Microbiota asociada a la enfermedad de la punta negra del trigo duro. Efectos del riego, el abonado nitrogenado y la variedad cultivada en la incidencia de la enfermedad

La enfermedad fúngica de la punta negra del trigo se caracteriza por provocar en las semillas afectadas un oscurecimiento de la zona del embrión que en ocasiones puede extenderse hacia la hendidura central dejando el grano completamente ennegrecido. Su incidencia en el cultivo de trigo es extremadamente variable y depende en gran medida de las condiciones ambientales, así pues, condiciones de alta humedad pueden incrementar a punta negra. Su presencia en el trigo duro repercute en el rendimiento semolero. Además la pasta elaborada a partir de semilla enferma presenta manchas negras y adquiere color y olor desagradable. Esta enfermedad es poco conocida a nivel europeo, sin embargo existen numerosos estudios para conocer su etiología y los factores que afectan a su aparición en países como Nueva Zelanda, Australia, Estados Unidos o Canadá. El presente trabajo pretende dar a conocer esta patología en España, determinando la influencia del riego, el abonado nitrogenado y la variedad cultivada en la incidencia de la enfermedad. Para ello se ha contado con un diseño experimental basado en 10 cultivares sembrados en parcelas con dos tratamientos de riego y dos de abonado nitrogenado. El análisis de las semillas infectadas en cámara húmeda y medios de cultivo PDA y K reveló 12 géneros fúngicos diferentes, de los cuales Alternaria alternata y Fusarium proliferatum estaban presentes en todas las muestras. El estudio del riego y abonado nitrogenado mostró diferencias significativas en la incidencia de punta negra pero fueron los 10 cultivares incluidos en el ensayo los que mayor importancia cobraron desde el punto de vista de la aparición de la enfermedad. El genotipo resultó determinante a la hora de establecer los niveles de afectación ya que las muestras encuadradas botánicamente como Triticum turgidum subsp. Turgidum convar. Turgidum presentaron una mayor susceptibilidad. las prueas de patogenicidd con los tres principales hongos asociados a la punta negra dieron resultados negativos para la germinación-nascencia de las plántulas de trigo duro inoculadas

Wide band-gap tuning Cu2ZnSn1-xGexS4 single crystals: Optical and vibrational properties

The linear optical properties of Cu2ZnSn1-xGe x S4 high quality single crystals with a wide range of Ge contents (x=0.1, 0.3, 0.5, 0.7, 0.9 and 1) have been investigated in the ultraviolet and near infrared range using spectroscopic ellipsometry measurements. From the analysis of the complex dielectric function spectra it has been found that the bandgap E 0 increases continuously from 1.49eV to 2.25eV with the Ge content. Furthermore, the evolution of the interband transitions E 1A and E 1B has been also determined. Raman scattering using three different excitation wavelengths and its analysis have been performed to confirm the absence of secondary phases in the samples, and to distinguish between stannite, wurtzite, wurzstannite and kesterite structures. Additionally, the analysis of the high resolution Raman spectra obtained in samples with different [Ge]/([Ge]+[Sn]) ratios allows describing a bimodal behavior of the dominant A modes. The understanding of the incorporation of Ge into the Cu2ZnSnS4 lattice is fundamental in order to develop efficient bandgap engineering of these compounds towards the fabrication of kesterite based solar cells with enhanced performanceThis work was supported by the Marie Curie-ITN project (KESTCELL, GA: 316488), Marie Curie-IRSES project (PVICOKEST, GA: 269167), AMALIE (TEC2012-38901-C02-01) and SUNBEAM (ENE2013-49136-C4-3-R) project funded by the Spanish Ministry of Economy and Competitiveness. RC acknowledges financial support from Spanish MINECO within the Ramón y Cajal program (RYC-2011-08521

Encuesta sobre los Usos Guías de Clase como aproximación a los REA. Una aproximación a través de la investigacción-acción

[ES]En este artículo se presentan los resultados de una encuesta sobre prácticas docentes y conocimiento de Recursos Educativos Abiertos (REA). La encuesta se formula en base a la consideración de la activad docente en base a fases de investigación acción. En este sentido se pregunta a los docentes sobre sus prácticas en la preparación de guías de clases antes de las mismas, la documentación con evidencias de lo que pasa durante las clases y los cambios que se producen en las mismas, y la reflexión posterior una vez concluyen las clases. También se incluyen preguntas sobre el conocimiento y el posicionamiento ante los REA La encuesta se dirigió a profesorado de primaria y secundaria de Galicia y del Norte de Portugal. En total se obtuvieron 602 respuestas de las que se realizan una serie de reflexiones de cara al desarrollo de los REA

Notas para la interpretación de la utilidad de los análisis para hongos fitopatógenos en suelos y sustratos para usos agrícolas

Interpretación de la utilidad de los análisis para hongos fitopatógenos en suelos y sustratos para usos agrícola

BNCT research activities at the Granada group and the project NeMeSis: Neutrons for medicine and sciences, towards an accelerator-based facility for new BNCT therapies, medical isotope production and other scientific neutron applications

The Granada group in BNCT research is currently performing studies on: nuclear and radiobiological data for BNCT, new boron compounds and a new design for a neutron source for BNCT and other applications, including the production of medical radioisotopes. All these activities are described in this report.Asociación Española Contra el Cáncer (AECC) PS16163811PORRSpanish MINECO FIS2015-69941-C2-1-PJunta de Andalucía P11-FQM-8229Campus of International Excellence BioTic P-BS-64Spanish Fundacion ACSAsociación Capitán AntonioLa Kuadrilla de IznallozSonriendo se Puede Gana

