The Development of a New Type of Medical Rehabilitation Brace for Lower Limbs

本文阐述了一种新型医用下肢康复支具的研制过程。该装置主要由承重装置、负重装置、负重调节装置以及压力检测装置等结构组成,具有调节、设定以及控制负重载荷等功能,可使行内固定术后的下肢骨折患者早期进行负重、行走功能锻炼,促进其骨折愈合及肢体功能康复,减少术后并发症,具有一定的实用价值。The paper expounded the development of a new type of medical rehabilitation brace for lower limbs. The device was mainly composed of different structures including the hip weight-bearing device, the foot weight-bearing device, the weight-bearing adjustment device and the pressure detection device. The brace was designed to allow patients to carry out weight-bearing exercises and walking exercises in early postoperative period after receiving internal fixation of lower limb fracture. It could also promote fracture healing and functional recovery of lower limbs and reduce postoperative complications, which is of certain clinical value

空气环境下退火温度对连续SiC自由膜结构与发光特性的影响

采用熔融纺膜与先驱体转化法相结合制备出连续SiC自由薄膜,研究薄膜在1300,1400,1500℃温度下空气退火处理的氧化行为,以及退火温度对薄膜微观结构、光致发光特性(PL)、硬度和电阻率的影响。结果表明,SiC薄膜在1300℃具有较佳的抗氧化和发光特性,随着退火温度的升高,薄膜的抗氧化和发光特性略有降低,薄膜中无定型SiOxCy减少,-βSiC晶粒长大及游离碳增多,薄膜表面硬度与电阻率下降,表面惰性致密氧化层的生成保护阻挡氧扩散,从而有效减缓薄膜进一步被氧化

先驱体法制备连续SiC自由薄膜及其发光性能

以聚碳硅烷(polycarbosilane,PCS)为先驱体,熔融纺出连续PCS自由原膜,并在190℃下对其进行1,2,3h和6h氧化交联,在900℃预烧及最终分别在1200℃和1300℃烧成,制得系列SiC自由薄膜。采用红外光谱、Raman光谱、X射线衍射、透射电镜与扫描电镜对薄膜进行微观结构与形貌分析。测量了薄膜的室温光致发光特性。结果表明:连续SiC自由膜均匀致密,含有β-SiC微晶、无定形SiOxCy及C簇;薄膜在410～450nm范围内有较强的蓝光发射,1200℃烧结的薄膜随交联时间增加,发光强度增大;而1300℃烧结的薄膜的发光强度相对下降,且交联时间越长强度下降越明显。412nm发光峰可归结于C簇发光;而435nm附近的峰则是薄膜中富含的Si—O,Si—C等键中的缺陷态构成的发光中心,在β-SiC晶粒中电子受到激发与缺陷态产生辐射复合引起发光以及量子表面效应共同作用的结果

Discipline-Based Biological Curriculum Design and Practice

本文针对大学生对生物科学专业缺乏兴趣,专业认同感不高以及传统专业课程教学体系难以激发学习兴趣等问题,总结了我院近些年针对这些问题展开的对生物科学专业课程体系建设进行的探索。我们以遵循人才培养规律作为教学改革与实践的指导思想,优化本科生专业课程体系设置,旨在从激发专业兴趣与认同感出发,着力培养基础知识扎实、动手能力强、具有批判性思维和国际视野的创新性人才

连续含铝SiC自由膜的制备与发光特性研究

通过自制喷膜装置对聚铝碳硅烷(PACS)进行脱泡处理、熔融纺膜,并对其进行氧化交联、高温预烧及高温裂解终烧可制得连续含铝SiC自由薄膜。用扫描电镜(SEM)分析薄膜的形貌,通过红外光谱(FT-IR)分析氧化交联后薄膜的结构变化,通过电子探针(EPMA)、拉曼光谱(Raman)、X射线衍射(XRD)与场发射高分辨透射电子显微镜(HRTEM)对薄膜进行成分及微观结构分析,采用光致发光谱(PL)对薄膜的光学带隙和发光特性进行了研究。结果表明,熔融纺膜法与PACS先驱体法相结合可制得均匀、致密的耐高温连续含铝SiC自由薄膜,室温下表现出了320~440nm宽谱带发光,其发光峰可分别归因于-αSiC和C簇,且随着烧结温度的提高,发光强度增大

Optimization of Hydrometallurgical Purification for SiO_2 in the Process of Preparing Solar-grade Silicon

考察了Hf质量分数、H2C2O4质量分数、HnO3质量分数、酸浸时间、粒径、液体质量与固体质量的比值(简称液固比,下同)等因素对混酸法提纯SIO2工艺过程的影响,利用电感耦合等离子体发射光谱仪(ICP-OES)、场发射扫描电子显微镜(SEM)进行表征。结果表明,最佳工艺条件为:W(Hf)=2%、W(H2C2O4)=3%、W(HnO3)=30%、酸浸时间4 H、粒径100~120目、液固比4∶1、酸浸温度30℃。fE、Al、CA、P杂质的去除率分别达到99.99%、14.02%、73.27%、60.00%,经混酸法处理后SIO2中杂质总量的质量分数降至1.465x10-4。As a pre-treatment unit for preparing solar-grade silicon,hydrometallurgical route could remove most metallic impurities in silicon dioxide(SiO2) and raise the yield of the final product.Acid leaching of SiO2 could reduce the cost and energy consumption of industrialized development.Combined with high purity of reducing agent,the successor process of pyrometallurgy can also achieve "continuous casting".Factors such as the mass fraction of leaching agent,time,the particle size of SiO2,and the liquid-solid ratio were investigated,and the samples were characterized by means of ICP-OES,SEM,etc.The optimal reaction conditions were as follows:w(HF)=2%,w(H2C2O4)=3%,w(HNO3)=30%,reaction time 4 h,the average size of SiO2 powder particle 100～120 mesh,the liquid-solid ratio 4∶1,and room temperature 30 ℃.It was found that the final removal rates of impurities of Fe,Al,Ca,P could reach 99.99%,14.02%,73.27%,and 60.00% respectively and the mass fraction of total amount of impurities could be reduced to 1.465×10-4