Development of Temperature sensitive Silicon Diodes

Abstract

由硅材料电阻率的选择、结面积设计的不同,试制几种温敏二极管,在恒定电流下,测量室温至120℃温度范围内正向电压Vf与温度T的关系,测试结果表明,Vf-T特性曲线线性优良,在恒定电流为50μA下,灵敏度最高的可达2.70MV/℃.根据测试结果,对提高灵敏度等特性进行一些讨论.Several types of temperature sensitive silicon diodes have been produced on trial by the diFFerent selection of the silicon material resistivity and the diFFerent design of the PN junction area.The relationship between the Forward voltage V F and temperature T has been measured From room temperature to 120℃ under a constant current.The results indicate that the V F T characteristic presents an excellent linearity, and the maximum sensitivity comes up to 2.70 mV/℃ under 50 μA constant Forward current.The discussions about increasing the sensitivity and some other characteristics have been done according to the measurement results.福建省科技资

    Similar works