Consumer Demand for Environmental, Social, and Ethical Information in Fishery and Aquaculture Product Labels

Customers’ attention to sustainability labels in fishery and aquaculture products (FAPs) has been increasing in the last decades, and the industry has adapted to this growing interest by adopting fish ecolabels. However, there is a growing interest to widen the sustainability concept to include the social and ethical information of the fishery and aquaculture industry and to go further from the voluntary approach on the labeling of these aspects in FAPs. For this reason, using data from 2021 Eurobarometer and using machine learning techniques, we disentangle the characteristics of the FAP buyers that consider the importance of environmental impact, ethical, and social information appearing on FAP labeling. The results confirmed that most of the consumers who consider environmental, social, and ethical aspects when buying FAPs also think that this information should be labeled. In line with other works, young, educated, and environmentally aware consumers in high-income countries are more likely to request this information in the FAP label. One interesting finding of the study relates with the asymmetric impact of the variables and the important group of respondents who do not consider these aspects but also advocate to include them in the FAP label. The study outcomes can be beneficial for policymakers to design future public policies regarding FAP labeling, as well as to be taken into consideration in the marketing policies of fishery and aquaculture producers and retailers

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for semiconductor/Al2O3/ferromagnet tunnel structures based on Si or GaAs that local magnetostatic fields arising from interface roughness dramatically alter and even dominate the accumulation and dynamics of spins in the semiconductor. Spin precession in the inhomogeneous magnetic fields is shown to reduce the spin accumulation up to tenfold, and causes it to be inhomogeneous and non-collinear with the injector magnetization. The inverted Hanle effect serves as experimental signature. This interaction needs to be taken into account in the analysis of experimental data, particularly in extracting the spin lifetime and its variation with different parameters (temperature, doping concentration). It produces a broadening of the standard Hanle curve and thereby an apparent reduction of the spin lifetime. For heavily doped n-type Si at room temperature it is shown that the spin lifetime is larger than previously determined, and a new lower bound of 0.29 ns is obtained. The results are expected to be general and occur for spins near a magnetic interface not only in semiconductors but also in metals, organic and carbon-based materials including graphene, and in various spintronic device structures.Comment: Final version, with text restructured and appendices added (25 pages, 9 figures). To appear in Phys. Rev.

Tumor de partes blandas en la vecindad de una prótesis de cadera no cementada

Presentamos el caso de un varón de 63 años de edad que fue diagnosticado de un sarcoma de partes blandas en la cara posterior del muslo seis meses después de implantarle una prótesis total de cadera no cementada. Se discute la posible asociación etiológica entre los tumores malignos y el implante de materiales.We present the case of a 63-year-old man who was diagnosed of a soft tissue sarcoma in the posterior side of the thigh six months after a cementless hip replacement. The possible etiological association between malignant tumours and implant materials is discussed

Electrical spin injection and detection in Germanium using three terminal geometry

In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interface. This spin signal is further observable up to 220 K. Moreover, the presence of a strong \textit{inverted} Hanle effect points at the influence of random fields arising from interface roughness on the injected spins.Comment: 4 pages, 3 figure

Electromagnetic characterization of the 990 ton gapless magnets for the OPERA experiment

The instrumented targets of the OPERA neutrino experiment are complemented by two massive spectrometers based on gapless iron magnets. In 2006, a systematic assessment of their electromagnetic properties have been carried out. In this document, we report the results of such characterization and demonstrate that the achieved performance fulfill the physics requirements for the study of νμ→ντ oscillations

Electrical and thermal spin accumulation in germanium

In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germanium without any tunnel charge current. We show that temperature gradients yield larger spin accumulations than pure electrical spin injection but, due to competing microscopic effects, the thermal spin accumulation in germanium remains surprisingly almost unchanged under the application of a gate voltage to the channel.Comment: 7 pages, 3 figure

Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pumping generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band.Comment: 5 pages, 4 figure

Domain decomposition methods for domain composition purpose: Chimera, overset, gluing and sliding mesh methods

