Experimental studies on vacancy induced ferromagnetism in undoped TiO2

Room temperature ferromagnetism is observed in undoped TiO2 films deposited on Si substrates using pulsed laser deposition (PLD). The ferromagnetic properties of the samples depend on the oxygen partial pressure during the PLD synthesis. The appearance of higher binding energy component (HBEC) in the oxygen 1s core peak from x-ray photoelectron spectroscopy (XPS) suggests the presence of oxygen vacancies in these samples. The amount of oxygen during the synthesis determines the vacancy concentration in the samples which is directly related to the magnetic behavior of the samples. The magnetic moment decreases with oxygen vacancy concentration in the samples. Valence band measurements were performed to study the electronic structure of both stoichometric and reduced TiO2. The analyses show the presence of Ti 3d band near the Fermi level in reduced TiO2 samples. These bands are otherwise empty in stoichiometric TiO2 and reside in the conduction band which makes them unobservable by XPS. The existence of this Ti 3d band near the Fermi level can possibly lead to Stoner splitting of the band.Comment: 20 pages, 9 figur

Effects of Rapid Thermal Annealing on The Structural and Local Atomic Properties of Zno: Ge Nanocomposite Thin Films

We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600 degrees C for 30, 60, and 90 s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27 nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO: Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA. (C) 2015 AIP Publishing LLC.Wo

First experimental feasibility study of VIPIC: a custom-made detector for X-ray speckle measurements

exterior, view of the north elevation, from the Loire Rive