Quantized Thermal Transport in the Fractional Quantum Hall Effect

We analyze thermal transport in the fractional quantum Hall effect (FQHE), employing a Luttinger liquid model of edge states. Impurity mediated inter-channel scattering events are incorporated in a hydrodynamic description of heat and charge transport. The thermal Hall conductance, $K_H$, is shown to provide a new and universal characterization of the FQHE state, and reveals non-trivial information about the edge structure. The Lorenz ratio between thermal and electrical Hall conductances {\it violates} the free-electron Wiedemann-Franz law, and for some fractional states is predicted to be {\it negative}. We argue that thermal transport may provide a unique way to detect the presence of the elusive upstream propagating modes, predicted for fractions such as $\nu=2/3$ and $\nu=3/5$.Comment: 6 pages REVTeX, 2 postscript figures (uuencoded and compressed

Coulomb blockade of strongly coupled quantum dots studied via bosonization of a channel with a finite barrier

A pair of quantum dots, coupled through a point contact, can exhibit Coulomb blockade effects that reflect an oscillatory term in the dots' total energy whose value depends on whether the total number of electrons on the dots is even or odd. The effective energy associated with this even-odd alternation is reduced, relative to the bare Coulomb blockade energy for uncoupled dots, by a factor (1-f) that decreases as the interdot coupling is increased. When the transmission coefficient for interdot electronic motion is independent of energy and the same for all channels within the point contact (which are assumed uncoupled), the factor (1-f) takes on a universal value determined solely by the number of channels and the dimensionless conductance g of each individual channel. This paper studies corrections to the universal value of (1-f) that result when the transmission coefficent varies over energy scales of the size of the bare Coulomb blockade energy. We consider a model in which the point contact is described by a single orbital channel containing a parabolic barrier potential, and we calculate the leading correction to (1-f) for one-channel (spin-split) and two-channel (spin-degenerate) point contacts in the limit where the single orbital channel is almost completely open. By generalizing a previously used bosonization technique, we find that, for a given value of the dimensionless conductance g, the value of (1-f) is increased relative to its value for a zero-thickness barrier, but the absolute value of the increase is small in the region where our calculations apply.Comment: 13 pages, 3 Postscript figure

Colossal anisotropy in diluted magnetic topological insulators

We consider dilute magnetic doping in the surface of a three dimensional topological insulator where a two dimensional Dirac electron gas resides. We find that exchange coupling between magnetic atoms and the Dirac electrons has a strong and peculiar effect on both. First, the exchange-induced single ion magnetic anisotropy is very large and favors off-plane orientation. In the case of ferromagnetically ordered phase we find a colossal magnetic anisotropy energy, of the order of the critical temperature. Second, a persistent electronic current circulates around the magnetic atom and, in the case of a ferromagnetic phase, around the edges of the surface.Comment: 4 pages, 3 figure

Electric Field Control of Shallow Donor Impurities in Silicon

We present a tight-binding study of donor impurities in Si, demonstrating the adequacy of this approach for this problem by comparison with effective mass theory and experimental results. We consider the response of the system to an applied electric field: donors near a barrier material and in the presence of an uniform electric field may undergo two different ionization regimes according to the distance of the impurity to the Si/barrier interface. We show that for impurities ~ 5 nm below the barrier, adiabatic ionization is possible within switching times of the order of one picosecond, while for impurities ~ 10 nm or more below the barrier, no adiabatic ionization may be carried out by an external uniform electric field. Our results are discussed in connection with proposed Si:P quantum computer architectures.Comment: 18 pages, 6 figures, submitted to PR

Orbital Polarons in the Metal-Insulator Transition of Manganites

The metal-insulator transition in manganites is strongly influenced by the concentration of holes present in the system. Based upon an orbitally degenerate Mott-Hubbard model we analyze two possible localization scenarios to account for this doping dependence: First, we rule out that the transition is initiated by a disorder-order crossover in the orbital sector, showing that its effect on charge mobility is only small. Second, we introduce the idea of orbital polarons originating from a strong polarization of orbitals in the vicinity of holes. Considering this direct coupling between charge and orbital degree of freedom in addition to lattice effects we are able to explain well the phase diagram of manganites for low and intermediate hole concentrations

