Measuring Nuclear Spin Dependent Parity Violation With Molecules: Experimental Methods and Analysis of Systematic Errors

Nuclear spin-dependent parity violation (NSD-PV) effects in atoms and molecules arise from $Z^0$ boson exchange between electrons and the nucleus, and from the magnetic interaction between electrons and the parity-violating nuclear anapole moment. It has been proposed to study NSD-PV effects using an enhancement of the observable effect in diatomic molecules [D. DeMille $\textit{et al.}$, Phys. Rev. Lett. $\textbf{100}$, 023003 (2008)]. Here, we demonstrate measurements of this type with sensitivity surpassing that of any previous atomic PV measurement, using the test system ${^{138}\mathrm{Ba^{19}F}}$. We show that systematic errors associated with our technique can be suppressed to at least the level of the present statistical sensitivity. With $\sim\!170$ hours of data, we measure the matrix element, $W$, of the NSD-PV interaction with uncertainty $\delta W/(2\pi)<0.7$ Hz, for each of two configurations where $W$ must have different signs. This sensitivity would be sufficient to measure NSD-PV effects of the size anticipated across a wide range of nuclei.Comment: 25 pages, 15 figures, This longer article provides more details about our experimental techniques, measurement methods and analysis of the systematic uncertainty described briefly in the short version in arXiv:1801.0531

Laser scanning and data integration for three-dimensional digital recording of complex historical structures: The case of mevlana museum

Terrestrial laser scanning method is widely used in three-dimensional (3-D) modeling projects. Nevertheless it usually requires measurement data from other sources for full measurement of the shapes. In this study a 3-D model of the historical Mevlana Museum (Mevlana Mausoleum) in Konya, Turkey was created using state-of-the art measurement techniques. The building was measured by terrestrial laser scanner (TLS). In addition, some shapes of the indoor area were measured by a time-of-flight camera. Thus, a 3-D model of the building was created by combining datasets of all measurements. The point cloud model was created with 2.3 cm and 2.4 cm accuracy for outdoor and indoor measurements, and then it was registered to a georeferenced system. In addition a 3-D virtual model was created by mapping the texture on a mesh derived from the point cloud

Effect of post-deposition annealing on the electrical properties of B-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition

Cataloged from PDF version of article.Ga2O3 dielectric thin films were deposited on (111)-oriented p-type silicon wafers by plasma-enhanced atomic layer deposition using trimethylgallium and oxygen plasma. Structural analysis of the Ga 2O3 thin films was carried out using grazing-incidence x-ray diffraction. As-deposited films were amorphous. Upon postdeposition annealing at 700, 800, and 900°C for 30min under N2 ambient, films crystallized into β-form monoclinic structure. Electrical properties of the β-Ga2O3 thin films were then investigated by fabricating and characterizing Al/β-Ga2O3/p-Si metal-oxide-semiconductor capacitors. The effect of postdeposition annealing on the leakage current densities, leakage current conduction mechanisms, dielectric constants, flat-band voltages, reverse breakdown voltages, threshold voltages, and effective oxide charges of the capacitors were presented. The effective oxide charges (Qeff) were calculated from the capacitance-voltage (C-V) curves using the flat-band voltage shift and were found as 2.6×1012, 1.9×1012, and 2.5×10 12 cm-2 for samples annealed at 700, 800, and 900°C, respectively. Effective dielectric constants of the films decreased with increasing annealing temperature. This situation was attributed to the formation of an interfacial SiO2 layer during annealing process. Leakage mechanisms in the regions where current increases gradually with voltage were well fitted by the Schottky emission model for films annealed at 700 and 900°C, and by the Frenkel-Poole emission model for film annealed at 800°C. Leakage current density was found to improve with annealing temperature. β-Ga2O3 thin film annealed at 800°C exhibited the highest reverse breakdown field value. © 2014 American Vacuum Society

Electrical characteristics of B-GaN2O3 thin films grown by PEALD

Cataloged from PDF version of article.In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (111) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O3 thin films were annealed under N-2 ambient at 600, 700, and 800 degrees C to obtain beta-phase. The structure and microstructure of the beta-Ga2O3 thin films was carried out by using grazing-incidence X-ray diffraction (GIXRD). To show effect of annealing temperature on the microstructure of beta-Ga2O3 thin films, average crystallite size was obtained from the full width at half maximum (FWHM) of Bragg lines using the Scherrer formula. It was found that crystallite size increased with increasing annealing temperature and changed from 0.8 nm to 9.1 nm with annealing. In order to perform electrical characterization on the deposited films, Al/beta-Ga2O3/p-Si metal-oxide-semiconductor (MOS) type Schottky barrier diodes (SBDs) were fabricated using the beta-Ga2O3 thin films were annealed at 800 degrees C. The main electrical parameters such as leakage current level, reverse breakdown voltage, series resistance (R-S), ideality factor (n), zero-bias barrier height (phi(Bo)), and interface states (N-SS) were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The RS values were calculated by using Cheung methods. The energy density distribution profile of the interface states as a function of (E-SS-E-V) was obtained from the forward bias I-V measurements by taking bias dependence of ideality factor, effective barrier height (phi(e)), and R-S into account. Also using the Norde function and C-V technique, phi(e) values were calculated and cross-checked. Results show that beta-Ga2O3 thin films deposited by PEALD technique at low temperatures can be used as oxide layer for MOS devices and electrical properties of these devices are influenced by some important parameters such as NSS, RS, and beta-Ga2O3 oxide layer. (C) 2014 Elsevier B.V. All rights reserved

Die Bedeutung der Versicherungswirtschaft in Nordrhein-Westfalen - Teil 2: Spartenspezifische Betrachtung der Versicherungsindustrie als Risikoträger und Kapitalanleger sowie weitere Aspekte

