronic silicon material quality. Therefore, optical gains were mitigated due to recombination losses. Here, the SMooth Anti Reflective Three dimensional SMART texture is introduced to overcome this trade off. By smoothing nanoimprinted SiOx nano pillar arrays with spin coated TiOx layers, light in coupling into laser crystallized silicon solar cells is significantly improved as successfully demonstrated in three dimensional simulations and in experiment. At the same time, electronic silicon material quality is equivalent to that of planar references, allowing to reach Voc values above 630 mV. Furthermore, the short circuit current density could be increased from 21.0 mA cm amp; 8722;2 for planar reference cells to 24.5 mA cm amp; 8722;2 on SMART textures, a relative increase of 18 . External quantum efficiency measurements yield an increase for wavelengths up to 700 nm compared to a state of the art solar cell with 11.9 efficiency, corresponding to a jsc, EQE gain of 2.8 mA cm amp; 8722;

Investigation of Thermal Stability Effects of Thick Hydrogenated Amorphous Silicon Precursor Layers for Liquid Phase Crystallized Silicon

The thermal stability of thick amp; 8776;4 amp; 8201; amp; 956;m plasma grown hydrogenated amorphous silicon a Si H layers on glass upon application of a rather rapid annealing step is investigated. Such films are of interest as precursor layers for laser liquid phase crystallized silicon solar cells. However, at least half day annealing at T amp; 8776;550 amp; 8201; C is considered to be necessary so far to reduce the hydrogen H content and thus avoid blistering and peeling during the crystallization process due to H. By varying the deposition conditions of a Si H, layers of rather different thermal stability are fabricated. Changes in the surface morphology of these a Si H layers are investigated using scanning electron microscopy and profilometry measurements. Hydrogen effusion, secondary ion mass spectrometry SIMS depth profiling, and Raman spectroscopy measurements are also carried out. In summary, amorphous silicon precursor layers are fabricated that can be heated within 30 amp; 8201;min to a temperature of 550 amp; 8201; C without peeling and major surface morphological changes. Successful laser liquid phase crystallization of such material is demonstrated. The physical nature of a Si H material stability instability upon application of rapid heating is studie

Silicon solar cells on glass with power conversion efficiency above 13 at thickness below 15 micrometer

Liquid phase crystallized silicon on glass with a thickness of 10 40 amp; 956;m has the potential to reduce material costs and the environmental impact of crystalline silicon solar cells. Recently, wafer quality open circuit voltages of over 650 mV and remarkable photocurrent densities of over 30 mA cm 2 have been demonstrated on this material, however, a low fill factor was limiting the performance. In this work we present our latest cell progress on 13 amp; 956;m thin poly crystalline silicon fabricated by the liquid phase crystallization directly on glass. The contact system uses passivated back side silicon hetero junctions, back side KOH texture for light trapping and interdigitated ITO Ag contacts. The fill factors are up to 74 and efficiencies are 13.2 under AM1.5 g for two different doping densities of 1 10 17 cm 3 and 2 10 16 cm 3 . The former is limited by bulk and interface recombination, leading to a reduced saturation current density, the latter by series resistance causing a lower fill factor. Both are additionally limited by electrical shading and losses at grain boundaries and dislocations. A small 1 0.1 cm 2 test structure circumvents limitations of the contact design reaching an efficiency of 15.9 clearly showing the potential of the technolog

Association between bone mineral density and autoantibodies in patients with rheumatoid arthritis

Objective Autoantibodies, such as anti-citrullinated protein antibodies (ACPAs), have been described as inducing bone loss in rheumatoid arthritis (RA), which can also be reflected by bone mineral density (BMD). We therefore examined the association between osteoporosis and autoantibodies in two independent RA cohorts.Methods Dual x-ray absorptiometry (DXA) of the lumbar spine and left hip was performed in 408 Dutch patients with early RA during 5 years of follow-up and in 198 Swedish patients with early RA during 10 years of follow-up. The longitudinal effect of ACPAs and other autoantibodies on several BMD measures was assessed using generalized estimating equations.Results In the Dutch cohort, significantly lower BMD at baseline was observed in ACPA-positive patients compared to ACPA-negative patients, with an estimated marginal mean BMD in the left hip of 0.92 g/cm(2) (95% confidence interval [95% CI] 0.91-0.93) versus 0.95 g/cm(2) (95% CI 0.93-0.97) (P = 0.01). In line with this, significantly lower Z scores at baseline were noted in the ACPA-positive group compared to the ACPA-negative group (estimated marginal mean Z score in the left hip of 0.18 [95% CI 0.08-0.29] versus 0.48 [95% CI 0.33-0.63]) (P < 0.01). However, despite clear differences at baseline, ACPA positivity was not associated with greater decrease in absolute BMD or Z scores over time. Furthermore, there was no association between BMD and higher levels of ACPAs or other autoantibodies (rheumatoid factor and anti-carbamylated protein antibodies). In the Swedish cohort, ACPA-positive patients tended to have a higher prevalence of osteopenia at baseline (P = 0.04), but again, ACPA positivity was not associated with an increased prevalence of osteopenia or osteoporosis over time.Conclusion The presence of ACPAs is associated with significantly lower BMD at baseline, but not with greater BMD loss over time in treated RA patients. These results suggest that ACPAs alone do not appear to contribute to bone loss after disease onset when disease activity is well-managed.Pathophysiology and treatment of rheumatic disease