72 research outputs found
Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots
We report strong heavy hole-light mixing in GaAs quantum dots grown by
droplet epitaxy. Using the neutral and charged exciton emission as a monitor we
observe the direct consequence of quantum dot symmetry reduction in this strain
free system. By fitting the polar diagram of the emission with simple
analytical expressions obtained from kp theory we are able to extract
the mixing that arises from the heavy-light hole coupling due to the
geometrical asymmetry of the quantum dot.Comment: 4 pages, 2 figure
Dark-bright mixing of interband transitions in symmetric semiconductor quantum dots
In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum
dots in longitudinal magnetic fields applied along the growth axis we observe
in addition to the expected bright states also nominally dark transitions for
both charged and neutral excitons. We uncover a strongly non-monotonous, sign
changing field dependence of the bright neutral exciton splitting resulting
from the interplay between exchange and Zeeman effects. Our theory shows
quantitatively that these surprising experimental results are due to
magnetic-field-induced \pm 3/2 heavy-hole mixing, an inherent property of
systems with C_3v point-group symmetry.Comment: 5 pages, 3 figure
Optical properties of an ensemble of G-centers in silicon
We addressed the carrier dynamics in so-called G-centers in silicon
(consisting of substitutional-interstitial carbon pairs interacting with
interstitial silicons) obtained via ion implantation into a
silicon-on-insulator wafer. For this point defect in silicon emitting in the
telecommunication wavelength range, we unravel the recombination dynamics by
time-resolved photoluminescence spectroscopy. More specifically, we performed
detailed photoluminescence experiments as a function of excitation energy,
incident power, irradiation fluence and temperature in order to study the
impact of radiative and non-radiative recombination channels on the spectrum,
yield and lifetime of G-centers. The sharp line emitting at 969 meV (1280
nm) and the broad asymmetric sideband developing at lower energy share the same
recombination dynamics as shown by time-resolved experiments performed
selectively on each spectral component. This feature accounts for the common
origin of the two emission bands which are unambiguously attributed to the
zero-phonon line and to the corresponding phonon sideband. In the framework of
the Huang-Rhys theory with non-perturbative calculations, we reach an
estimation of 1.60.1 \angstrom for the spatial extension of the
electronic wave function in the G-center. The radiative recombination time
measured at low temperature lies in the 6 ns-range. The estimation of both
radiative and non-radiative recombination rates as a function of temperature
further demonstrate a constant radiative lifetime. Finally, although G-centers
are shallow levels in silicon, we find a value of the Debye-Waller factor
comparable to deep levels in wide-bandgap materials. Our results point out the
potential of G-centers as a solid-state light source to be integrated into
opto-electronic devices within a common silicon platform
Engineering spin-orbit coupling for photons and polaritons in microstructures
One of the most fundamental properties of electromagnetism and special
relativity is the coupling between the spin of an electron and its orbital
motion. This is at the origin of the fine structure in atoms, the spin Hall
effect in semiconductors, and underlies many intriguing properties of
topological insulators, in particular their chiral edge states. Configurations
where neutral particles experience an effective spin-orbit coupling have been
recently proposed and realized using ultracold atoms and photons. Here we use
coupled micropillars etched out of a semiconductor microcavity to engineer a
spin-orbit Hamiltonian for photons and polaritons in a microstructure. The
coupling between the spin and orbital momentum arises from the polarisation
dependent confinement and tunnelling of photons between micropillars arranged
in the form of a hexagonal photonic molecule. Dramatic consequences of the
spin-orbit coupling are experimentally observed in these structures in the
wavefunction of polariton condensates, whose helical shape is directly visible
in the spatially resolved polarisation patterns of the emitted light. The
strong optical nonlinearity of polariton systems suggests exciting perspectives
for using quantum fluids of polaritons11 for quantum simulation of the
interplay between interactions and spin-orbit coupling.Comment: main text: pages 1-11 (4 figures); supplementary material: pages
12-28 (9 figures
Single-dot Spectroscopy of GaAs Quantum Dots Fabricated by Filling of Self-assembled Nanoholes
We study the optical emission of single GaAs quantum dots (QDs). The QDs are fabricated by filling of nanoholes in AlGaAs and AlAs which are generated in a self-assembled fashion by local droplet etching with Al droplets. Using suitable process parameters, we create either uniform QDs in partially filled deep holes or QDs with very broad size distribution in completely filled shallow holes. Micro photoluminescence measurements of single QDs of both types establish sharp excitonic peaks. We measure a fine-structure splitting in the range of 22–40μeV and no dependence on QD size. Furthermore, we find a decrease in exciton–biexciton splitting with increasing QD size
Young’s Type Interference for Probing the Mode Symmetry in Photonic Structures
A revisited realization of the Young’s double slit experiment is introduced to directly probe the photonic
mode symmetry by photoluminescence experiments. We experimentally measure the far field angular
emission pattern of quantum dots embedded in photonic molecules. The experimental data well agree with
predictions from Young’s interference and numerical simulations. Moreover, the vectorial nature of
photonic eigenmodes results in a rather complicated parity property for different polarizations, a feature
which has no counterpart in quantum mechanics
Single artificial atoms in silicon emitting at telecom wavelengths
Given its unrivaled potential of integration and scalability, silicon is
likely to become a key platform for large-scale quantum technologies.
Individual electron-encoded artificial atoms either formed by impurities or
quantum dots have emerged as a promising solution for silicon-based integrated
quantum circuits. However, single qubits featuring an optical interface needed
for large-distance exchange of information have not yet been isolated in such a
prevailing semiconductor. Here we show the isolation of single optically-active
point defects in a commercial silicon-on-insulator wafer implanted with carbon
atoms. These artificial atoms exhibit a bright, linearly polarized
single-photon emission at telecom wavelengths suitable for long-distance
propagation in optical fibers. Our results demonstrate that despite its small
bandgap (~ 1.1 eV) a priori unfavorable towards such observation, silicon can
accommodate point defects optically isolable at single scale, like in
wide-bandgap semiconductors. This work opens numerous perspectives for
silicon-based quantum technologies, from integrated quantum photonics to
quantum communications and metrology
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