U(1) Noncommutative Gauge Fields and Magnetogenesis

The connection between the Lorentz invariance violation in the lagrangean context and the quantum theory of noncommutative fields is established for the U(1) gauge field. The modified Maxwell equations coincide with other derivations obtained using different procedures. These modified equations are interpreted as describing macroscopic ones in a polarized and magnetized medium. A tiny magnetic field (seed) emerges as particular static solution that gradually increases once the modified Maxwell equations are solved as a self-consistent equations system.Comment: 4 page

A study of the Higgs and confining phases in Euclidean SU(2) Yang-Mills theories in 3d by taking into account the Gribov horizon

We study SU(2) three-dimensional Yang-Mills theories in presence of Higgs fields in the light of the Gribov phenomenon. By restricting the domain of integration in the functional integral to the first Gribov horizon, we are able to discuss a kind of transition between the Higgs and the confining phase in a semi-classical approximation. Both adjoint and fundamental representation for the Higgs field are considered, leading to a different phase structure.Comment: 12 pages. Version accepted for publication in the EPJ

Point defect interactions with extended defects in semiconductors

FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOWe performed a theoretical investigation of the interaction of point defects (vacancy and self-interstitials) with an intrinsic stacking fault in silicon using ab initio total-energy calculations. Defects at the fault and in the crystalline environment display a different behavior, which is evidenced by changes in formation energy and electronic structure. The formation energies for the vacancy and the [110]-split interstitial are lower at the intrinsic stacking fault than those in the crystal, indicating that in nonequilibrium conditions, intrinsic stacking faults can act, together with other extended defects, as a sink for point defects, and also that in equilibrium conditions, there can be a higher concentration of such defects at the fault than that in bulk silicon. [S0163-1829(99)03631-0].We performed a theoretical investigation of the interaction of point defects (vacancy and self-interstitials) with an intrinsic stacking fault in silicon using ab initio total-energy calculations. Defects at the fault and in the crystalline environment display a different behavior, which is evidenced by changes in formation energy and electronic structure. The formation energies for the vacancy and the [110]-split interstitial are lower at the intrinsic stacking fault than those in the crystal, indicating that in nonequilibrium conditions, intrinsic stacking faults can act, together with other extended defects, as a sink for point defects, and also that in equilibrium conditions, there can be a higher concentration of such defects at the fault than that in bulk silicon.60747114714FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOSem informaçãoSem informaçãoThe authors acknowledge partial support from the Brazilian funding agencies FAPESP and CNPq. Computer calculations were performed at the facilities of CENAPAD-SP

Low Voltage Ride through Enhancement for Wind Turbines Equipped With DFIG under Symmetrical Grid Faults

In modern power systems with significant penetration of wind-turbines (WTs), improvement of low voltage ride through (LVRT) capability of WTs equipped with doubly-fed induction generators (DFIGs) is an important issue. Thus, this paper proposes a low voltage ride through (LVRT) strategy, which comprise of a capacitor connected in series with an inductor both connected in parallel to a resistor. The configuration is then connected to a small series resistor via a pair of antiparallel-Thyristors. The circuit and its switching control scheme of the proposed LVRT circuit are designed to: minimize the transition times, maintain the RSC connection to the rotor-windings, and reduce oscillations of dc-link voltage. In this case, the capacitor is entitled to eliminate ripples generated in the rotor voltage while the inductor reduces the ripple in rotor current. Different fault conditions were studied to validate the performance of the proposed scheme using MATLAB/Simulink platform. Comparative results and analysis are presented with conventional LVRT strategies