Domain composition methods (DCM) consist in obtaining a solution to a problem, from the formulations of the same problem expressed on various subdomains. These methods have therefore the opposite objective of domain decomposition methods (DDM). Indeed, in contrast to DCM, these last techniques are usually applied to matching meshes as their purpose consists mainly in distributing the work in parallel environments. However, they are sometimes based on the same methodology as after decomposing, DDM have to recompose. As a consequence, in the literature, the term DDM has many times substituted DCM. DCM are powerful techniques that can be used for different purposes: to simplify the meshing of a complex geometry by decomposing it into different meshable pieces; to perform local refinement to adapt to local mesh requirements; to treat subdomains in relative motion (Chimera, sliding mesh); to solve multiphysics or multiscale problems, etc. The term DCM is generic and does not give any clue about how the fragmented solutions on the different subdomains are composed into a global one. In the literature, many methodologies have been proposed: they are mesh-based, equation-based, or algebraic-based. In mesh-based formulations, the coupling is achieved at the mesh level, before the governing equations are assembled into an algebraic system (mesh conforming, Shear-Slip Mesh Update, HERMESH). The equation-based counterpart recomposes the solution from the strong or weak formulation itself, and are implemented during the assembly of the algebraic system on the subdomain meshes. The different coupling techniques can be formulated for the strong formulation at the continuous level, for the weak formulation either at the continuous or at the discrete level (iteration-by-subdomains, mortar element, mesh free interpolation). Although the different methods usually lead to the same solutions at the continuous level, which usually coincide with the solution of the problem on the original domain, they have very different behaviors at the discrete level and can be implemented in many different ways. Eventually, algebraic- based formulations treat the composition of the solutions directly on the matrix and right-hand side of the individual subdomain algebraic systems. The present work introduces mesh-based, equation-based and algebraicbased DCM. It however focusses on algebraic-based domain composition methods, which have many advantages with respect to the others: they are relatively problem independent; their implicit implementation can be hidden in the iterative solver operations, which enables one to avoid intensive code rewriting; they can be implemented in a multi-code environment

Ancient origin of the CAG expansion causing Huntingtons disease in a Spanish population.

[EN] Huntington disease (HD) is an autosomal dominant neurodegenerative disorder characterized clinically by progressive motor impairment, cognitive decline, and emotional deterioration. The disease is caused by the abnormal expansion of a CAG trinucleotide repeat in the first exon of the huntingtin gene in chromosome 4p16.3. HD is spread worldwide and it is generally accepted that few mutational events account for the origin of the pathogenic CAG expansion in most populations. We have investigated the genetic history of HD mutation in 83 family probands from the Land of Valencia, in Eastern Spain. An analysis of the HD/CCG repeat in informative families suggested that at least two main chromosomes were associated in the Valencian population, one associated with allele 7 (77 mutant chromosomes) and one associated with allele 10 (two mutant chromosomes). Haplotype A-7-A (H1) was observed in 47 out of 48 phase-known mutant chromosomes, obtained by segregation analysis, through the haplotype analysis of rs1313770-HD/CCG-rs82334, as it also was in 120 out of 166 chromosomes constructed by means of the PHASE program. The genetic history and geographical distribution of the main haplotype H1 were both studied by constructing extended haplotypes with flanking short tandem repeats (STRs) D4S106 and D4S3034. We found that we were able to determine the age of the CAG expansion associated with the haplotype H1 as being between 4,700 and 10,000 years ago. Furthermore, we observed a nonhomogenous distribution in the different regions associated with the different extended haplotypes of the ancestral haplotype H1, suggesting that local founder effects have occurred.We are grateful for the kind collaboration of patients and families. This work was supported by the Fondo de investigación Sanitaria (FIS grant 01/1159), the Instituto de Salud Carlos III (grant G03/56) for the Spanish Network on Cerebellar Ataxias, and the Generalitat Valenciana (grant GRUPOS03/015).García-Planells, J.; Burguera, JA.; Solís, P.; Millán, JM.; Ginestar Peiro, D.; Palau, F.; Espinós-Armero, CÁ. (2005). Ancient origin of the CAG expansion causing Huntingtons disease in a Spanish population. Human Mutation. 25(5):453-459. https://doi.org/10.1002/humu.2016745345925

The instrumented magnets for the OPERA experiment: construction and commissioning

The design and construction of the 990-ton gapless iron magnets for the OPERA experiment represent a major challenge from the point of view of mechanics, electric and heat engineering. Two of such magnets have been built in a deep underground hall of the Gran Sasso laboratories between 2003 and 2006 and they have been switched on for the first time in March 2006. In this paper we discuss the construction and characterization of these devices. First experience with the CNGS beam are also reported. © 2007 Elsevier B.V. All rights reserved