Heat flow control and segregation in directional solidification: Development of an experimental and theoretical basis for Bridgman-type growth experiments in a microgravity environment

Within the framework of the proposed research, emphasis was placed on application of magnetic fields to semiconductor growth systems. It was found that magnetic fields up to 3 kGauss do not affect the growth behavior nor the macro-segregation behavior in the system Ge(Ga). Applied fields are found to significantlty alter the radial dopant distribution, which is attributed to alterations in the spatial orientation of convective cells. Increasing the magnetic field to 30 kGauss is found to have a fundamental effect on dopant segregation. Emphasis is also placed on the potential of KC-135 flights for preliminary studies on the effects of reduced gravity environments on the wetting behavior of semiconductor systems in growth configuration. The limited number of experiments conducted does not allow any conclusions on the merits of KC-135 flights for semiconductor processing research

New outlook on control of crystalline and chemical perfection during growth of silicon

Significant progress has been made in our understanding of the Czochralski crystal growth process with the realization that the incorporation of oxygen into silicon is directly related to the internal gettering capability of wafers during device fabrication. It was also recognized that the electronic properties exhibited by silicon during various stages of device fabrication were significantly affected by the thermal history of the silicon during the post-growth cool-down period. Turbulent melt convection, induced by unavoidable destabilizing thermal gradients, was found to interfere with homogeneous dopant (and oxygen) incorporation and to influence markedly the dynamics of nonequilibrium point defects in the solidified silicon matrix during the cool-down period. In view of the unavoidability of destabilizing thermal gradients in conventional crystal growth configurations, melt stabilization through the application of magnetic fields is generally considered a viable approach. Control of heat input to the melt through heat pipe systems, as used during growth of germanium, cannot be applied to industrial growth of silicon. Recent studies have shown that heat exchange systems located coaxially about a growing crystal can be used to stabilize and control not only heat transfer in the grown crystal, but also in the melt adjacent to the solidification interface

Ion composition in a noctilucent cloud

Ion composition at mesospheric altitudes was measured and compared between high and mid-latitude sites under summer daytime conditions. Rocket-borne measurements were made with pumped quadrupole ion mass spectrometers. The mid-latitude data were obtained at Wallops Island, Virginia on June 30, 1973, at 1510 LMT. Large quantities of hydronium cluster ions were observed through 109+, with maximum concentrations at 55+ and 73+. Also, cluster ions of nitric oxide were observed through 84+. The high latitude launch occurred at Kiruna, Sweden on August 2, 1973, at 0700 LMT following visual sighting of a noctilucent cloud on the prior evening. The data near mesopause shows cluster ions, but also a preponderance of heavy ions between 90 and 145 AMU, with groupings 18 AMU apart but unrelated to the more typical cluster ions. One possible set of consistent identifications leads to iron and iron oxide hydrates. These results may suggest the presence of metallic particulates and ions which form hydrated clusters ions

Proposal for the creation of a national network of global studies high schools

This is a proposal to seek private and public funding to create a national network of global studies high schools (GSHS). The aim of a network of GSHSs is to enlarge the leadership corps of the next generation and to equip its members to address mounting global challenges to the security, material welfare, and freedoms of the American people, the citizens of open societies everywhere, and those who are striving to join their ranks.Title VI National Resource Center Grant (P015A060066)published or submitted for publicationnot peer reviewe

Characterisation of long-term climate change by dimension estimates of multivariate palaeoclimatic proxy data

The problem of extracting climatically relevant information from multivariate geological records is tackled by characterising the eigenvalues of the temporarily varying correlation matrix. From these eigenvalues, a quantitative measure, the linear variance decay (LVD) dimension density, is derived. The LVD dimension density is shown to serve as a suitable estimate of the fractal dimension density. Its performance is evaluated by testing it for (i) systems with independent components and for (ii) subsystems of spatially extended linearly correlated systems. The LVD dimension density is applied to characterise two geological records which contain information about climate variability during the Oligocene and Miocene. These records consist of (a) abundances of different chemical trace elements and (b) grain-size distributions obtained from sediment cores offshore the East Antarctic coast. The presented analysis provides evidence that the major climate change associated with the Oligocene-Miocene transition is reflected in significant changes of the LVD dimension density. This is interpreted as a change of the interrelationships between different trace elements in the sediment and to a change of the provenance area of the deposited sediment

Indium antimonide crystal growth experiment M562

It was established that ideal diffusion controlled steady state conditions, never accomplished on earth, were achieved during the growth of Te-doped InSb crystals in Skylab. Surface tension effects led to nonwetting conditions under which free surface solidification took place in confined geometry. It was further found that, under forced contact conditions, surface tension effects led to the formation of surface ridges (not previously observed on earth) which isolated the growth system from its container. In addition, it was possible, for the first time, to identify unambiguously: the origin of segregation discontinuities associated with facet growth, the mode of nucleation and propagation of rotational twin boundaries, and the specific effect of mechanical-shock perturbations on segregation. The results obtained prove the advantageous conditions provided by outer space. Thus, fundamental data on solidification thought to be unattainable because of gravity-induced interference on earth are now within reach

Magnification relations in gravitational lensing via multidimensional residue integrals

We investigate the so-called magnification relations of gravitational lensing models. We show that multidimensional residue integrals provide a simple explanation for the existence of these relations, and an effective method of computation. We illustrate the method with several examples, thereby deriving new magnification relations for galaxy lens models and microlensing (point mass lensing).Comment: 16 pages, uses revtex4, submitted to Journal of Mathematical Physic

Solidification (crystal growth) in the presence of gravitational forces

The surface tension behavior of doped and undoped InSb melts was investigated as well as their temperature and composition dependence. Surface tension in InSb melts was determined using the sessile-drop technique covering the temperature range from 530 C to 880 C. A linear regression of the data obtained shows that the temperature dependence of sigma is 392- (T-530) x (7000) plus or minus 10 dyne/cm. The d sigma/d Tau for intrinsics InSb is less than that previously reported. On the basis of the surface tension data obtained, it is concluded that surface tension induced convective flow velocities in InSb under reduced gravity conditions range from zero to at most 1 cm/sec. Accordingly, no interference with dopant segregation can be expected during growth in space because the momentum boundary layer (at the crystal melt interface) associated with any Marangoni-type convective flows would, at the given growth rate, be significantly larger than the predicted diffusion boundary layer thickness