19 research outputs found
Thermopower of a single electron transistor in the regime of strong inelastic cotunneling
We study Coulomb blockade oscillations of thermoelectric coefficients of a
single electron transistor based on a quantum dot strongly coupled to one of
the leads by a quantum point contact. At temperatures below the charging energy
E_C the transport of electrons is dominated by strong inelastic cotunneling. In
this regime we find analytic expressions for the thermopower as a function of
temperature T and the reflection amplitude in the contact. In the case when
the electron spins are polarized by a strong external magnetic field, the
thermopower shows sinusoidal oscillations as a function of the gate voltage
with the amplitude of the order of . We obtain
qualitatively different results in the absence of the magnetic field. At
temperatures between and the thermopower oscillations are
sinusoidal with the amplitude of order . On the
other hand, at we find non-sinusoidal oscillations of the
thermopower with the amplitude .Comment: 14 pages, 3 figure
Huge metastability in high-T_c superconductors induced by parallel magnetic field
We present a study of the temperature-magnetic field phase diagram of
homogeneous and inhomogeneous superconductivity in the case of a
quasi-two-dimensional superconductor with an extended saddle point in the
energy dispersion under a parallel magnetic field. At low temperature, a huge
metastability region appears, limited above by a steep superheating critical
field (H_sh) and below by a strongly reentrant supercooling field (H_sc). We
show that the Pauli limit (H_p) for the upper critical magnetic field is
strongly enhanced due to the presence of the Van Hove singularity in the
density of states. The formation of a non-uniform superconducting state is
predicted to be very unlikely.Comment: 5 pages, 2 figures; to appear in Phys. Rev.
Quantized Thermal Transport in the Fractional Quantum Hall Effect
We analyze thermal transport in the fractional quantum Hall effect (FQHE),
employing a Luttinger liquid model of edge states. Impurity mediated
inter-channel scattering events are incorporated in a hydrodynamic description
of heat and charge transport. The thermal Hall conductance, , is shown to
provide a new and universal characterization of the FQHE state, and reveals
non-trivial information about the edge structure. The Lorenz ratio between
thermal and electrical Hall conductances {\it violates} the free-electron
Wiedemann-Franz law, and for some fractional states is predicted to be {\it
negative}. We argue that thermal transport may provide a unique way to detect
the presence of the elusive upstream propagating modes, predicted for fractions
such as and .Comment: 6 pages REVTeX, 2 postscript figures (uuencoded and compressed
Statistics of Heat Transfer in Mesoscopic Circuits
A method to calculate the statistics of energy exchange between quantum
systems is presented. The generating function of this statistics is expressed
through a Keldysh path integral. The method is first applied to the problem of
heat dissipation from a biased mesoscopic conductor into the adjacent
reservoirs. We then consider energy dissipation in an electrical circuit around
a mesoscopic conductor. We derive the conditions under which measurements of
the fluctuations of heat dissipation can be used to investigate higher order
cumulants of the charge counting statistics of a mesoscopic conductor.Comment: 9 pages, 6 figure
Electron Exchange Coupling for Single Donor Solid-State Qubits
Inter-valley interference between degenerate conduction band minima has been
shown to lead to oscillations in the exchange energy between neighbouring
phosphorus donor electron states in silicon \cite{Koiller02,Koiller02A}. These
same effects lead to an extreme sensitivity of the exchange energy on the
relative orientation of the donor atoms, an issue of crucial importance in the
construction silicon-based spin quantum computers. In this article we calculate
the donor electron exchange coupling as a function of donor position
incorporating the full Bloch structure of the Kohn-Luttinger electron
wavefunctions. It is found that due to the rapidly oscillating nature of the
terms they produce, the periodic part of the Bloch functions can be safely
ignored in the Heitler-London integrals as was done by Koiller et. al. [Phys.
Rev. Lett. 88,027903(2002),Phys. Rev. B. 66,115201(2002)], significantly
reducing the complexity of calculations.
We address issues of fabrication and calculate the expected exchange coupling
between neighbouring donors that have been implanted into the silicon substrate
using an 15keV ion beam in the so-called 'top down' fabrication scheme for a
Kane solid-state quantum computer. In addition we calculate the exchange
coupling as a function of the voltage bias on control gates used to manipulate
the electron wavefunctions and implement quantum logic operations in the Kane
proposal, and find that these gate biases can be used to both increase and
decrease the magnitude of the exchange coupling between neighbouring donor
electrons. The zero-bias results reconfirm those previously obtained by
Koiller.Comment: 10 Pages, 8 Figures. To appear in Physical Review
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Coherent control of electron spin qubits in silicon using a global field
Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors. Despite the scalability advantage of using silicon technology, realising a quantum computer with the millions of qubits required to run some of the most demanding quantum algorithms poses several outstanding challenges, including how to control many qubits simultaneously. Recently, compact 3D microwave dielectric resonators were proposed as a way to deliver the magnetic fields for spin qubit control across an entire quantum chip using only a single microwave source. Although spin resonance of individual electrons in the globally applied microwave field was demonstrated, the spins were controlled incoherently. Here we report coherent Rabi oscillations of single electron spin qubits in a planar SiMOS quantum dot device using a global magnetic field generated off-chip. The observation of coherent qubit control driven by a dielectric resonator establishes a credible pathway to achieving large-scale control in a spin-based quantum computer
Influence of orbital pair breaking on paramagnetically limited states in clean superconductors
Paramagnetic pair breaking is believed to be of increasing importance in many
layered superconducting materials such as cuprates and organic compounds.
Recently, strong evidence for a phase transition to the
Fulde-Ferrell-Larkin-Ovchinnikov(FFLO) state has been obtained for the first
time. We present a new theory of competing spin and orbital pair breaking in
clean superconducting films or layers. As a general result, we find that the
influence of orbital pair breaking on the paramagnetically limited phase
boundary is rather strong, and its neglect seldom justified. This is
particularly true for the FFLO state which can be destroyed by a very small
orbital contribution. We discuss the situation in YBa_2Cu_3O_7 which has two
coupled conducting Cu-O layers per unit cell. As a consequence, an intrinsic
orbital pair breaking component might exist even for applied field exactly
parallel to the layers.Comment: 19 pages, 5 figures, submitted to PR
Ballistic hot-electrons in mesoscopic transistors
SIGLEAvailable from British Library Document Supply Centre-DSC:D063257 / BLDSC - British Library Document Supply CentreGBUnited Kingdo
Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
International audienceComplementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in computing performance, new computing paradigms, such as quantum computing, must be developed. However, finding the optimal physical system to process quantum information, and scale it up to the large number of qubits necessary to build a general-purpose quantum computer, remains a significant challenge. Recent breakthroughs in nanodevice engineering have shown that qubits can now be manufactured in a similar fashion to silicon field-effect transistors, opening an opportunity to leverage the know-how of the CMOS industry to address the scaling challenge. In this article, we focus on the analysis of the scaling prospects of quantum computing systems based on CMOS technology
Single-electron shuttle based on a silicon quantum dot
We report on single-electron shuttling experiments with a silicon
metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an
accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate
with two additional barrier gates used to deplete the electron gas locally and
to define a quantum dot. Directional single-electron shuttling from the source
and to the drain lead is achieved by applying a dc source-drain bias while
driving the barrier gates with an ac voltage of frequency f_p. Current plateaus
at integer levels of ef_p are observed up to f_p = 240 MHz operation
frequencies. The observed results are explained by a sequential tunneling model
which suggests that the electron gas may be heated substantially by the ac
driving voltage