Electron Exchange Coupling for Single Donor Solid-State Qubits

Inter-valley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighbouring phosphorus donor electron states in silicon \cite{Koiller02,Koiller02A}. These same effects lead to an extreme sensitivity of the exchange energy on the relative orientation of the donor atoms, an issue of crucial importance in the construction silicon-based spin quantum computers. In this article we calculate the donor electron exchange coupling as a function of donor position incorporating the full Bloch structure of the Kohn-Luttinger electron wavefunctions. It is found that due to the rapidly oscillating nature of the terms they produce, the periodic part of the Bloch functions can be safely ignored in the Heitler-London integrals as was done by Koiller et. al. [Phys. Rev. Lett. 88,027903(2002),Phys. Rev. B. 66,115201(2002)], significantly reducing the complexity of calculations. We address issues of fabrication and calculate the expected exchange coupling between neighbouring donors that have been implanted into the silicon substrate using an 15keV ion beam in the so-called 'top down' fabrication scheme for a Kane solid-state quantum computer. In addition we calculate the exchange coupling as a function of the voltage bias on control gates used to manipulate the electron wavefunctions and implement quantum logic operations in the Kane proposal, and find that these gate biases can be used to both increase and decrease the magnitude of the exchange coupling between neighbouring donor electrons. The zero-bias results reconfirm those previously obtained by Koiller.Comment: 10 Pages, 8 Figures. To appear in Physical Review

Voltage-tunable singlet-triplet transition in lateral quantum dots

Results of calculations and high source-drain transport measurements are presented which demonstrate voltage-tunable entanglement of electron pairs in lateral quantum dots. At a fixed magnetic field, the application of a judiciously-chosen gate voltage alters the ground-state of an electron pair from an entagled spin singlet to a spin triplet.Comment: 8.2 double-column pages, 10 eps figure

B --> Phi K_S and Supersymmetry

The rare decay B --> Phi K_S is a well-known probe of physics beyond the Standard Model because it arises only through loop effects yet has the same time-dependent CP asymmetry as B --> Psi K_S. Motivated by recent data suggesting new physics in B --> Phi K_S, we look to supersymmetry for possible explanations, including contributions mediated by gluino loops and by Higgs bosons. Chirality-preserving LL and RR gluino contributions are generically small, unless gluinos and squarks masses are close to the current lower bounds. Higgs contributions are also too small to explain a large asymmetry if we impose the current upper limit on B(B_s --> mu mu). On the other hand, chirality-flipping LR and RL gluino contributions can provide sizable effects and while remaining consistent with related results in B --> Psi K_S, Delta M_s, B --> X_s gamma and other processes. We discuss how the LR and RL insertions can be distinguished using other observables, and we provide a string-based model and other estimates to show that the needed sizes of mass insertions are reasonable.Comment: 33 pages, 32 figures, Updated version for PRD. Includes discussions of other recent works on this topic. Added discussions & plots for gluino mass dependence and effects of theoretical uncertaintie

Local perceptions of mental health in Iran, Semnan Province

Introduction: Understanding local perceptions of mental health in different cultures and contexts is crucial for designing and implementing appropriate mental healthcare services. Methods: This qualitative study was conducted to investigate local perceptions of mental health in two highly populated provincial districts in Iran. Data were collected using the free list technique and interviews. A two-phase training workshop was held with the research team at a local health center, followed by a pilot study with the participation of six subjects. All the interviews were audio-recorded, transcribed, and then analyzed by the third and fourth authors in DEDOOSE. Results: A total of 30 individuals (20 in the free list and 10 as key informants in the interviews) took part in the study. Based on the study findings and the key informants' ideas, mental health problems were categorized into three categories of depression, anxiety, and obsessive�compulsive disorder (OCD). Conclusions: Mental health problems appear to be expressed in different ways and with different symptoms in different cultures, and there is a distinct need for examining mental disorders in each culture and nationality separately using culturally appropriate tools for disease screening. © 2020 The Authors. Brain and Behavior published by Wiley Periodicals LL