Opciones de tratamiento en la displasia de codo

La Displasia de Codo es una enfermedad poligénica del desarrollo, con diferentes grados de heredabilidad, que afecta a animales de razas grandes. En este artículo se detallan las diferentes formas de displasia de codo y una breve reseña de sus características más destacables. Se hace mención específica a las posibilidades terapéuticas para cada enfermedad en concreto y, en los casos en donde existe controversia, se realiza una breve discusión siempre tomando como base la medicina basada en la evidencia

Alteraciones meniscales y meniscectomía en casos de rotura de ligamentos cruzados

Se revisaron 21 casos de lesiones meniscales ocurridas en una serie de 38 roturas del ligamento cruzado anterior. Se describe la técnica utilizada para la extracción del menisco en estos casos, así como las características de las meniscopatías, incluyendo el tipo y la duración de la lesión.Twenty one cases of meniscallesions occurred in a series of 38 anterior cruciate ligament ruptures were reviewed. The technique used for meniscal excision is described, as well as sorne characteristics of the meniscopathies, including type and duration of the lesion

Topologically confined states at corrugations of gated bilayer graphene

We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear at the corrugation, which reveal as robust transport channels along the stacking boundary. With increasing size of the corrugation, more localized, quantum-well-like states emerge. These finite-size states are also conductive along the fold, but in contrast to the stacking boundary states, which are gapless, they present a gap. We have also studied periodic corrugations in bilayer graphene; our findings show that such corrugations between AB- and BA-stacked regions behave as conducting channels that can be easily identified by their shape

Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage magnitude. We also show how these bilayer gapless states arise from bands of single-layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we provide a model Hamiltonian with analytical solutions, which explains the layer localization as a function of the ratio between the applied potential and interlayer hopping. Our results open a route for the manipulation of gapless states in electronic devices, analogous to the proposed writing and reading memories in topological insulators

Bound states in the continuum: localization of Dirac-like fermions

We report the formation of bound states in the continuum for Dirac-like fermions in structures composed by a trilayer graphene flake connected to nanoribbon leads. The existence of this kind of localized states can be proved by combining local density of states and electronic conductance calculations. By applying a gate voltage, the bound states couple to the continuum, yielding a maximum in the electronic transmission. This feature can be exploited to identify bound states in the continuum in graphene-based structures.Comment: 7 pages, 5 figure