Approaching the precursor nuclei of the third r-process peak with RIBs

The rapid neutron nucleosynthesis process involves an enormous amount of very exotic neutron-rich nuclei, which represent a theoretical and experimental challenge. Two of the main decay properties that affect the final abundance distribution the most are half-lives and neutron branching ratios. Using fragmentation of a primary 238U beam at GSI we were able to measure such properties for several neutron-rich nuclei from 208Hg to 218Pb. This contribution provides a short update on the status of the data analysis of this experiment, together with a compilation of the latest results published in this mass region, both experimental and theoretical. The impact of the uncertainties connected with the eta-decay rates and with beta-delayed neutron emission is illustrated on the basis of r-process network calculations. In order to obtain a reasonable reproduction of the third r-process peak, it is expected that both half-lives and neutron branching ratios are substantially smaller, than those based on FRDM+QRPA, commonly used in r-process model calculations. Further measurements around N 126 are required for a reliable modelling of the underlying nuclear structure, and for performing more realistic r-process abundance calculations.Postprint (published version

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

An n(++)-GaAs/p(++)-AlGaAs tunnel junction with a peak current density of 10 100Acm(-2) is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500Acm(-2) and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations

Physics Reach of Electron-Capture Neutrino Beams

To complete the picture of neutrino oscillations two fundamental parameters need to be measured, theta13 and delta. The next generation of long baseline neutrino oscillation experiments -superbeams, betabeams and neutrino factories- indeed take aim at measuring them. Here we explore the physics reach of a new candidate: an electron-capture neutrino beam. Emphasis is made on its feasibility thanks to the recent discovery of nuclei that decay fast through electron capture, and on the interplay with a betabeam (its closest relative).Comment: 5 pages, 3 png figures. Talk given at the 7th International Workshop on Neutrino Factories and Superbeams (NuFact 05), Frascati, Italy, June 200

Nanoscale electrical characterization of arrowhead defects in GalnP thin films grown on Ge

In this work the authors present an electrical characterization of the so called arrowhead defects (ADs) in GaInP thin films grown on Ge(100) substrates misoriented by 6° toward (111). The samples have been evaluated by means of conductive atomic force microscopy (C-AFM) and Kelvin probe force microscopy (KPFM). It is shown that the ADs have terminating planes which are composed from two alternating subplanes inclined 12° (close to {105} plane) and 6° (close to {109}) with respect to the (100) plane. The terminating planes of the arrowhead defects possess higher conductivity compared to their surrounding. The terminating planes differ also in their electrical behavior from each other, demonstrating different values of conductivity (C-AFM) and bucking voltages (KPFM). The difference in current densities between two terminating planes was found to be ∼ 170±35 μA/m2 at −3 V, and the difference in the bucking voltages was ∼ 70 mV at 5 V of the electrical excitation signal in the lift mode. It is suggested that the distinctive electrical behavior of the ADs is caused by an ordering effect which leads in this case to the degraded electrical properties of the ADs

Influence of GaInP ordering on the electronic quality of concentrator solar cells

The ordering phenomenon produces a reduction in the band gap of the GaInP material. Though a drawback for many optoelectronic applications, ordering can be used as an additional degree of material and device engineering freedom. The performance of the record efficiency GaInP/GaAs/Ge multijunction solar cells depends on the quality and design of the GaInP top cell, which can be affected also by ordering. The tradeoff existing between band gap and minority carrier properties, and the possibility of creating a back surface field (BSF) structure based on an order–disorder GaInP heterostructure makes the study of the ordering appealing for solar cell applications. In this work, the ordering dependency with the growth conditions and substrate orientation is studied. The results obtained are presented to enrich and extend the data available in the literature. Then the properties of order–disorder GaInP heterostructures are assessed by using them as BSF in GaInP concentrator solar cells. The external quantum efficiency (EQE) shows a good behavior of these BSF layers, but unexpectedly poor electronic quality in the active layers. Although the exact origin of this problem remains to be known, it is attributed to traps introduced by the ordered/disordered domains matrix or growth native defects. EQE measurements with bias light show a recovery of the minority carrier properties, presumably due to the saturation of the traps

πNN\pi NN coupling determined beyond the chiral limit

Within the conventional QCD sum rules, we calculate the $\pi NN$ coupling constant, $g_{\pi N}$, beyond the chiral limit using two-point correlation function with a pion. We consider the Dirac structure, $i\gamma_5$, at $m_\pi^2$ order, which has clear dependence on the PS and PV coupling schemes for the pion-nucleon interactions. For a consistent treatment of the sum rule, we include the linear terms in quark mass as they constitute the same chiral order as $m_\pi^2$. Using the PS coupling scheme for the pion-nucleon interaction, we obtain $g_{\pi N}=13.3\pm 1.2$, which is very close to the empirical $\pi NN$ coupling. This demonstrates that going beyond the chiral limit is crucial in determining the coupling and the pseudoscalar coupling scheme is preferable from the QCD point of view.Comment: 8 pages, revtex, some errors are corrected, substantially revise

As revoltas árabes e a democracia no mundo

Desde Kant que sabemos como a natureza dos regimes importa para a segurança internacional e como os povos “republicanos” tendem a ser mais pacíficos do que aqueles que vivem sob regimes despóticos ou autoritários. Nesse sentido, pode dizer-se que o estudo das mudanças políticas e o acompanhamento da evolução dos regimes nas várias regiões do globo é crucial para a análise das tendências e das ameaças e riscos à segurança nacional, e como tal inserem-se na missão do Instituto da Defesa Nacional (IDN). Foi justamente por isso que o IDN lançou uma linha de investigação sobre este tema e que, no dia 26 de Abril de 2012, organizou um seminário internacional intitulado “As Revoltas Árabes e a Democracia no Mundo”, com painéis sobre transições democráticas, a situação no mundo árabe e a promoção da democracia. O seminário contou com a intervenção de altos funcionários, antigos responsáveis políticos e académicos especializados em processos de democratização e na análise do mundo árabe e do Médio Oriente. Alguns desses oradores deixaram-nos ou enviaram-nos contributos escritos. São precisamente esses contributos que aqui se reúnem

Back contacted emitter GaAs solar cells

A new device structure to improve the performance of concentrator GaAs solar cells is described and the first experimental results are reported. The reason for such an improvement relies on a drastic reduction of the shadowing and series resistance losses based on the possibility of back contacting the emitter region of the solar cell. The experimental results obtained with devices of these types, with a simplified structure, fabricated by liquid phase epitaxy, demonstrate the feasibility and correct operation of the proposed back contact of the emitter of the cells