Co-doped 1.3μm InAs Quantum Dot Lasers with high gain and low threshold current

The mechanism by which co-doping reduces threshold current in O-band Quantum dot lasers is examined, with n-type direct doping of the dots reducing threshold current and p-type modulation doping improving the temperature dependence of threshold current density, relative to undoped samples

1.3-μm InAs Quantum Dot Lasers with P-type modulation and direct N-type co-doping

O-band quantum dot lasers with co-doping reduce threshold current density relative to the undoped case, for 1mm long uncoated lasers from 245Acm-2 to 132Acm-2 at 27°C and 731Acm-2 to 312Acm-2 at 97°C. Improvements are also significant compared to lasers employing any one doping strategy

Addressing key issues in the consanguinity-related risk of autosomal recessive disorders in consanguineous communities: lessons from a qualitative study of British Pakistanis

Currently there is no consensus regarding services required to help families with consanguineous marriages manage their increased genetic reproductive risk. Genetic services for communities with a preference for consanguineous marriage in the UK remain patchy, often poor. Receiving two disparate explanations of the cause of recessive disorders (cousin marriage and recessive inheritance) leads to confusion among families. Further, the realisation that couples in non-consanguineous relationships have affected children leads to mistrust of professional advice. British Pakistani families at-risk for recessive disorders lack an understanding of recessive disorders and their inheritance. Such an understanding is empowering and can be shared within the extended family to enable informed choice. In a three-site qualitative study of British Pakistanis, we explored family and health professional perspectives on recessively inherited conditions. Our findings suggest, first, that family networks hold strong potential for cascading genetic information, making the adoption of a family centred approach an efficient strategy for this community. However, this is dependent on provision of high quality and timely information from health care providers. Secondly, families’ experience was of ill-coordinated and time-starved services, with few having access to specialist provision from Regional Genetics Services; these perspectives were consistent with health professionals’ views of services. Thirdly, we confirm previous findings that genetic information is difficult to communicate and comprehend, further complicated by the need to communicate the relationship between cousin marriage and recessive disorders. A communication tool we developed and piloted is described and offered as a useful resource for communicating complex genetic information

Degradation of III–V Quantum Dot Lasers Grown Directly on Silicon Substrates

Initial age-related degradation mechanisms for InAs quantum dot lasers grown on silicon substrates emitting at 1.3 μm are investigated. The rate of degradation is observed to increase for devices operated at higher carrier densities and is therefore dependent on gain requirement or cavity length. While carrier localization in quantum dots minimizes degradation, an increase in the number of defects in the early stages of aging can increase the internal optical-loss that can initiate rapid degradation of laser performance due to the rise in threshold carrier density. Population of the two-dimensional states is considered the major factor for determining the rate of degradation, which can be significant for lasers requiring high threshold carrier densities. This is demonstrated by operating lasers of different cavity lengths with a constant current and measuring the change in threshold current at regular intervals. A segmented-contact device, which can be used to measure the modal absorption and also operate as a laser, is used to determine how the internal optical-loss changes in the early stages of degradation. Structures grown on silicon show an increase in internal optical loss, whereas the same structure grown on GaAs shows no signs of increase in internal optical loss when operated under the same conditions

Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures

We report the observation of a thermally activated resonant tunnelling feature in the current?voltage characteristics (I(V)) of triple barrier resonant tunnelling structures (TBRTS) due to the alignment of the n = 1 confined states of the two quantum wells within the active region. With great renewed interest in tunnelling structures for high frequency (THz) operation, the understanding of device transport and charge accumulation as a function of temperature is critical. With rising sample temperature, the tunnelling current of the observed low voltage resonant feature increases in magnitude showing a small negative differential resistance region which is discernible even at 293 K and is unique to multiple barrier devices. This behaviour is not observed in conventional double barrier resonant tunnelling structures where the transmission coefficient at the Fermi energy is predominantly controlled by an electric field, whereas in TBRTS it is strongly controlled by the 2D to 2D state alignment

Optical Microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells

Recent reports of magnetotransport measurements of InSb/Al 1-x In x Sb quantum well structures at low temperature (3 K) have shown the need for inclusion of a new scattering mechanism not present in traditional transport lifetime models. Observations and analysis of characteristic surface structures using differential interference contrast DIC (Nomarski) optical imaging have extracted representative average grain feature sizes for this surface structure and shown these features to be the limiting low temperature scattering mechanism. We have subsequently modelled the potential profile of these surface structures using Landauer-Büttiker tunnelling calculations and a combination of a Monte-Carlo simulation and Drude model for mobility. This model matches experimentally measured currents and mobilities at low temperatures, giving a range of possible barrier heights and widths, as well modelling the theoretical trend in mobility with temperature

Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier tunnelling structures

A thermally activated resonant tunnelling feature has been observed in the current-voltage characteristics (I(V)) of triple barrier resonant tunnelling structures (TBRTS) due to alignment of the n=1 confined states in the two quantum wells (QWs) within the active region. With rising sample temperature, the tunnelling current of the resonant feature increases in magnitude, showing a small negative differential resistance region which is discernable even at 293K. This behaviour is unique to multiple barrier devices and cannot be observed in conventional double barrier resonant tunnelling structures. Symmetric TBRTS, of nominal well widths 67Å and asymmetric QW, with decreasing second well widths, nominally 64Å to 46Å, have been studied with temperature dependent resonant tunnelling behaviour observed in both symmetric and asymmetric designs. Activation energies have been extracted from Arrhenius plots of the magnitude of the thermally activated peak current for each device design. This activation energy decreases as the second well width is decreased due to alignment occurring at increasingly greater bias and as such at energies closer to the Fermi level in the emitter region of the devices. Experimentally determined activation energies are in good agreement with theoretical values obtained by modelling the device I(V) characteristic

Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs

Vertical cavity surface emitting laser (VCSEL) devices and arrays are increasingly important in meeting the demands of today’s wireless communication and sensing systems. Understanding the origin of non-uniform wet thermal oxidation across large-area VCSEL wafers is a crucial issue to ensure highly reliable, volume-manufactured oxide-confined VCSEL devices. As VCSEL wafer diameters approach 200 mm, germanium (Ge) is emerging as an alternative substrate solution. To this end, we investigate the uniformity of 940 nm-emitting VCSEL performance across 150 mm diameter GaAs- and Ge-substrates, comparing the oxidation method in each case. Nominally identical epitaxial structures are used to evaluate the strain induced wafer bow for each substrate type with Ge exhibiting a reduction of over 100 μm in the peak-to-valley distortion when compared with GaAs. This wafer bow is found to be the principal cause of centre-to-edge oxidation non-uniformity when utilising a conduction-heated chuck furnace, in comparison to a convection-heated tube furnace. Using on-wafer testing of threshold current, differential resistance, and emission wavelength, device performance is demonstrated for the first time across a 150 mm Ge wafer, and is shown to be comparable to performance on GaAs substrates, when the effects of oxidation uniformity are removed. These results provide evidence that there is a realistic path to manufacturing high yield VCSELs, over wafer diameters approaching those used in Si-photonics, via Ge substrates