20 research outputs found

    The Dielectric Absorption Phenomena in Sodium Acetylacetonate Compound

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    A compact 130GHz fully packaged point-to-point wireless system with 3D-printed 26dBi lens antenna achieving 12.5Gb/s at 1.55pJ/b/m

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    Low-cost, energy efficient, high-capacity, scalable, and easy-to-deploy point-to-point wireless links at mm-waves find a variety of applications including data intensive systems (e.g., data centers), interactive kiosks, and many emerging applications requiring data pipelines. Operating above 100GHz enables compact low-footprint system solutions that can multiplex Tb/s aggregate rates for dense deployments; therefore competing with wired solution in many aspects including rate and efficiency, but much more flexible for deployment. The focus is on small-footprint fully integrated solutions, which overcome traditional packaging challenges imposed at >100GHz with commercial and low-cost solutions.info:eu-repo/semantics/acceptedVersio

    Ball Grid Array Module with Integrated Shaped Lens for 5G Backhaul/Fronthaul Communications in F-Band

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    In this paper, we propose a ball grid array (BGA) module with an integrated 3-D-printed plastic lens antenna for application in a dedicated 130 GHz OOK transceiver that targets the area of 5G backhaul/fronthaul systems. The main design goal was the full integration of a small footprint antenna with an energy-efficient transceiver. The antenna system must be compact and cost effective while delivering an approximately 30 dBi gain in the working band, defined as 120 to 140 GHz. Accordingly, a 2×2 array of aperture-coupled patch antennas was designed in the 7×7×0.362 mm3 BGA module as the feed antenna of the lens. This achieved a 7.8 dBi realized gain, broadside polarization purity above 20 dB, and over 55% total efficiency from 110 to 140 GHz (20% bandwidth). A plastic elliptical lens 40 mm in diameter and 42.3 mm in height was placed on top of the BGA module. The antenna achieved a return loss better than ?10 dB and a 28 dBi realized gain from 114 to 140 GHz. Finally, active measurements demonstrated a >12 Gbps Tx/Rx link at 5 m with bit error rate (BER) < 10?6 at 1.6 pJ/b/m. These results pave the way for future cost-effective, energy-efficient, high-data rate backhaul/fronthaul systems for 5G communications.info:eu-repo/semantics/acceptedVersio

    Influence of Temperature and Illumination on the Electrical Characteristics of Nanocrystalline Cu2SCu_2S Based Heterojunctions for Photodetector Application

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    In this work, heterojunctions of Cu2S//pSiCu_2S//p-Si were prepared by high vacuum thermal evaporation technique and examined as a photodetector structure. The dark current-voltage (I-V) characteristics of the heterojunctions measured at different temperatures ranging from 303 to 373 K were investigated. The predominant conduction mechanisms, series resistance, ideality factor and potential barrier height were determined. The downward curvature at sufficiently large voltages in the I-V characteristics is caused by the effect of series resistance RsR_{s}. The ideality factor obtained from I-V characteristics is larger than unity which can be attributed to the presence of a thin interfacial insulator layer between the metal and semiconductor. The photocurrent properties of the device under reverse bias using various illuminations were also explored for checking the validity of photodetector application of the studied device. The responsivity of light for the device under reverse bias confirms that the Cu2S//pSiCu_2S//p-Si heterojunctions are valid for photodetector application. Moreover, these results suggest that the fabricated diode can be used for optical sensor applications. The capacitance-voltage characteristics of diode were also investigated at high frequency of 1 MHz

    Positron annihilation lifetime study of pure and Na(acac) treated polyvinylalcohol

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    Positron annihilation lifetime studies of pure and treated polyvinyl alcohol (PVA) reflect the effect of concentration as well as temperature on free volume. Therefore, variations of the lifetime of the o-Ps longlived component τ3 and the probability of its formation I3 have been studied and correlated with changes in the electrical conductivity σ as well as with X-ray diffraction data. For the 10% treated sample the existence of large ionic charge carriers could be concluded from a large value of the critical free volume
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