7 research outputs found

    Tuning domain wall velocity with Dzyaloshinskii-Moriya interaction

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    We have studied a series of Pt/Co/M epitaxial trilayers, in which Co is sandwiched between Pt and a non magnetic layer M (Pt, Ir, Cu, Al). Using polar magneto-optical Kerr microscopy, we show that the field- induced domain wall speeds are strongly dependent on the nature of the top layer, they increase going from M=Pt to lighter top metallic overlayers, and can reach several 100 m/s for Pt/Co/Al. The DW dynamics is consistent with the presence of chiral N\'eel walls stabilized by interfacial Dzyaloshinskii-Moriya interaction (DMI) whose strength increases going from Pt to Al top layers. This is explained by the presence of DMI with opposite sign at the Pt/Co and Co/M interfaces, the latter increasing in strength going towards heavier atoms, possibly due to the increasing spin-orbit interaction. This work shows that in non-centrosymmetric trilayers the domain wall dynamics can be finely tuned by engineering the DMI strength, in view of efficient devices for logic and spitronics applications.Comment: 5 pages, 4 Figure

    Thermally activated processes for ferromagnet intercalation in graphene-heavy metal interfaces

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    The development of graphene (Gr) spintronics requires the ability to engineer epitaxial Gr heterostructures with interfaces of high quality, in which the intrinsic properties of Gr are modified through proximity with a ferromagnet to allow for efficient room temperature spin manipulation or the stabilization of new magnetic textures. These heterostructures can be prepared in a controlled way by intercalation through graphene of different metals. Using photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM), we achieve a nanoscale control of thermally activated intercalation of a homogeneous ferromagnetic (FM) layer underneath epitaxial Gr grown onto (111)-oriented heavy metal (HM) buffers deposited, in turn, onto insulating oxide surfaces. XPS and STM demonstrate that Co atoms evaporated on top of Gr arrange in 3D clusters and, upon thermal annealing, penetrate through and diffuse below Gr in a 2D fashion. The complete intercalation of the metal occurs at specific temperatures, depending on the type of metallic buffer. The activation energy and the optimum temperature for the intercalation processes are determined. We describe a reliable method to fabricate and characterize in situ high-quality Gr-FM/HM heterostructures, enabling the realization of novel spin-orbitronic devices that exploit the extraordinary properties of GrThis research was supported by the Regional Government of Madrid through projects P2018/NMT-4321 (NANOMAGCOST-CM) and P2018/NMT-4511 (NMAT2D) and by the Spanish Ministry of Economy and Competitiveness (MINECO) through projects RTI2018-097895-B-C42, FIS2016-78591-C3-1-R, PGC2018-098613-B-C21, PGC2018-093291-B-I00, FIS2015-67367-C2-1-P, and PCIN-2015-111 (FLAGERA JTC2015 Graphene Flagship “SOgraph”). IFIMAC acknowledges support from the ″Maria de Maeztu″ programme for units of Excellence in R&D (MDM-2014-0377). IMDEA Nanoscience is supported by the “Severo Ochoa” programme for the Centres of Excellence in R&D, MINECO (grant number SEV-2016-0686

    Large Anisotropic Magnetoresistance in La 0.7 Sr 0.3 MnO 3 Films at Room Temperature

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    International audienceThe magnetoresistance (MR) effect is widely used in technologies that pervade the world, from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in materials depending on the specific system and measuring configuration. Half-metallic manganites hold promise for spintronic applications but the complexity of competing interactions has not permitted the understanding and control of their magnetotransport properties to enable the realization of their technological potential. This study reports on the ability to induce a dominant switchable magnetoresistance in La 0.7 Sr 0.3 MnO 3 epitaxial films at room temperature (RT). By engineering an extrinsic magnetic anisotropy, a large enhancement of anisotropic magne-toresistance (AMR) is achieved which at RT leads to signal changes much larger than the other contributions such as the colossal magnetoresist-ance. The dominant extrinsic AMR exhibits large variation in the resistance in low field region, showing high sensitivity to applied low magnetic fields. These findings have a strong impact on the real applications of manganite-based devices for the high-resolution low field magnetic sensors or spintronics

    Large perpendicular magnetic anisotropy in nanometer-thick epitaxial graphene/co/heavy metal heterostructures for spin-orbitronics devices

