93 research outputs found

    Hvordan kan pedagogisk leder arbeide for Ă„ legge til rette for medvirkning for de yngstebarna i overgangssituasjoner.

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    Denne bacheloroppgaven handler om hvordan pedagogiske ledere arbeider med yngstebarnas medvirkning i overgangssituasjoner. Forfatteren anvendte to kvalitative forskningsmetoder, intervjuer og observasjoner, for Ä samle empirisk data og besvare forskningsspÞrsmÄlet fra to kandidater i to forskjellige stillinger pÄ samme smÄbarns avdeling; en pedagogisk leder og en assistent. Problemstillingen som jeg sÞker Ä besvare er «Hvordan kan pedagogisk leder arbeide for Ä legge til rette for medvirkning for de yngstebarna i overgangssituasjoner». Et av kjernefunnene i denne oppgaven er at overgangssituasjoner som gir litt rom for medvirkning, skaper betingelser for motstand hos de yngstebarna. En fleksibel respons til yngstebarnas motstand og personalets bevegelige praksiser fÞrer til Þkt tillit til de veiledende voksne. Yngstebarn utvikler tÄlmodighet og fleksibilitet i overgangssituasjoner, og opplever at deres ytringer har innflytelse, noe som gir en varig positiv effekt til relasjoner mellom veilederen (voksen) og barn. Tvert imot pÄpeker funnene at en ikke fleksibel respons gir klare tegn for asymmetriske relasjoner og maktutÞvelse, og mangel av medvirkning. Dette kan fÞre til yngstebarnas behov for sterkere motstand. Barnas motstand er en naturlig reaksjon til kravet som stilles og et ubevisst signal for behov for mer medvirkning i overgangssituasjoner. Veilederes manglende evne til Ä anerkjenne barnas behov og tilrettelegge for medvirkning, kan resultere i brudd av tilliten til veilederen. Yngstebarna kan bli utÄlmodige, og overveldet av vanskelige fÞlelser i overgangssituasjoner. Slike opplevelser kan prege relasjoner pÄ en varig negativ mÄte. Teoridelen viser til arbeidsmÄter som pedagogisk leder kan ta i bruk, for Ä oppnÄ en balansert praksis som fremmer yngstebarnas ytringer og bygger tillitsfulle relasjoner, samt utvikle en pÄvirkningskraft for resten av personalet, uten Ä utÞve makt. Det er ikke bare pedagogisk leder, men hele personalet i barnehagen kan dra nytte av den nye kunnskapen om yngstebarnas medvirkning i overgangssituasjoner for Ä realisere begrepet, reflektere rundt egen praksisen og skape bedre overgangssituasjoner for de yngstebarna.This bachelor's thesis explores how pedagogical leaders in early childhood education facilitate participation for the youngest children in transition situations that occur in kindergarten. The author used qualitative research methods, including interviews and observations, to gather empirical data and answer the research question. The study found that transition situations that limit participation can lead to resistance in youngest children and create asymmetrical power dynamics. However, a flexible response and flexible practices by staff can increase trust in the adults and improve the child's patience and flexibility in transition situations. The study also suggests that recognizing and meeting the needs of youngest children in transition situations is crucial for maintaining trust and positive relationships with adults. The theory section of the thesis offers guidance for pedagogical leaders on how to promote youngest children's expressions and build trusting relationships without exercising power. It is not only pedagogical leaders, but all staff in the kindergarten who can benefit from the new knowledge about youngest children's participation in transition situations to realize the concept, reflect on their practice, and create better transition situations for youngest children

    The Role of Family Resilience on Parental Well-Being and Resilience Levels

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    Family well-being, conceptualized as the interaction between family members’ mental, physical health and psychological resilience, and family resilience, is crucial for the optimal functioning of the family unit. However, most research investigating the relationship between family resilience and psychological outcomes has focused on children instead of parents and no relevant research in the general Greek population has been conducted so far. Therefore, a sample of 83 Greek parents was recruited and the relationship of family resilience with parental well-being and parental resilience was examined. In addition, differences in the aforesaid constructs between mothers and fathers were explored. Results indicated that parents, who reported higher levels of coping strategies in terms of family resilience, were more likely to report higher levels of well-being and psychological resilience. Nevertheless, no significant differences in family resilience, parental well-being, and parental resilience between mothers and fathers were identified. Methodological limitations and future recommendations were discussed

