Interrelation of work function and surface stability: the case of BaAl4

The relationship between the work function (Phi) and the surface stability of compounds is, to our knowledge, unknown, but very important for applications such as organic light-emitting diodes. This relation is studied using first-principles calculations on various surfaces of BaAl4. The most stable surface [Ba terminated (001)] has the lowest Phi (1.95 eV), which is lower than that of any elemental metal including Ba. Adding barium to this surface neither increases its stability nor lowers its work function. BaAl4 is also strongly bound. These results run counter to the common perception that stability and a low Phi are incompatible. Furthermore, a large anisotropy and a stable low-work-function surface are predicted for intermetallic compounds with polar surfaces.Comment: 4 pages, 5 figures, to be published in Chem. Ma

Kinetic cross coupling between non-conserved and conserved fields in phase field models

We present a phase field model for isothermal transformations of two component alloys that includes Onsager kinetic cross coupling between the non-conserved phase field and the conserved concentration field. We also provide the reduction of the phase field model to the corresponding macroscopic description of the free boundary problem. The reduction is given in a general form. Additionally we use an explicit example of a phase field model and check that the reduced macroscopic description, in the range of its applicability, is in excellent agreement with direct phase field simulations. The relevance of the newly introduced terms to solute trapping is also discussed

Letter to the Editor by M.C. DeRuiter and A.C. Gittenberger-de Groot relating to: Technical Improvements in Corrosion Casting of Small Specimens: A Study on Mesonephric Tubules and Vessels of Chicken Embryos. [by A. Carretero, H. Ditrich, M. Navarro, H. Splechtna, J. Ruberte, Scanning Microscopy Vol. 7(4), p. 1333-1338 (1993)].

Dear Editor, The topic of scanning electron microscopy (SEM) investigation of casting of vessels in the embryo still holds our interest. We are particularly focused on the possibilities of early injection as a method to support angiogenesis and vasculogenesis research in the embryo. It is questionable whether our technique leads to unreliable results because of severe trauma to the embryo as suggested by the above mentioned authors. The lower success yield might very well be the result of the higher friability of the embryo in general in this young stage

Symmetry Protected Topological Order in Open Quantum Systems

We systematically investigate the robustness of symmetry protected topological (SPT) order in open quantum systems by studying the evolution of string order parameters and other probes under noisy channels. We find that one-dimensional SPT order is robust against noisy couplings to the environment that satisfy a strong symmetry condition, while it is destabilized by noise that satisfies only a weak symmetry condition, which generalizes the notion of symmetry for closed systems. We also discuss "transmutation" of SPT phases into other SPT phases of equal or lesser complexity, under noisy channels that satisfy twisted versions of the strong symmetry condition

Scattering Theory of Charge-Current Induced Magnetization Dynamics

In ferromagnets, charge currents can excite magnons via the spin-orbit coupling. We develop a novel and general scattering theory of charge current induced macrospin magnetization torques in normal metal$|$ferromagnet$|$normal metal layers. We apply the formalism to a dirty GaAs$|$(Ga,Mn)As$|$GaAs system. By computing the charge current induced magnetization torques and solving the Landau-Lifshitz-Gilbert equation, we find magnetization switching for current densities as low as $5\times 10^{6}$~A/cm$^2$. Our results are in agreement with a recent experimental observation of charge-current induced magnetization switching in (Ga,Mn)As.Comment: Final version accepted by EP

Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. All four possible modes of nonpolar resistive switching were achieved with ON/OFF ratio in the range 10 6-10 8. Detailed current-voltage I-V characteristics analysis suggests that the conduction mechanism in low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in high resistance state which results from the Schottky contacts between the metal electrodes and SiC. ON/OFF ratios exceeding 10 7 over 10 years were also predicted from state retention characterizations. These results suggest promising application potentials for Cu/a-SiC/Au RM

On the origin dependence of multipole moments in electromagnetism

The standard description of material media in electromagnetism is based on multipoles. It is well known that these moments depend on the point of reference chosen, except for the lowest order. It is shown that this "origin dependence" is not unphysical as has been claimed in the literature but forms only part of the effect of moving the point of reference. When also the complementary part is taken into account then different points of reference lead to different but equivalent descriptions of the same physical reality. This is shown at the microscopic as well as at the macroscopic level. A similar interpretation is valid regarding the "origin dependence" of the reflection coefficients for reflection on a semi infinite medium. We show that the "transformation theory" which has been proposed to remedy this situation (and which is thus not needed) is unphysical since the transformation considered does not leave the boundary conditions invariant.Comment: 14 pages, 0 figure

Orientation and symmetry control of inverse sphere magnetic nanoarrays by guided self-assembly

Inverse sphere shaped Ni arrays were fabricated by electrodeposition on Si through the guided self-assembly of polystyrene latex spheres in Si/SiO2 patterns. It is shown that the size commensurability of the etched tracks is critical for the long range ordering of the spheres. Moreover, noncommensurate guiding results in the reproducible periodic triangular distortion of the close packed self-assembly. Magnetoresistance measurements on the Ni arrays were performed showing room temperature anisotropic magnetoresistance of 0.85%. These results are promising for self-assembled patterned storage media and magnetoresistance devices

L2,3 x-ray absorption spectroscopy and multiplet calculations for KMF3 and K2 NaMF6 (M=Ni, Cu)

The electronic structures of nickel and copper have been studied for KMF3 and K2NaMF6 compounds by a-ray absorption spectroscopy at the Ni and Cu L-2.3 edges in order to characterize the M-F chemical bond. The spectral features have been interpreted based on the mixing of two ground-state configurations \3d(n)) +\3d(n+1)](L) under bar. Multiplet calculations were used to simulate each spectrum in order to quantify the charge transfer from fluorine to the transition metal yielding a 40% ground-state contribution of the 3d(8) configuration for K2NaCuF6 and 65% of the 3d(7) configuration for K2NaNiF6

Selective darkening of degenerate transitions for implementing quantum controlled-NOT gates

We present a theoretical analysis of the selective darkening method for implementing quantum controlled-NOT (CNOT) gates. This method, which we recently proposed and demonstrated, consists of driving two transversely-coupled quantum bits (qubits) with a driving field that is resonant with one of the two qubits. For specific relative amplitudes and phases of the driving field felt by the two qubits, one of the two transitions in the degenerate pair is darkened, or in other words, becomes forbidden by effective selection rules. At these driving conditions, the evolution of the two-qubit state realizes a CNOT gate. The gate speed is found to be limited only by the coupling energy J, which is the fundamental speed limit for any entangling gate. Numerical simulations show that at gate speeds corresponding to 0.48J and 0.07J, the gate fidelity is 99% and 99.99%, respectively, and increases further for lower gate speeds. In addition, the effect of higher-lying energy levels and weak anharmonicity is studied, as well as the scalability of the method to systems of multiple qubits. We conclude that in all these respects this method is competitive with existing schemes for creating entanglement, with the added advantages of being applicable for qubits operating at fixed frequencies (either by design or for exploitation of coherence sweet-spots) and having the simplicity of microwave-only operation.Comment: 25 pages, 5 figure