新疆塔里木盆地北部石油天然气性质及成因类型研究

该成果应用有机地化测试技术手段，从物理性质、化学组成、烃类结构等方面全面系统地研究了塔北不同地区、不同层位的油气性质，在不同类型原油、天然气性质的相似性、差异性及物理、化学变化特点等方面进行了深入研究。结合区内沉积、构造等资料，从油气的生成、演化、运移、聚集、保存条件等方面研究了成因类型，并在油气性质与成因关系研究的基础上，指出了塔北不同地区油气成因类型的差异和分布特点，以及“拓宽海相油气领域、重视陆相油气资源、立足能源勘探、重视无机矿产”的勘探部署建议

单靶磁控溅射法制备Cu2ZnSnS4薄膜及其异质结光电探测器

采用单靶磁控溅射法制备了铜锌锡硫(CZTS)薄膜,利用X射线衍射仪(XRD)、拉曼光谱(Raman)、紫外-可见-近红外分光光度计(UV-Vis-NIR)和扫描电镜(SEM)分别对CZTS薄膜的物相结构、光学性能以及表面形貌进行表征,结果表明,退火后的CZTS薄膜具有单一相的锌黄锡矿结构、适合的禁带宽度(1.51eV)以及平整致密的表面形貌。通过制备CZTS/n-Si异质结光电探测器,光电性能测试显示,器件在450,635和980nm波长的光源下均具有良好的光伏效应。在0V偏压,功率密度为3mW/cm~2的980nm光源照射条件下,器件的响应的上升时间(τr)和下降时间(τd)分别为τr=41ms,τd=126ms,电流开关比为434.9。CZTS/n-Si异质结结构有利于提高载流子的分离效率,比纯n-Si探测器与纯CZTS探测器具有更大的电流开关比,为低成本、高性能及环境友好光电探测器提供新方案

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer

This paper investigates the performance of AlGaN/gallium nitride (GaN) MIS high electron mobility transistors (MIS-HEMTs). The gate dielectric layer and the surface passivation layer are formed by the low-pressure chemical vapor deposition (LPCVD) Si3N4. The LPCVD-Si3N4 MIS-HEMTs exhibit a high breakdown voltage (BV) of 1162 V at I-DS = 1 mu A/mm, a low OFF-state leakage of 7.7 x 10(-12) A/mm, and an excellent ON/OFF-current ratio of similar to 10(11). Compared with the static ON-resistance of 2.88 m Omega . cm(2), the dynamic ON-resistance after high OFF-state drain bias stress at 600 V only increases to 4.89 m Omega . cm(2). The power device figure of merit = BV2/R-ON.sp is calculated to be 469 MW . cm(-2). The LPCVD-Si3N4/GaN interface state density is in the range of (1.4-5.3) x 10(13) eV(-1) cm(-2) extracted by the conventional conductance method. Finally, the gate insulator degradation of GaN-based MIS-HEMTs is analyzed by time-dependent dielectric breakdown test. The lifetime is extrapolated to 0.01% of failures after ten years at 300 K by fitting the data with a power law to a gate voltage of 10.1 V

Fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

We characterized an ionic liquid (1-butyl-3-methylimidazolium nitrate, C8H15N3O3) as a photo-electrochemical etchant for fabricating normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Using the ionic liquid, we achieved an etching rate of similar to 2.9 nm/min, which is sufficiently low to facilitate good etching control. The normally-off AlGaN/GaN MIS-HEMT was fabricated with an etching time of 6 min, with the 20 nm low-pressure chemical vapor deposition (LPCVD) silicon nitride (Si3N4) gate dielectric exhibiting a threshold voltage shift from -10 to 1.2 V, a maximum drain current of more than 426 mA/mm, and a breakdown voltage of 582V. (C) 2016 The Japan Society of Applied Physic

JUNO Sensitivity on Proton Decay p→νˉK+p\to \bar\nu K^+ Searches

The Jiangmen Underground Neutrino Observatory (JUNO) is a large liquid scintillator detector designed to explore many topics in fundamental physics. In this paper, the potential on searching for proton decay in $p\to \bar\nu K^+$ mode with JUNO is investigated.The kaon and its decay particles feature a clear three-fold coincidence signature that results in a high efficiency for identification. Moreover, the excellent energy resolution of JUNO permits to suppress the sizable background caused by other delayed signals. Based on these advantages, the detection efficiency for the proton decay via $p\to \bar\nu K^+$ is 36.9% with a background level of 0.2 events after 10 years of data taking. The estimated sensitivity based on 200 kton-years exposure is $9.6 \times 10^{33}$ years, competitive with the current best limits on the proton lifetime in this channel

JUNO sensitivity on proton decay p → ν K + searches*

The Jiangmen Underground Neutrino Observatory (JUNO) is a large liquid scintillator detector designed to explore many topics in fundamental physics. In this study, the potential of searching for proton decay in the $p\to \bar{\nu} K^+$ mode with JUNO is investigated. The kaon and its decay particles feature a clear three-fold coincidence signature that results in a high efficiency for identification. Moreover, the excellent energy resolution of JUNO permits suppression of the sizable background caused by other delayed signals. Based on these advantages, the detection efficiency for the proton decay via $p\to \bar{\nu} K^+$ is 36.9% ± 4.9% with a background level of $0.2\pm 0.05({\rm syst})\pm$$0.2({\rm stat})$ events after 10 years of data collection. The estimated sensitivity based on 200 kton-years of exposure is $9.6 \times 10^{33}$ years, which is competitive with the current best limits on the proton lifetime in this channel and complements the use of different detection technologies