Die private Versicherungswirtschaft ist sowohl für jeden Einzelnen als auch für eine Gesellschaft insgesamt sehr wichtig. Die Übernahme von privaten, unternehmerischen und gesellschaftlichen Risiken durch die private Versicherungswirtschaft dient der Stabilisierung der einzel- und gesamtwirtschaftlichen Entwicklung. Im internationalen Vergleich sind die Geschäftspotenziale der deutschen privaten Versicherungswirtschaft aufgrund der unverändert großen Bedeutung der Sozialversicherung einerseits limitiert. Auf der anderen Seite können Geschäftsmodelle privater Versicherungsunternehmen für die Bewältigung zukünftiger gesellschaftlicher Herausforderungen weiter an Bedeutung gewinnen. Gemessen an den weltweit erwirtschafteten Prämien des Jahres 2009 belegt die deutsche Versicherungswirtschaft den fünften Platz mit einem Weltmarktanteil in Höhe von 5,86%. Etwa 1,79% des weltweiten Prämienvolumens wird von nordrhein-westfälischen Versicherungsunternehmen erwirtschaftet. Somit stellt die nordrhein-westfälische Versicherungswirtschaft nicht nur im Bundesland selber eine Schlüsselindustrie dar, sondern nimmt auch international eine bedeutende Rolle ein

Utilization of Water Hyacinth and Banana Wastes Compost in Reclamation of Sandy Soils for Increasing Growth, Yield of Cowpea

Pot experiments were carried out in the greenhouse of the Faculty of Agriculture, Fayoum University, to study the effect of water hyacinth and banana wastes compost (0, 10, 15 and 20 ton/fed) combined with inorganic nitrogenous fertilizers namely ammonium sulphate, ammonium nitrate and urea (in the rate of 60 kg N/Fed and this rate was 50% of the recommended dose), on the growth, yield and nutrient content of cowpea plants. All pots received P and K as recommended. The addition of various rates of water hyacinth and banana wastes composts (H.B.C.) under study significantly increased all plant growth parameters under the study, i.e., plant height, plant fresh weight and dry weight of both shoots and roots, the number of root nodules as well as the nutrient content of the different plant organs compared with the control and the chemical fertilizer application of the recommended dose (100%). There was a marked increase in pod characters, yield and its components, i.e., number of pods per plant, length, diameter and weight of pods per plant. The highest values of growth characters of yield and its components and the contents of nutrient elements were noticed when applying compost at the higher rates (20 ton/fed.) followed by 15 and 10 ton/fed., in a descending order as compared with the control. The best combination of nitrogen forms and the compost is considered to be one of the primary factors for high yield production and quality as well as yield components of cowpea. The highest significant increase in growth characters, yield and yield components, as well as the total carbohydrates and crude protein content of the seeds, were obtained via the application of compost in combination with ammonium sulphate at the rate of 20 ton/fed

Contesting Philosophical Secularism: The Case for Pluralist Secularism

Religion, Law and the Politics of Ethical Diversity: Conscientious Objection and Contestation of Civil Norms / Editors:Claude Proeschel, David Koussens, Francesco Piraino -- Taylor and Francis -- ISBN:978-100037252-6, 978-036767377-2 -- 2021.This chapter identifies the failures of philosophical secularism to undermine religiously sanctioned normative systems in motivating everyday life. It explores a conception of pluralist secularism, which aims to achieve a normative reconciliation of the potentially conflicting concepts of secular statehood and public religious presence. Philosophical secularism has been the most prominent model of secularism experienced – often coercively imposed – in Muslim societies. The principle of state neutrality towards religion has also been used as “a technology of modern governance that ensures the state’s sovereign right to regulate all domains of social life, a necessary part of which is religion”. Critical religion theorists such as Talal Asad and Saba Mahmood argue that the liberal conception of religion is individualistic, Protestant-centric and aesthetic/spiritual and marginalises other religions that do not go through the same formation of secular modernity,

Physical, mechanical and chemical properties of plums (cv. Santa rosa) affected by aminoethoxyvinylglycine applications

Background: The engineering properties (physical, mechanical and chemical) are importance to postharvest technologies of the agricultural materials. To plum fruits quality, the harvest and postharvest applications, the engineering properties of plum fruits should be considered. The effect of AVG  (Aminoethoxyvinylglycine) treatments on some physical, mechanical and chemical properties of plum fruits (cv. Santa Rosa) were determined.Materials and Methods: For this research, the plant material ‘Santa Rosa’ plum (Prunus salicina L.) fruits were obtained in Tokat/Turkey (39o51' N and 40o55' E), in 2012. AVG treatments were as 0 mg L-1, 100 mg L-1 and 200 mg L-1, and three different harvest dates including 25 July, 1 August and 7 August were used.Results: The geometric mean diameter, volume of fruit and surface area values increased with AVG doses, whereas, fruit density decreased as AVG doses increased. L* and b* values decreased from 43.75 to 24.14 and 20.24 to 13.21, whereas, a* value increased from -9.03 to -2.63 for flesh plum, respectively. The fruit removal force of plum fruit increased from 19.09 N to 20.20 N in magnitude with an increase in AVG doses. The friction coefficients of fruits increased as AVG doses increased and harvest dates. Total soluble solids content was higher in AVG-0 (0 mg L-1) as compared to AVG-1 and AVG-2 (100 mg L-1 and 200 mg L-1) AVG-2 applications, whereas, pH and titratable acidity were lower in 200 mg L-1 as compared to 0 mg L-1 and 100 mg L-1 treatments.Conclusion: Post-harvest technological applications of the plum fruits must be designed by taking  criteria into consideration for plum engineering properties.Key words: Color, friction coefficient, fruit removal force, firmnes