Variation of photovoltage spectra for SnO_2/PS/Si during prior-and post-adsorption

制备了二氧化锡/ 多孔硅/ 硅（SnO2/PS/SI） 异质结构样品，在不同温度下，分别测量样品吸附氢气、液化石油气前后的光生电压谱。结合X 光电子能谱（XPS） 测量结果，分析了光生电压谱变化的机理SnO 2/PS/Si heterojunction structure samples are fabricated.The photovoltage spectra of the samples during prior-and post-adsorption of H 2 or liquified petroleum at different temperature are measured.In combination with the results of XPS measurement,analysis on the variation mechanism of the photovoltage spectra is made.福建省自然科学基

Development of a New Temperature and Humidity Sensitive Integrated Sensor

研制成由硅温敏二极管和聚酸亚胺湿敏电容集成的温湿度传感器。介绍了它的工作原理、结构设计、制作工艺、测试结果以及为提高它的性能所作的一些研究。An integrated temperature and humidity sensor consisting of the silicon diode and the polyimide-based capacitive humidity sensor has been deve-loped.The sensor working principle, structure design, manufacturing technology, measurement results and some studies of improving the sensor characteristics have been introduced.福建省科技资

STUDY ON THE ADSORPTION MECHANISM OF GASEOUS MOLECULES ON SURFACE OF SEMICONDUCTOR BY PHOTOVOLTAIC METHOD

通过对 p型和n型的同一硅单晶样品分别置于大气、氧气、氮气的不同氛围中所进行的各有关表面参量的光伏测算 ,分析了同一样品处于不同氛围中 ,以及不同导电类型的样品处于同一氛围中的测算结果的变化规律 ,探讨了出现这一规律的内在机理 ,解释了各有关的物理现象 .The relative surface parameters were determined by photovoltaic method in p and n type silicon in a wafer under the atmospheric, oxygenic, and nitric environments, respectively. The inherent mechanism is approached according to the parameter variations, and the relative physical phenomena are explained

Development of Temperature sensitive Silicon Diodes

由硅材料电阻率的选择、结面积设计的不同，试制几种温敏二极管，在恒定电流下，测量室温至120℃温度范围内正向电压Vf与温度T的关系，测试结果表明，Vf-T特性曲线线性优良，在恒定电流为50μA下，灵敏度最高的可达2.70MV/℃.根据测试结果，对提高灵敏度等特性进行一些讨论.Several types of temperature sensitive silicon diodes have been produced on trial by the diFFerent selection of the silicon material resistivity and the diFFerent design of the PN junction area.The relationship between the Forward voltage V F and temperature T has been measured From room temperature to 120℃ under a constant current.The results indicate that the V F T characteristic presents an excellent linearity, and the maximum sensitivity comes up to 2.70 mV/℃ under 50 μA constant Forward current.The discussions about increasing the sensitivity and some other characteristics have been done according to the measurement results.福建省科技资

Punching Shear Strength of Steel Fiber ReinFoced Concrete Slabs

在硅基片上，采用集成电路工艺制作成有上下电极结构的以聚酰亚胺介质薄膜作为感湿膜的电容式湿度敏感元件，上电极有六种不同设计.对所研制的敏感元件进行感湿特性、温度特性、响应特性的测量，并分析讨论了测量结果.The strength characteristics of steel Fiber reinForced concrete square slabs subjected to punching shear are investigated.The steel Fiber not only enhanced the ultimate punching shear strength, but also transFormed brittle type punching shear Failure into gradual and ductile Failure.A Formula For calculating the punching strength is derived by using plastic method.The comparison shows good agreement between the theoretical values and the test results.福建省科技资

Study of the Characteristic and Parameters of Semiconductor Material

提出超晶格 (Al As/ Ga As)和应变超晶格 (Gex Si1-x/ Si,Inx Ga1-x As/ Ga As)光伏效应的机理 ,测量了不同温度下的光伏谱 ,光伏曲线反映了台阶二维状态密度分布并观察到跃迁峰 .计算了导带和价带子带的位置和带宽 ,根据宇称守恒确定光跃迁选择定则 ,对跃迁峰进行指认 .研究了光伏随温度变化、激子谱峰半高宽随温度和阱宽的变化 ,讨论谱峰展宽机制中的声子关联 ,混晶组分起伏及界面不平整对线宽的影响 .测量了元素和化合物半导体单晶材料的室温、低温下的表面光电压谱 ,推导了有关计算公式 ,计算得出电学参数 (L、n0 、μ、S、W)、深能级和表面能级位置、带隙和化合物组分 ;分析了电学参数的温度关系 ;由双能级复合理论 ,研究了少子扩散长度与深能级关系 ,计算了深能级浓度和参数 .在不同条件下研制了二氧化锡 /多孔硅 /硅 (Sn O2 / PS/ Si)和二氧化锡 /硅 (Sn O2 / Si) ,测量了它们的光伏谱 ,分析表明它们存在着异质结 .当样品吸附还原性气体 (H2 、CO、液化石油气 )时 ,光电压有明显变化 ,因此可做为一种新的敏感元件 .分析了它们的吸附机理 ,计算了有关参数The mechanism of the photovoltaic effect for superlattices(AlAs/GaAs) and strained superlattices(Ge xSi 1-x /Si,In xGa 1-x As/GaAs)are discussed. The photovoltage spectra at different temperatures have been measured. The curves of SPV reflect the step like distribution of two dimensional state density, and transition peaks have been observed. The levels and bandwidths of the subbands have been calculated. The transition speaks are assingned according to the selection rule for optical transition based on the conservation law of parit. The changed in photovoltage with temperature, the full width of half maxium of the transition peaks as a function of temperature and well width for different samples are investigated. The influences of exciton phonon coupling, alloy disorder and interface roughness on the broading mechanism of the transition peaks are discussed. The surface photovoltage of element and compounds single crystal semiconductors are measured at room and low temperatures. Some calculation formules are derived. The electrical parameters (L,n 0,μ,S,W),deep levels and surface level, energy gap and composition of the compounds are determined. The temperature dependence of the electrical parameters are analyzed. The dependence of minority carrier diffusion length on deep level are studied by double level recombination theory. The concentration and parameters of deep levels are calculated. Tin Oxide/Porous Silicon/Silicon(SnO 2/PS/Si)and Tin Oxide/Silicon are fabricated at different conditions. The photovoltage spectra of SnO 2/PS/Si and SnO 2/Si have been studied. It is shown that there exist heterojunctions in SnO 2/PS/Si and SnO 2/Si. The photovoltage changes evidently when the sample absorbes reducing gas (H 2,CO,liguified petroleum). The experimental results indicate that SnO 2/PS/Si or SnO 2/Si is a good material for gas sensor. The mechamism for the gas absorption of SnO 2/PS/Si and SnO 2/Si are discussed. The parameters are calculated.国家自然科学基金资助项目!(技准 36 1号 ;6 86 6 0 52 ;;59172 10 1) ;; 教育部科研资助项目 ;; 福建省自然科学基金资助项目!(F950