Fabrication of β-Silicon Carbide Nanowires from Carbon Powder and Silicon Wafer

β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires

Direct synthesis of β-silicon carbide nanowires from graphite only without a catalyst

One-dimensional (1D) β-SiC nanowires were successfully fabricated on bare Si (1 0 0) substrate using simple carbo-thermal evaporation of graphite at 1200 °C. The obtained β-SiC nanowires were aligned with diameters ranged between 40 and 500 nm. The majority of crystal planes were β-SiC (1 1 1) with other less intensity of (2 0 0), (2 2 0) and (3 1 1). The silicon substrate location inside the furnace found to be critical in the formation of the β-SiC nanowires. Also, introducing oxygen gas as an ambient gas instead of argon reduces the growth at locations close to the graphite source