238 research outputs found

    Ground States for Exponential Random Graphs

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    We propose a perturbative method to estimate the normalization constant in exponential random graph models as the weighting parameters approach infinity. As an application, we give evidence of discontinuity in natural parametrization along the critical directions of the edge-triangle model.Comment: 12 pages, 3 figures, 1 tabl

    Cross-docking: A systematic literature review

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    This paper identifies the major research concepts, techniques, and models covered in the cross-docking literature. A systematic literature review is conducted using the BibExcel bibliometric analysis and Gephi network analysis tools. A research focus parallelship network (RFPN) analysis and keyword co-occurrence network (KCON) analysis are used to identify the primary research themes. The RFPN results suggest that vehicle routing, inventory control, scheduling, warehousing, and distribution are most studied. Of the optimization and simulation techniques applied in cross-docking, linear and integer programming has received much attention. The paper informs researchers interested in investigating cross-docking through an integrated perspective of the research gaps in this domain. This paper systematically reviews the literature on cross-docking, identifies the major research areas, and provides a survey of the techniques and models adopted by researchers in the areas related to cross-docking

    Thermal effects on electron-phonon interaction in silicon nanostructures

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    Raman spectra from silicon nanostructures, recorded using excitation laser power density of 1.0 kW/cm^2, is employed here to reveal the dominance of thermal effects at temperatures higher than the room temperature. Room temperature Raman spectrum shows only phonon confinement and Fano effects. Raman spectra recorded at higher temperatures show increase in FWHM and decrease in asymmetry ratio with respect to its room temperature counterpart. Experimental Raman scattering data are analyzed successfully using theoretical Raman line-shape generated by incorporating the temperature dependence of phonon dispersion relation. Experimental and theoretical temperature dependent Raman spectra are in good agreement. Although quantum confinement and Fano effects persists, heating effects start dominating at higher temperatures than room tempaerature.Comment: 9 Pages, 3 Figures and 1 Tabl

    Spectroscopic investigation of quantum confinement effects in ion implanted silicon-on-sapphire films

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    Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B+^+) and phosphorous (P+^+) ions. Different samples, prepared by varying the ion dose in the range 101410^{14} to 5 x 101510^{15} and ion energy in the range 150-350 keV, were investigated by the Raman spectroscopy, photoluminescence (PL) spectroscopy and glancing angle x-ray diffraction (GAXRD). The Raman results from dose dependent B+^+ implanted samples show red-shifted and asymmetrically broadened Raman line-shape for B+^+ dose greater than 101410^{14} ions cm2^{-2}. The asymmetry and red shift in the Raman line-shape is explained in terms of quantum confinement of phonons in silicon nanostructures formed as a result of ion implantation. PL spectra shows size dependent visible luminescence at \sim 1.9 eV at room temperature, which confirms the presence of silicon nanostructures. Raman studies on P+^+ implanted samples were also done as a function of ion energy. The Raman results show an amorphous top SOS surface for sample implanted with 150 keV P+^+ ions of dose 5 x 101510^{15} ions cm2^{-2}. The nanostructures are formed when the P+^+ energy is increased to 350 keV by keeping the ion dose fixed. The GAXRD results show consistency with the Raman results.Comment: 9 Pages, 6 Figures and 1 Table, \LaTex format To appear in SILICON(SPRINGER

    Continuity of the measure of the spectrum for quasiperiodic Schrodinger operators with rough potentials

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    We study discrete quasiperiodic Schr\"odinger operators on \ell^2(\zee) with potentials defined by γ\gamma-H\"older functions. We prove a general statement that for γ>1/2\gamma >1/2 and under the condition of positive Lyapunov exponents, measure of the spectrum at irrational frequencies is the limit of measures of spectra of periodic approximants. An important ingredient in our analysis is a general result on uniformity of the upper Lyapunov exponent of strictly ergodic cocycles.Comment: 15 page

    Residual stresses in multi-layered silicon-on-sapphire thin film systems

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    This paper uses the finite element method to analyse the generation and evolution of residual stress in silicon-on-sapphire thin film systems during cooling. The effects of material properties, thin film structures and processing conditions, on the stress distribution were explored in detail. It was found that under certain conditions, significant stress concentration and discontinuity can take place to initiate crack and/or delamination in the systems. However, these can be minimised by controlling the buffer layer thickness

    Sol-Jel yöntemiyle borlanmış inconel alaşımının yüzey karakterizasyonu

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    Bu çalışmada, Inconel alaşımı sol-jel mettodu kullanılarak borlanmıştır. Borlama sonrası numuneler elektrik rezistanslı fırında 900○C'de 1 saat bekeltilerek sinterlemiştir. Numuneler kesitten kesilerek gerekli metolografik işlemlerden geçilirek numunelerin borür tabaka kalınlıkları Nikon MA100 marka optik mikroskop yardımıyla ölçülmüştür. Borlanmış numunelede oluşan fazların analizi Shimadzu XRD-6000 model X-ışınları cihazı yardımıyla tespit edilmiştir. Borlama işlemi sonucunda Inconel 625 alaşımında NiB, Ni2B, Ni3B, Ni4B3, MoB, CrB ve Cr2B fazları elde edilmiştir. Borlama sıcaklık ve süresine bağlı olarak 4.1-9.7 μm arasında borür tabakaları elde edilmiştir. Üç farklı bor bileşiğinde farklı mikro sertlik değerleri elde edilmiştir. Tinkal’de 1673 HV0.1, Sassolit’de 1997 HV0.1, B4C’de 2375 HV0.1, İşlemsiz Inconel 625 alaşımınında ise 541 HV0.1 sertlik değerleri elde edilmiştir.In this study, surface characterization of boronized inconel alloy was investigated by sol gel method. The samples were sintered at 900ºC for 1 hour in a furnace with electrical resistance. The boride samples were cut from the section and the boride layer thicknesses obtained after the required sanding and polishing processes were measured with the help of Nikon MA100 optic microscope. Borate phases were obtained by using Shimadzu XRD 6000 brand XRD device and micro hardness tests were carried out with Shimadzu HMV-2 brand tester. As a result of XRD analysis of boron Inconel samples, NiB, Ni2B, Ni3B, Ni4B3, MoB, CrB and Cr2B phases were obtained. Depending on boron temperature and time, boron layers were obtained on Inconel samples with thicknesses ranging from 4.1-9.7 μm. The micro hardness values of the boronized Inconel samples were 541 HV0.1 in the untreated sample while the hardness values of tinkal 1673 HV0.1, Sassolit 1997 HV0.1 and boron carbide 2375 HV0.1 were obtained
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