A Catalogue of Galaxies Having Radial Velocities: Volume 15: Part 7

A tabulation of galaxies which have radial velocities is presented. The parameters of each galaxy are: (1) an abbreviation for the catalog designation, (2) RA(1950), (3) Dec. (1950), (4) new galactic longitude, (5) new galactic latitude, (6) morphological type, (7) magnitude, (8) observed radial velocity in kilometers per second (9) radial velocity corrected for solar motion, and (10) estimated error in radial velocity in kilometers per second

High-Performance research for High-tech materials:1. Degussa’s Science-to-Business Center Nanotronics, 2. Four percent for the future

High-performance research for High-tech materials is an article about Degussa AG´s research efforts and strategy. Degussa AG, Germany, has decided to increase investment in research and development significantly—from 3.1 percent of sales revenue in 2004 to 4 percent by 2007. How is the firm going to achieve this goal? The paper is divided into two parts. First Dr. Andreas Gutsch gives newest insight into the Science-to-Business Center Nanotronics. Second an interview with Prof. Dr. Michael Dröscher answers questions about research strategy and project portfolio management

Uncertainty of biomass contributions from agriculture and forestry to renewable energy resources under climate change

In the future, Germany's land-use policies and the impacts of climate change on yields will affect the amount of biomass available for energy production. We used recent published data on biomass potentials in the federal states of Germany to assess the uncertainty caused by climate change effects in the potential supply of biomass available for energy production. In this study we selected three climate scenarios representing the maximum, mean and minimum temperature increase for Germany out of 21 CMIP5-projections driven by the Representative Concentration Pathways (RCP) 8.5 scenario. Each of the three selected projections was downscaled using the regional statistical climate model STARS. We analysed the yield changes of four biomass feedstock crops (forest, short-rotation coppices (SRC), cereal straw (winter wheat) and energy maize) for the period 2031–2060 in comparison to 1981–2010. The mean annual yield changes of energy wood from forest and short-rotation coppices were modelled using the process-based forest growth model 4C. The yield changes of winter wheat and energy maize from agricultural production were simulated with the statistical yield model IRMA. Germany's annual biomass potential of 1500 PJ varies between minus 5 % and plus 8 % depending on the climate scenario realisation. Assuming that 1500 PJ of biomass utilisation can be achieved, climate change effects of minus 75 (5 %) PJ or plus 120 (8 %) PJ do not impede overall bioenergy targets of 1287 PJ in 2020 and 1534 PJ in 2050. In five federal states the climate scenarios lead to decreasing yields of energy maize and winter wheat. Impacts of climate scenarios on forest yields are mainly positive and show both positive and negative effects on yields of SRC

Optical emission from Si O2 -embedded silicon nanocrystals: A high-pressure Raman and photoluminescence study

© 2015 American Physical Society. We investigate the optical properties of high-quality Si nanocrystals (NCs)/SiO2 multilayers under high hydrostatic pressure with Raman scattering and photoluminescence (PL) measurements. The aim of our study is to shed light on the origin of the optical emission of the Si NCs/SiO2. The Si NCs were produced by chemical-vapor deposition of Si-rich oxynitride (SRON)/SiO2 multilayers with 5- and 4-nm SRON layer thicknesses on fused silica substrates and subsequent annealing at 1150°C, which resulted in the precipitation of Si NCs with an average size of 4.1 and 3.3 nm, respectively. From the pressure dependence of the Raman spectra we extract a phonon pressure coefficient of 8.5±0.3cm-1/GPa in both samples, notably higher than that of bulk Si(5.1cm-1/GPa). This result is ascribed to a strong pressure amplification effect due to the larger compressibility of the SiO2 matrix. In turn, the PL spectra exhibit two markedly different contributions: a higher-energy band that redshifts with pressure, and a lower-energy band which barely depends on pressure and which can be attributed to defect-related emission. The pressure coefficients of the higher-energy contribution are (-27±6) and (-35±8)meV/GPa for the Si NCs with a size of 4.1 and 3.3 nm, respectively. These values are sizably higher than those of bulk Si(-14meV/GPa). When the pressure amplification effect observed by Raman scattering is incorporated into the analysis of the PL spectra, it can be concluded that the pressure behavior of the high-energy PL band is consistent with that of the indirect transition of Si and, therefore, with the quantum-confined model for the emission of the Si NCs.Work supported by the European Community’s Seventh Framework Programme (FP7/2007-2013) under grant agreement No. 245977 (project NASCEnT). Financial support by the Spanish Government through projects LEOMIS (TEC2012-38540-C02-01) and MAT2012-38664-C02-02 is also acknowledgedPeer Reviewe

Optical emission from SiO2-embedded silicon nanocrystals: a high pressure Raman and photoluminescence study

We investigate the optical properties of high-quality Si nanocrystals (NCs)/SiO2 multilayers under high hydrostatic pressure with Raman scattering and photoluminescence (PL) measurements. The aim of our study is to shed light on the origin of the optical emission of the Si NCs/SiO2. The Si NCs were produced by chemical-vapor deposition of Si-rich oxynitride (SRON)/SiO2 multilayers with 5- and 4-nm SRON layer thicknesses on fused silica substrates and subsequent annealing at 1150 °C, which resulted in the precipitation of Si NCswith an average size of 4.1 and 3.3 nm, respectively. From the pressure dependence of the Raman spectra we extract a phonon pressure coefficient of 8.5 ± 0.3 cm−1/GPa in both samples, notably higher than that of bulk Si (5.1 cm−1/GPa). This result is ascribed to a strong pressure amplification effect due to the larger compressibility of the SiO2 matrix. In turn, the PL spectra exhibit two markedly different contributions: a higher-energy band that redshifts with pressure, and a lower-energy band which barely depends on pressure and which can be attributed to defect-related emission. The pressure coefficients of the higher-energy contribution are (−27 ± 6) and (−35 ± 8) meV/GPa for the Si NCs with a size of 4.1 and 3.3 nm, respectively. These values are sizably higher than those of bulk Si (−14 meV/GPa). When the pressure amplification effect observed by Raman scattering is incorporated into the analysis of the PL spectra, it can be concluded that the pressure behavior of the high-energy PL band is consistent with that of the indirect transition of Si and, therefore, with the quantum-confined model for the emission of the Si NCs