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    Nanometer-thick epitaxial Co films intercalated between graphene (Gr) and a heavy metal (HM) substrate are promising systems for the development of spin-orbitronic devices due to their large perpendicular magnetic anisotropy (PMA). A combination of theoretical modeling and experiments reveals the origin of the PMA and explains its behavior as a function of the Co thickness. High quality epitaxial Gr/Co-n/HM(111) (HM = Pt,Ir) heterostructures are grown by intercalation below graphene, which acts as a surfactant that kinetically stabilizes the pseudomorphic growth of highly perfect Co face-centered tetragonal (fct) films, with a reduced number of stacking faults as the only structural defect observable by high-resolution scanning transmission electron microscopy (STEM). Magneto-optic Kerr effect (MOKE) measurements show that such heterostructures present PMA up to large Co critical thicknesses of about 4 nm (20 ML) and 2 nm (10 ML) for Pt and Ir substrates, respectively. X-ray magnetic circular dichroism (XMCD) measurements show an inverse power law of the anisotropy of the orbital moment with Co thickness, reflecting its interfacial nature, that changes sign at about the same critical values. First principles calculations show that, regardless of the presence of graphene, ideal Co fct films on HM buffers do not sustain PMAs beyond around 6 mLs due to the in-plane contribution of the inner bulk-like Co layers. The large experimental critical thicknesses sustaining PMA can only be retrieved by the inclusion of structural defects that promote a local hcp stacking such as twin boundaries or stacking faults. Remarkably, a layer resolved analysis of the orbital momentum anisotropy reproduces its interfacial nature, and reveals that the Gr/Co interface contribution is comparable to that of the Co/Pt(Ir).Financial support from MINECO (Grant Nos. RTI2018-097895-B-C41, RTI2018-097895-BC42 and RTI2018-097895-B-C43 (FUN-SOC), PID2019- 103910GB-I00, FIS2016-78591-C3-1-R and FIS2016-78591- C3-2-R (SKYTRON), PGC2018-098613-B-C21 (SpOrQuMat), PCI2019-111908-2 and PCI2019-111867-2 (FLAGERA 3 grant SOgraphMEM)], from Regional Government of Madrid (grant number P2018/NMT-4321 (NANOMAGCOST-CM)) and from Gobierno Vasco-UPV/EHU (grant numbers GIU18/138 and IT-1246-19). We acknowledge experiments at ALBA BL29 via proposal no. 2019023333. IMDEA-Nanociencia acknowledges support from the “Severo Ochoa” Program for Centres of Excellence in R&D (MINECO, Grant SEV-2016-0686

    Unraveling Dzyaloshinskii–Moriya Interaction and Chiral Nature of Graphene/Cobalt Interface

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    10 pages, 6 figuresInternational audienceA major challenge for future spintronics is to develop suitable spin transport channels with long spin lifetime and propagation length. Graphene can meet these requirements, even at room temperature. On the other side, taking advantage of the fast motion of chiral textures, i.e., N\'eel-type domain walls and magnetic skyrmions, can satisfy the demands for high-density data storage, low power consumption and high processing speed. We have engineered epitaxial structures where an epitaxial ferromagnetic Co layer is sandwiched between an epitaxial Pt(111) buffer grown in turn onto MgO(111) substrates and a graphene layer. We provide evidence of a graphene-induced enhancement of the perpendicular magnetic anisotropy up to 4 nm thick Co films, and of the existence of chiral left-handed N\'eel-type domain walls stabilized by the effective Dzyaloshinskii-Moriya interaction (DMI) in the stack. The experiments show evidence of a sizeable DMI at the gr/Co interface, which is described in terms of a conduction electron mediated Rashba-DMI mechanism and points opposite to the Spin Orbit Coupling-induced DMI at the Co/Pt interface. In addition, the presence of graphene results in: i) a surfactant action for the Co growth, producing an intercalated, flat, highly perfect fcc film, pseudomorphic with Pt and ii) an efficient protection from oxidation. The magnetic chiral texture is stable at room temperature and grown on insulating substrate. Our findings open new routes to control chiral spin structures using interfacial engineering in graphene-based systems for future spin-orbitronics devices fully integrated on oxide substrates

    Poster session III * Friday 10 December 2010, 08:30-12:30

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