    D7.2 - Report on first External Liaisons Workshop

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    This deliverable provides a report on the "2nd International Workshop on Interoperability and Open Source Solutions for the Internet of Things”, co-located with the IoT 2016 conference, in Stuttgart, Germany, on November 7, 2016

    Oxygen-vacancy induced ferroelectricity in nitrogen-doped nickel oxide

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    This paper reports the onset of ferroelectricity in NiO by breaking the crystallographic symmetry with oxygen vacancies created by N doping. Nitrogen-doped NiO was grown at room temperature by RF sputtering of Ni target in Ar–O2–N2 plasma on silicon and fused silica substrates. The impact of the nitrogen doping of NiO on microstructural, optical, and electrical properties has been investigated. According to x-ray diffraction investigations, by increasing the N doping level in NiO, a transition from (002) to a (111) preferential orientation for the cubic NiO phase was observed, as well as a lattice strain relaxation, that is usually ascribed to structural defect formation in crystal. The x-ray diffraction pole figures the presence of a distorted cubic structure in NiO and supports the Rietveld refinement findings related to the strain, which pointed out that nitrogen doping fosters lattice imperfections formation. These findings were found to be in agreement with our far-infrared measurements that revealed that upon nitrogen doping a structural distortion of the NiO cubic phase appears. X-ray photo-emission spectroscopy measurements reveal the presence of oxygen vacancies in the NiO film following nitrogen doping. Evidence of ferro-electricity in nitrogen-doped NiO thin films has been provided by using the well-established Sawyer–Tower method. The results reported here provide the first insights on oxygen-vacancy induced ferroelectricity in nitrogen-doped nickel oxide thin films

    Transparent all-oxide hybrid NiON/TiO2 heterostructure for optoelectronic applications

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    Nickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) thin films with enhanced properties compared to those of the undoped NiO thin film. The NiO:N films were grown at room temperature by sputtering using a plasma containing 50% Ar and 50% (O2 + N2) gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, having a transmittance of less than 20%. Upon doping with nitrogen, the films became more transparent (around 65%), had a wide direct band gap (up to 3.67 eV) and showed clear evidence of indirect band gap, 2.50–2.72 eV, depending on %(O2-N2) in plasma. The changes in the properties of the films such as structural disorder, energy band gap, Urbach states and resistivity were correlated with the incorporation of nitrogen in their structure. The optimum NiO:N film was used to form a diode with spin-coated, mesoporous on top of a compact, TiO2 film. The hybrid NiO:N/TiO2 heterojunction was transparent showing good output characteristics, as deduced using both I-V and Cheung’s methods, which were further improved upon thermal treatment. Transparent NiO:N films can be realized for all-oxide flexible optoelectronic devices

    An assessment of sputtered nitrogen-doped nickel oxide for all-oxide transparent optoelectronic applications: The case of hybrid NiO:N/TiO2 heterostructure

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    ransition metal oxides present a unique category of materials due to their versatile optical, electrical and mechanical properties. Nickel oxide (NiO) is an intrinsic p-type oxide semiconductor. P-NiO with controllable and reproducible physico-chemical properties, if combined with transparency and low temperature (low-T) fabrication processes, can be fully exploited in many transparent and/or flexible devices for applications, like energy management (production, manipulation, storage), sensing, wearable and health care electronics, etc. Reproducibility, transparency and low-T fabrication processes of p-type NiO are the motivation of this work. Nitrogen is one of the dopants used for modifying the properties of NiO. Until now, nitrogen-doped NiO, has shown inferior properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) thin films with enhanced properties compared to those of the undoped NiO. The NiO:N films were grown by sputtering on room-temperature substrates in plasma containing 50% Ar and 50% (O2+N2) gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, having transmittance less than 20%. Upon doping with nitrogen, the films became more transparent (around 65%), had a wide direct band gap (up to 3.67 eV) and showed clear evidence of indirect band gap, 2.50-2.72 eV, depending on %(O2-N2) in plasma. The changes in the properties of the films such as structural disorder, energy band gap, Urbach states and resistivity were correlated with the incorporation of nitrogen in their structure. The optimum NiO:N film was used to form a diode with spin-coated, mesoporous on top of a compact, TiO2 film. The hybrid NiO:N/TiO2 heterojunction was transparent showing good output characteristics, as deduced using both I-V and Cheung’s methods. The diode’s transparency and characteristics were further enhanced upon thermal treatment and this was attributed to improved NiO:N properties with annealing. Transparent NiO:N films can be realized for all-oxide flexible optoelectronic devices
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