Wide band-gap tuning Cu2ZnSn1-xGexS4 single crystals: optical and vibrational properties

The linear optical properties of Cu2ZnSn1-xGexS4 high quality single crystals with a wide range of Ge contents (x = 0.1, 0.3, 0.5, 0.7, 0.9 and 1) have been investigated in the ultraviolet and near infrared range using spectroscopic ellipsometry measurements. From the analysis of the complex dielectric function spectra it has been found that the bandgap E0 increases continuously from 1.49 eV to 2.25 eV with the Ge content. Furthermore, the evolution of the interband transitions E1A and E1B has been also determined. Raman scattering using three different excitation wavelengths and its analysis have been performed to confirm the absence of secondary phases in the samples, and to distinguish between stannite, wurtzite, wurzstannite and kesterite structures. Additionally, the analysis of the high resolution Raman spectra obtained in samples with different [Ge]/([Ge]+[Sn]) ratios allows describing a bimodal behavior of the dominant A modes. The understanding of the incorporation of Ge into the Cu2ZnSnS4 lattice is fundamental in order to develop efficient bandgap engineering of these compounds towards the fabrication of kesterite based solar cells with enhanced performanc

Spectroscopic ellipsometry study of Cu2ZnSnS4 bulk poly-crystals

The linear optical properties of Cu2ZnSnS4 bulk poly-crystals have been investigated using spectroscopic ellipsometry in the range of 1.2-4.6 eV at room temperature. The characteristic features identified in the optical spectra are explained by using the Adachi analytical model for the interband transitions at the corresponding critical points in the Brillouin zone. The experimental data have been modeled over the entire spectral range taking into account the lowest E0 transition near the fundamental absorption edge and E1A and E1B higher energy interband transitions. In addition, the spectral dependences of the refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity values have been accurately determined and are provided since they are essential data for the design of Cu2ZnSnS4 based optoelectronic devices

Towards the growth of Cu2ZnSn1-xGexS4 thin films by a single-stage process: Effect of substrate temperature and composition

Cu2ZnSn1-xGexS4 (CZTGS) thin films prepared by flash evaporation of a Zn-rich Cu2ZnSn0.5Ge0.5S4 bulk compound in powder form, and a subsequent thermal annealing in S containing Ar atmosphere are studied. The effect of the substrate temperature during evaporation and the initial composition of the precursor powder on the growth mechanism and properties of the final CZTGS thin film are investigated. The microstructure of the films and elemental depth profiles depend strongly on the growth conditions used. Incorporation of Ge into the Cu2ZnSnS4 lattice is demonstrated by the shift of the relevant X-ray diffraction peaks and Raman vibrational modes towards higher diffraction angles and frequencies respectively. A Raman mode at around 348-351 cm-1 is identified as characteristic of CZTGS alloys for x = [Ge]/([Sn]+[Ge]) = 0.14-0.30. The supply of Ge enables the reduction of the Sn loss via a saccrifical Ge loss. This fact allows increasing the substrate temperature up to 350º C during the evaporation, forming a high quality kesterite material and therefore, reducing the deposition process to one single stageRC acknowledges financial support from Spanish MINECO within the Ramón y Cajal programme (RYC-2011-08521) and VIR for the Juan de la Cierva fellowship (JCI-2011-10782). GB also acknowledges the CSIC-JAE pre-doctoral program, co-funded by the European Social Fund. This work was supported by the Marie Curie-IRSES project (PVICOKEST, GA: 269167), Marie Curie-ITN project (KESTCELL, GA: 316488), DAAD project (INTERKEST, Ref: 57050358), and MINECO projects (SUNBEAM, ENE2013-49136-C4-3-R) (TEC2012-38901-C02-01). A. Scheu is acknowledged for GDOES measurement

Towards the growth of Cu2ZnSn1 xGexS4 thin films by a single-stage process: Effect of substrate temperature and composition

9 págs.; 7 figs.; 2 tabs.Cu2ZnSn1-xGexS4 (CZTGS) thin films prepared by flash evaporation of a Zn-rich Cu2ZnSn0.5Ge0.5S4 bulk compound in powder form, and a subsequent thermal annealing in S containing Ar atmosphere are studied. The effect of the substrate temperature during evaporation and the initial composition of the precursor powder on the growth mechanism and properties of the final CZTGS thin film are investigated. The microstructure of the films and elemental depth profiles depend strongly on the growth conditions used. Incorporation of Ge into the Cu2ZnSnS4 lattice is demonstrated by the shift of the relevant X-ray diffraction peaks and Raman vibrational modes towards higher diffraction angles and frequencies respectively. A Raman mode at around 348-351 cm-1 is identified as characteristic of CZTGS alloys for x = [Ge]/([Sn]+[Ge]) = 0.14-0.30. The supply of Ge enables the reduction of the Sn loss via a saccrifical Ge loss. This fact allows increasing the substrate temperature up to 350º C during the evaporation, forming a high quality kesterite material and therefore, reducing the deposition process to one single stage & 2015 Elsevier B.V. All rights reserved.RC acknowledges financial support from Spanish MINECO within the Ramón y Cajal programme (RYC-2011-08521) and VIR for the Juan de la Cierva fellowship (JCI-2011-10782). GB also acknowledges the CSIC-JAE Pre-doctoral Program, co-funded by the European Social Fund. This work was supported by the Marie Curie-IRSES Project (PVICOKEST, GA: 269167), Marie Curie-ITN project (KESTCELL, GA: 316488), DAAD project (INTERKEST, Ref: 57050358), and MINECO projects (SUNBEAM, ENE2013-49136-C4-3-R) (TEC2012- 38901-C02-01). A. Scheu is acknowledged for GDOES measurements.Peer Reviewe