Berry's Phase for Standing Wave Near Graphene Edge

Standing waves near the zigzag and armchair edges, and their Berry's phases are investigated. It is suggested that the Berry's phase for the standing wave near the zigzag edge is trivial, while that near the armchair edge is non-trivial. A non-trivial Berry's phase implies the presence of a singularity in parameter space. We have confirmed that the Dirac singularity is absent (present) in the parameter space for the standing wave near the zigzag (armchair) edge. The absence of the Dirac singularity has a direct consequence in the local density of states near the zigzag edge. The transport properties of graphene nanoribbons observed by recent numerical simulations and experiments are discussed from the point of view of the Berry's phases for the standing waves.Comment: 6 pages, 4 figure

Uniform current in graphene strip with zigzag edges

Graphene exhibits zero-gap massless-Dirac fermion and zero density of states at E = 0. These particles form localized states called edge states on finite width strip with zigzag edges at E = 0. Naively thinking, one may expect that current is also concentrated at the edge, but Zarbo and Nikolic numerically obtained a result that the current density shows maximum at the center of the strip. We derive a rigorous relation for the current density, and clarify the reason why the current density of edge state has a maximum at the center.Comment: 5 pages, 3 figures; added references and corrected typos, to be published in J. Phys. Soc. Jpn. Vol.78 No.

Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition

Under the terms of the Creative Commons Attribution License 3.0 (CC-BY).-- et al.We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene, grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. The temperature and magnetic field dependence of the longitudinal conductance exhibits unexpectedly smooth power-law behaviors, which are incompatible with a description in terms of variable range hopping or thermal activation but rather suggest the existence of extended or poorly localized states at energies between Landau levels. Such states could be caused by the high density of line defects (grain boundaries and wrinkles) that cross the Hall bars, as revealed by structural characterizations. Numerical calculations confirm that quasi-one-dimensional extended nonchiral states can form along such line defects and short circuit the Hall bar chiral edge states.This research has received funding from the Agence Nationale de la Recherche (ANR), Metrograph project (Grant No. ANR-2011-NANO-004. It has been performed within the EMRP (European Metrology Research Program), project SIB51, Graphohm. The EMRP is jointly funded by the EMRP participating countries within EURAMET (European association of national metrology institutes) and the European Union.Peer Reviewe

Multiple quantum phases in graphene with enhanced spin-orbit coupling: From the quantum spin hall regime to the spin hall effect and a robust metallic state

Under the terms of the Creative Commons Attribution License 3.0 (CC-BY).We report an intriguing transition from the quantum spin Hall phase to the spin Hall effect upon segregation of thallium adatoms adsorbed onto a graphene surface. Landauer-Büttiker and Kubo-Greenwood simulations are used to access both edge and bulk transport physics in disordered thallium-functionalized graphene systems of realistic sizes. Our findings not only quantify the detrimental effects of adatom clustering in the formation of the topological state, but also provide evidence for the emergence of spin accumulation at opposite sample edges driven by spin-dependent scattering induced by thallium islands, which eventually results in a minimum bulk conductivity ~4e2/h, insensitive to localization effects.S. R. acknowledges the Spanish Ministry of Economy and Competitiveness for funding (MAT2012-33911), the Severo Ochoa Program (MINECO SEV-2013-0295), and the Secretaria de Universidades e Investigación del Departamento de Economía y Conocimiento de la Generalidad de Cataluña. The research leading to these results has received funding from the European Union Seventh Framework Programme under Grant Agreement No. 604391 Graphene Flagship.Peer Reviewe

Magnetic-field-induced charge redistribution in disordered graphene double quantum dots

We have studied the transport properties of a large graphene double quantum dot under the influence of a background disorder potential and a magnetic field. At low temperatures, the evolution of the charge-stability diagram as a function of the B field is investigated up to 10 T. Our results indicate that the charging energy of the quantum dot is reduced, and hence the effective size of the dot increases at a high magnetic field. We provide an explanation of our results using a tight-binding model, which describes the charge redistribution in a disordered graphene quantum dot via the formation of Landau levels and edge states. Our model suggests that the tunnel barriers separating different electron/hole puddles in a dot become transparent at high B fields, resulting in the charge delocalization and reduced charging energy observed experimentally.This work was financially supported by the European GRAND project (ICT/FET, Contract No. 215752) and EPSRC

A phenomenological analysis of antiproton interactions at low energies

We present an optical potential analysis of the antiproton-proton interactions at low energies. Our optical potential is purely phenomenological, and has been parametrized on data recently obtained by the Obelix Collaboration at momenta below 180 MeV/c. It reasonably fits annihilation and elastic data below 600 MeV/c, and allows us for an evaluation of the elastic cross section and rho-parameter down to zero kinetic energy. Moreover we show that the mechanism that depresses antiproton-nucleus annihilation cross sections at low energies is present in antiproton-proton interactions too.Comment: 10 pages, 4 figure

Conductance of graphene nanoribbon junctions and the tight binding model

Planar carbon-based electronic devices, including metal/semiconductor junctions, transistors and interconnects, can now be formed from patterned sheets of graphene. Most simulations of charge transport within graphene-based electronic devices assume an energy band structure based on a nearest-neighbour tight binding analysis. In this paper, the energy band structure and conductance of graphene nanoribbons and metal/semiconductor junctions are obtained using a third nearest-neighbour tight binding analysis in conjunction with an efficient nonequilibrium Green’s function formalism. We find significant differences in both the energy band structure and conductance obtained with the two approximations

An extracellular transglutaminase is required for apple pollen tube growth

An extracellular form of the calcium-dependent protein-crosslinking enzyme TGase (transglutaminase) was demonstrated to be involved in the apical growth of Malus domestica pollen tube. Apple pollen TGase and its substrates were co-localized within aggregates on the pollen tube surface, as determined by indirect immunofluorescence staining and the in situ cross-linking of fluorescently labelled substrates. TGase-specific inhibitors and an anti-TGase monoclonal antibody blocked pollen tube growth, whereas incorporation of a recombinant fluorescent mammalian TGase substrate (histidine-tagged green fluorescent protein:His6– Xpr–GFP) into the growing tube wall enhanced tube length and germination, consistent with a role of TGase as a modulator of cell wall building and strengthening. The secreted pollen TGase catalysed the cross-linking of both PAs (polyamines) into proteins (released by the pollen tube) and His6-Xpr-GFP into endogenous or exogenously added substrates. A similar distribution of TGase activitywas observed in planta on pollen tubes germinating inside the style, consistent with a possible additional role for TGase in the interaction between the pollen tube and the style during fertilization